Abstract:GaN-based micro-light-emitting diodes (micro-LEDs) are critical for lighting and display applications due to their high efficiency and stability. However, it has been a challenge to alleviate the reduction of the external quantum effect (EQE) of micro-LEDs with a decreasing size. This is attributed to an increase in the Shockley-Read-Hall (SRH) nonradiative recombination rate of the sidewall. Due to the size effects, it is more difficult to prepare efficient micro-LEDs with decreasing mesa size. In this work, micro-LED epi-wafers with InGaN quantum dots (QDs) as active layer materials were grown by plasma-assisted molecular beam epitaxy (PA-MBE), and full-M-sided hexagonal structure micro-LEDs were prepared. We fabricated the micro-LED array with the full-M-sided hexagonal structure and repaired etching damage on the sidewall by chemically treating with a tetramethylammonium hydroxide (TMAH) solution. Most of the surface defects caused by etching were eliminated, and the etching damage can be further reduced by using QDs as an active region. Thus, the efficiency of the micro-LED at a low injection current density is improved, and the size effect is eventually overcome. Compared with the 20 mu m micro-LED array, the peak EQE of the 10 mu m micro-LED array was improved by 79%, reaching 0.83% at 11 A/cm(2). We demonstrate that constructing full-M-sided structures can overcome the size effect in InGaN QD-based micro-LEDs. Notably, the cyan-green micro-LEDs fabricated by this method exhibited low efficiency drop. In addition, the QD-based micro-LED exhibits excellent wavelength stability with increasing injection current density. This work provides a new way to fabricate high-efficiency micro-LEDs.

Fabrication of High Efficiency Green InGaN/GaN MicroLEDs by Modulating Potential Barrier Height of the Sidewall MQWs in V-Pits

P‐10.7: Investigation of Fabrication Technologies of GaN‐based Micro‐LED Devices

Ultra-small InGaN Green Micro-Light-emitting Diodes Fabricated by Selective Passivation of P-Gan

Improvement in Quantum Efficiency of Green GaN-based Micro-Led by Trapezoidal Quantum Well

InGaN-based green micro-LED efficiency enhancement by hydrogen passivation of the p-GaN sidewall

Investigation on the Optical Properties of Micro-LEDs Based on InGaN Quantum Dots Grown by Molecular Beam Epitaxy

Investigation of Modulation Bandwidth of InGaN Green Micro-LEDs by Varying Quantum Barrier Thickness

Green InGaN Quantum Dots Breaking Through Efficiency and Bandwidth Bottlenecks of Micro‐LEDs

High-Efficiency Vertical-Chip Micro-Light-Emitting Diodes via p-GaN Optimization and Surface Passivation

Elimination of Size Effects in InGaN Quantum Dot Cyan-Green Micro-LEDs by Constructing a Full-m-Plane Hexagonal Structure

Comparative Analysis of Microstructure, Electrical and Optical Performance in Sidewall Etching Process for GaN-Based Green Micro-LED

External Quantum Efficiency Enhancement of InGaN-Based Quantum Dot Green Micro-Light-Emitting Diode Arrays by Fabricating Full-A-Sided Triangular Mesa

Graphene/p-AlGaN/p-GaN Electron Tunnelling Light Emitting Diodes with High External Quantum Efficiency

Green InGaN/GaN Multiple-Quantum-Wells with Pre-layer for High-efficiency mini-LEDs

High efficiency InGaN nanowire tunnel junction green micro-LEDs

InGaN multiple quantum well based light-emitting diodes with indium composition gradient InGaN quantum barriers

Optimizing InGaN Micro-LED Efficiency: Investigating the Internal Quantum Efficiency and Ideality Factor Connection

Efficiency enhancement mechanism of piezoelectric effect in long-wavelength InGaN-based LED

Performance Improvement of InGaN Red Light‐Emitting Diode by Using V‐Pits Layer and Step‐Graded GaN Barrier

Optimized InGaN/GaN Quantum Structure for High-Efficiency Micro-LEDs Displays With Low Current Injection

Monolithic integration of GaN-based green micro-LED and quasi-vertical MOSFET utilizing a hybrid tunnel junction