Enhanced hole concentration in strain-compensated BAlN/AlGaN superlattice for deep ultraviolet light-emitting diodes

Wen Gu,Yi Lu,Zhiyuan Liu,Che-Hao Liao,Jianchang Yan,Junxi Wang,Jinmin Li,Xiaohang Li
DOI: https://doi.org/10.1016/j.spmi.2021.107128
IF: 3.22
2021-12-01
Superlattices and Microstructures
Abstract:The hole concentration in the strain-compensated B0.14Al0.86N/Al0.5Ga0.5N superlattice (SCSL) is investigated. Compared with the Al0.6Ga0.4N/Al0.5Ga0.5N SL, the effective hole concentration in the SCSL could be improved from 1.1 ​× ​1017 ​cm−3 to 8.7 ​× ​1018 ​cm−3 due to the remarkably enlarged valence band bending from 53 ​meV to 533 ​meV. We then propose the ultraviolet light-emitting diode (UV LED) structure emitting at 284 ​nm with the SCSL p-region. Compared with the bulk p-region structure, the UV LED with the SCSL p-region shows improved output characteristics due to the reduced electron leakage and improved hole injection ability. The internal quantum efficiency (IQE) and droop ratio of the SCSL LED structure increases from 49.5% to 54.1% and decreases from 36.8% to 13.6%, respectively. Moreover, the light output powers of the Al0.6Ga0.4N/Al0.5Ga0.5N SL structure and SCSL structure have been improved by 16.3% and 49.1% over the bulk p-region counterpart. Our results indicate that the SCSL structure can be a promising candidate for the high-performance UV LED.
physics, condensed matter
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