Abstract:The optical properties of two kinds of InGaN∕GaN quantum-wells light emitting diodes, one of which was doped with Si in barriers while the other was not, are comparatively investigated using time-integrated photoluminescence and time-resolved photoluminescence techniques. The results clearly demonstrate the coexistence of the band gap renormalization and phase-space filling effect in the structures with Si doped barriers. It is surprisingly found that photogenerated carriers in the intentionally undoped structures decay nonexponentially, whereas carriers in the Si doped ones exhibit a well exponential time evolution. A new model developed by O. Rubel, S. D. Baranovskii, K. Hantke, J. D. Heber, J. Koch, P. Thomas, J. M. Marshall, W. Stolz, and W. H. Rühle [J. Optoelectron. Adv. Mater. 7, 115 (2005)] was used to simulate the decay curves of the photogenerated carriers in both structures, which enables us to determine the localization length of the photogenerated carriers in the structures. It is found that the Si doping in the barriers not only leads to remarkable many-body effects but also significantly affects the carrier recombination dynamics in InGaN∕GaN layered heterostructures.

Direct Observation and Theoretical Interpretation of Strongly Enhanced Lateral Diffusion of Photogenerated Carriers in InGaN∕GaN Quantum Well Structures

Anisotropic Ambipolar Diffusion of Carriers in InGaN/GaN Quantum Wells

Photoluminescence of InGaN/AlGaN Strained Multiple Quantum Wells Influenced by Dry Etching

Lateral Carrier Confinement in InGaN Quantum-Well Nanorods

Band Gap Renormalization and Carrier Localization Effects in InGaN∕GaN Quantum-Wells Light Emitting Diodes with Si Doped Barriers

Carrier diffusion in long wavelength InGaN quantum well LEDs after injection through V-defects

Resolving Exciton Diffusion in Ingaas Quantum Wells Using Micro-Photoluminescence Mapping with A Lateral Excitation

Defect Recombination Induced by Density-Activated Carrier Diffusion in Nonpolar InGaN Quantum Wells

Non-exponential Photoluminescence Decay Dynamics of Localized Carriers in Disordered InGaN/GaN Quantum Wells: the Role of Localization Length

Carrier Dynamics Of Inxga1-Xn Quantum Disks Embedded In Gan Nanocolumns

On Resonant Optical Excitation and Carrier Escape in GaInN/GaN Quantum Wells

Electroluminescence Induced by Photoluminescence Excitation in GaInN/GaN Light-Emitting Diodes

Direct Imaging of the Spatial Diffusion of Excitons in Single Semiconductor Nanowires

Influence of localized surface plasmons on carrier dynamics in InGaN/GaN quantum wells covered with Ag nanoparticles for enhanced photoluminescence

The Investigation on Carrier Distribution in InGaN/GaN Multiple Quantum Well Layers

Dynamics of Photoexcited Carriers in AlxGa1−xN/GaN Double Heterostructures

Investigation of Optical Properties of InGaN–InN–InGaN/GaN Quantum-Well in the Green Spectral Regime

Investigation of quantum-confinement effect and Stokes shift in strained Ga1−xInxN/GaN double quantum wells by spectroscopic ellipsometry and photoluminescence

Lateral ambipolar drift of the excess charge carriers in the GaAs-based heterostructures with quantum wells and impurity δ-layers in the adjacent barriers

Effect of Localization States on the Electroluminescence Spectral Width of Blue–green Light Emitting InGaN/GaN Multiple Quantum Wells

Effects of piezoelectricity and spontaneous polarization on localized excitons in self-formed InGaN quantum dots