Abstract:We investigate the impact of threading dislocations with an edge component (a or a+c-type) on carrier recombination and diffusion in GaN(0001) layers close to the surface as well as in the bulk. To this end, we utilize cathodoluminescence imaging of the top surface of a GaN(0001) layer with a deeply buried (In,Ga)N quantum well. Varying the acceleration voltage of the primary electrons and comparing the signal from the layer and the quantum well enables us to probe carrier recombination at depths ranging from the close vicinity of the surface to the position of the quantum well. Our experiments are accompanied by fully three-dimensional Monte Carlo simulations of carrier drift, diffusion, and recombination in the presence of the surface, the quantum well, and the dislocation, taking into account the dislocation strain field and the resulting piezoelectric field at the dislocation outcrop. Near the surface, this field establishes an exciton dead zone around the dislocation, the extent of which is not related to the carrier diffusion length. However, reliable values of the carrier diffusion length can be extracted from the dipole-like energy shift observed in hyperspectral cathodoluminescence maps recorded around the dislocation outcrop at low acceleration voltages. For high acceleration voltages, allowing us to probe a depth where carrier recombination is unaffected by surface effects, we observe a much stronger contrast than expected from the piezoelectric field alone. This finding provides unambiguous experimental evidence for the strong nonradiative activity of edge threading dislocations in bulk GaN and hence also in buried heterostructures.

Defect Recombination Induced by Density-Activated Carrier Diffusion in Nonpolar InGaN Quantum Wells

Recombination efficiency in c-plane (In,Ga)N/GaN quantum wells: Saturation of localisation sites versus Auger-Meitner recombination

Carrier recombination dynamics in green InGaN-LEDs with quantum-dot-like structures

Carrier diffusion in long wavelength InGaN quantum well LEDs after injection through V-defects

Carrier-induced transient defect mechanism for non-radiative recombination in InGaN light-emitting devices

Quantum efficiency of III-Nitride emitters: evidence for defect-assisted non-radiative recombination and its effect on the green gap

On Resonant Optical Excitation and Carrier Escape in GaInN/GaN Quantum Wells

Reducing the efficiency droop by lateral carrier confinement in InGaN/GaN quantum-well nanorods

Thermally Activated Carrier Transfer Processes in InGaN∕GaN Multi-Quantum-well Light-Emitting Devices

Cathodoluminescence as an Effective Probe of Carrier Transport and Deep Level Defects in Droop-Mitigating InGaN/GaN Quantum Well Heterostructures

Characterisation of Defects at Non-Polar GaN/InGaN Junctions in Novel Materials for Application in Light Emitting Diodes

Gaussian impurity bands in GaN and weakening of carrier confinement in InGaN/GaN quantum wells

Thermally Activated Carriers Transfer Process For The Success Of Ingan/Gan Multi-Quantum Well Light Emitting Devices

Increased light-emission efficiency in disordered InGaN through the correlated reduction of recombination rates

Dynamics of carrier injection through V-defects in long wavelength GaN LEDs

Lateral Carrier Confinement in InGaN Quantum-Well Nanorods

Carrier dynamics of high-efficiency green light emission in graded-indium-content InGaN/GaN quantum wells: An important role of effective carrier transfer

Carrier Recombination Mechanisms and Efficiency Droop in GaInN/GaN Light-Emitting Diodes

Electroluminescence Induced by Photoluminescence Excitation in GaInN/GaN Light-Emitting Diodes

Carrier diffusion in GaN -- a cathodoluminescence study. III: Nature of nonradiative recombination at threading dislocations

Direct Observation and Theoretical Interpretation of Strongly Enhanced Lateral Diffusion of Photogenerated Carriers in InGaN∕GaN Quantum Well Structures