Abstract:Measurement of carrier lifetime is very important to understand the physics in light-emitting diodes (LEDs), as it builds a link between carrier concentration and excitation power or current density. In this paper, we present our study on optical and electrical characterizations on carrier lifetimes in polar InGaN-based LEDs. First, a carrier rate equation model is proposed to explain the non-exponential nature of time-resolved photoluminescence (TRPL) decay curves, wherein exciton recombination is replaced by bimolecular recombination, considering the influence of polarization field on electron-hole pairs. Then, nonradiative recombination and radiative recombination coefficients can be deduced from fitting and used to calculate the radiative recombination efficiency. By comparing with the temperature-dependent photoluminescence (TDPL) and power-dependent photoluminescence (PDPL), it is found these three methods provide the consistent results. Second, differential carrier lifetimes depending on injection current are measured in commercial near-ultraviolet (NUV), blue and green LEDs. It is found that carrier lifetime is longer in green one and shorter in NUV one, which is attributed to the influence of polarization-induced quantum confined Stark effect (QCSE). This result implies the carrier density is higher in green LED while lower NUV LED, even the injection current is the same. By ignoring Auger recombination and fitting the efficiency-current and carrier lifetime-current curves simultaneously, the dependence of injection efficiency on carrier concentration in different LED samples are plotted. The NUV LED, which has the shallowest InGaN quantum well, actually exhibits the most serious efficiency droop versus carrier concentration. Then, the approaches to overcome the efficiency droop are discussed.

Carrier dynamics of high-efficiency green light emission in graded-indium-content InGaN/GaN quantum wells: An important role of effective carrier transfer

Carrier recombination dynamics in green InGaN-LEDs with quantum-dot-like structures

Understanding the Luminescence Characteristics of Ultraviolet InGaN/AlGaN Multiple Quantum Wells with Different in Gradients

A Simulation Study of Carrier Capture Ability of the Last InGaN Quantum Well with Different Indium Content for Yellow-Light-Emitting InGaN/GaN Multiple Quantum Wells

Effects of Photogenerated Carriers in GaN Layers on the Photoluminescence Characteristics of Violet Light-Emitting InGaN/GaN Multiple Quantum Wells

Strong Localization Effect and Carrier Relaxation Dynamics in Self-Assembled InGaN Quantum Dots Emitting in the Green

Photoluminescence Properties of Blue and Green Multiple InGaN/GaN Quantum Wells

Thermally Activated Carriers Transfer Process For The Success Of Ingan/Gan Multi-Quantum Well Light Emitting Devices

Carrier Dynamics Determined by Carrier-Phonon Coupling in InGaN/GaN Multiple Quantum Well Blue Light Emitting Diodes

Investigation of the Light Emission Properties and Carrier Dynamics in Dual-Wavelength InGaN/GaN Multiple-Quantum Well Light Emitting Diodes

Anomalous Temperature Dependence of Photoluminescence Caused by Non-Equilibrium Distributed Carriers in InGaN/(In)GaN Multiple Quantum Wells

Field Dependent Ultrafast Carrier Dynamics in InGaN/GaN P-I (Mqw)-N Structure

Photoluminescence of Green InGaN/GaN MQWs Grown on Pre-Wells*

Study on Carrier Transportation in InGaN Based Green LEDs with V-pits Structure in the Active Region

The Investigation on Carrier Distribution in InGaN/GaN Multiple Quantum Well Layers

Carrier Localization Effects in InGaN/GaN Multiple-Quantum-Wells LED Nanowires: Luminescence Quantum Efficiency Improvement and "negative" Thermal Activation Energy.

Consistency on Two Kinds of Localized Centers Examined from Temperature-Dependent and Time-Resolved Photoluminescence in InGaN/GaN Multiple Quantum Wells

Optical Properties and Carrier Dynamics in Asymmetric Coupled Ingan Multiple Quantum Wells

Temperature Dependence of Photoluminescence Spectra for Green Light Emission from InGaN/GaN Multiple Wells.

Carrier Lifetimes in Polar InGaN-based LEDs

Investigation of Optical Properties of InGaN–InN–InGaN/GaN Quantum-Well in the Green Spectral Regime