Abstract:Aluminium gallium nitride (AlGaN)-based deep ultraviolet (DUV) light-emitting diodes (LEDs) suffer from low internal quantum efficiency (IQE) and serious efficiency droop. One reason for this is the electron leakage and poor hole injection related to the band alignment of the heterojunctions, doping, polarization effect, and others. In the past, the AlGaN/AlGaN superlattice (SL) electron blocking layer (EBL) was proposed to optimize carrier transport and improve LED performance. However, the SL-EBL design is a trade-off of multiple physics mechanisms, and the LED efficiency deteriorates when the design is improper. We used the extreme gradient boosting (XGBoost) and light gradient boosting machine (LightGBM) stacked machine learning (ML) model to predict various high-performance SL-EBLs considering different compositions, thicknesses, and band offset ratios. Based on the ML model, we propose an easier and experimentally achievable low Al-content SL-EBL (1 nm/5 nm Al0.7Ga0.3N/Al0.58Ga0.42N) that can significantly optimize carrier transport. The improvement in IQE and wall-plug efficiency could be as high as about 70% compared with the conventional bulk EBL. Moreover, we analyze the prediction data and reveal the influence of the composition and thickness on the IQE improvement. The composition difference should be enlarged under a higher band offset ratio, which may be explained by the electron potential and polarization modulation. The critical thickness of the optimized SL-EBL is investigated to guarantee effective electron blocking without destroying material quality, doping modulation, and operating voltage. This work provides a systematic study of SL-EBLs and helps promote the development and application of SL-EBLs for high-efficiency DUV LEDs.

Effects of the P-Alingan/gan Superlattices' Structure on the Performance of Blue LEDs

Improvement of Blue Llight-Ight-ight-eeemitting Mitting Ddiodes Iodes with an Undoped Graded Layer As the Electrons Tunneling Barrier Layer

Effects of P-Algan Ebl Thickness on the Performance of Ingan Green Leds with Large V-Pits

Achieving High-Performance Blue GaN-Based Light-Emitting Diodes by Energy Band Modification on Al x In y Ga 1– x – y N Electron Blocking Layer

Performance Improvement of InGaN LEDs by Using Strain Compensated Last Quantum Barrier and Electron Blocking Layer

Enhanced Performance of GaInN LEDs by Abrupt Mg Doped P-Algan Electron Blocking Layer

Numerical Investigation on the Performance Enhancement of InGaN/GaN Light‐Emitting Diodes with a Novel p‐i‐n Electron‐Blocking Layer

Effect of Mg-Preflow for p-AlGaN Electron Blocking Layer on the Electroluminescence of Green LEDs with V-Shaped Pits

Effects of Mg-doped AlN/AlGaN superlattices on properties of p-GaN contact layer and performance of deep ultraviolet light emitting diodes

Performance Enhancement of Ingan-Based Light-Emitting Diodes with Ingan/Alinn/Ingan Composition-Graded Barriers

Effect of AlGaN interlayer in bottom quantum barriers on efficiency enhancement of InGaN green light-emitting diodes

Effect of the AlN strain compensation layer on InGaN quantum well red-light-emitting diodes beyond epitaxy

Graphene/p-AlGaN/p-GaN Electron Tunnelling Light Emitting Diodes with High External Quantum Efficiency

Demonstrating the Electron Blocking Effect of AlGaN/GaN Superlattice Cladding Layers in GaN-based Laser Diodes

Influence of AlGaN Electron Blocking Layer on Modulation Bandwidth of GaN-Based Light Emitting Diodes

The Influences of Sputtered AlN Buffer Layer on AlInGaN Based Blue and Near‐ultraviolet Light Emitting Diodes

Performance Improvement of Gan-Based Near-Uv Leds with Ingan/Algan Superlattices Strain Relief Layer and Algan Barrier

Advantage Of Tapered And Graded Algan Electron Blocking Layer In Ingan-Based Blue Laser Diodes

High-performance AlGaN-based deep ultraviolet light-emitting diodes with different types of InAlGaN/AlGaN electron blocking layer

Machine learning study on superlattice electron blocking layer design for AlGaN deep ultraviolet light-emitting diodes using the stacked XGBoost/LightGBM algorithm

Preparation and Increased Optical Properties of Large-Area AlInGaN LEDs with Mesoporous AlGaN-Distributed Bragg Reflectors