Abstract:Electron leakage from the active region to the p-type region restricts the performance of GaN-based Vertical-Cavity Surface-Emitting Lasers (VCSELs). AlGaN EBL can decrease the leakage current, but also raises the hole injection barrier and reduce the hole injection efficiency. Then, it is important to design EBL structures that can enhance both electron blocking and hole injection. In this study, VCSEL devices with three different EBL, basic structure Al0.6Ga0.4N EBL labeled as Device A, newly proposed 16 nm thick Al0.75-0.80Ga0.25-0.20N EBL labeled as Device B, and 18 nm thick Al0.75-0.80Ga0.25-0.20N EBL labeled as Device C, respectively, are designed and analyzed using PICS 3D simulation. Device A represents a basic VCSEL structure, while Device C incorporates a graded electron-blocking layer (EBL) with adjusted thickness. Through simulation results, it is observed that the introduction of a graded EBL in Device C leads to significant performance enhancements compared to the basic structure of Device A. Specifically, the graded EBL effectively reduces band bending and increases the electron barrier height, thereby improving carrier confinement and reducing electron leakage. Additionally, the utilize of a Graded structure in Device C aids in strain relief at the layout between the QB and EBL, resulting in improved electron-blocking capability and potentially enhanced hole transport characteristics. These findings underscore the importance of EBL grading in optimizing the performance of VCSELs, highlighting its potential for advancing the efficiency and functionality of these semiconductor devices. Power of the device C is being improved upto 4.16%, similarly the conduction band barrier height is improved upto 26.6% which is beneficial for better VCSEL performance as it enhances electron confinement in the active region, leading to increased efficiency and reduced carrier leakage and valance band barrier height decreases upto 6.52% and threshold current is decreased upto 4.8%.

Demonstrating the Electron Blocking Effect of AlGaN/GaN Superlattice Cladding Layers in GaN-based Laser Diodes

Effect of Asymmetric InAlGaN/GaN Superlattice Barrier Structure on the Optoelectronic Performance of GaN-Based Green Laser Diode

Compositional Degradation of the Electron Blocking Layers Through Solid-Solution in GaN-based Laser Diodes

AlGaN-Based Deep-Ultraviolet Laser Diodes with Novel Superlattice Electron-Blocking Layers

Improvement of Hole Injection and Electron Overflow by a Tapered AlGaN Electron Blocking Layer in InGaN-based Blue Laser Diodes

Advantage Of Tapered And Graded Algan Electron Blocking Layer In Ingan-Based Blue Laser Diodes

AlGaN-Based Deep UV Laser Diodes without an Electron Blocking Layer and with a Reduced Aluminum Composition of Quantum Barriers

Enhanced performance in deep-ultraviolet laser diodes with an undoped BGaN electron blocking layer.

Research on AlInGaN quaternary alloys as MQW barriers in GaN-based laser diodes

Effect of AlN interlayer thickness on leakage currents in Schottky contacts to Alo.25Gao.75N/AlN/GaN heterostructures

Analytical Models of Electron Leakage Currents in Gallium Nitride-Based Laser Diodes and Light-Emitting Diodes

Optimization of p-cladding layer utilizing polarization doping for Blue-Violet InGaN laser diodes

Study of the Leakage Current Mechanism in Schottky Contacts to Al0.25Ga0.75N/GaN Heterostructures with AlN Interlayers

Effects of the P-Alingan/gan Superlattices' Structure on the Performance of Blue LEDs

Optimization of the Electron Blocking Layer in GaN Laser Diodes

Performance Improvement of InGaN LEDs by Using Strain Compensated Last Quantum Barrier and Electron Blocking Layer

Optimization of AlGaN-Based Deep Ultraviolet Laser Diodes with Graded Rectangular Superlattice Electron Blocking Layer and Graded Trapezoidal Superlattice Hole Blocking Layer

Advantages of InGaN–GaN–InGaN Delta Barriers for InGaN-Based Laser Diodes

Enhanced Performance of GaN based VCSELs through Graded Electron-Blocking Layer Design

Numerical Investigation on the Performance Enhancement of InGaN/GaN Light‐Emitting Diodes with a Novel p‐i‐n Electron‐Blocking Layer

Current spreading structure of GaN-based vertical-cavity surface-emitting lasers