Abstract:In this work, by conducting selective electrochemical (EC) etching of the sapphire based nitrides epitaxial film, freestanding InGaN/GaN quantum-wells (QWs) membrane was firstly and specifically prepared. InGaN/GaN QWs based device with vertical geometry were then fabricated using the membranes, which can work either as a light-emitting diode (LED) or as a photodetector (PD). The emission intensity and polarization characteristics of vertical devices are optimized by introducing the Piezo-phototronic effect under external straining. Under a tensile strain of 2.04%, the relative electroluminescence (EL) intensity of the LED is increased by 183%, which is ascribed to the enhancement of carriers recombination arisen from the external-strain-induced Piezo-phototronic effect. And the polarization ratio of the emission light is increased or decreased by 135% and 56% under the tensile or compressive strain of 2.04%. For the PD working mode, the polarization ratio of photoresponse current is increased by 107% under the condition of 2.04% tensile strain, while it is reduced by 81% under compressive strain. The modulated polarization characteristics in the vertical devices were attributed to the adjustment in anisotropic optoelectronic properties of InGaN/GaN QWs. This work provides a novel method to fabricate vertical nitride optoelectronics and also presents a unique strategy to their optoelectronic performances.

Linear Electro-Optic Effect Due to the Built-in Electric Field in InGaN/GaN Quantum Wells

Built-in Electric Field Effect on the Linear and Nonlinear Intersubband Optical Absorptions in InGaN Strained Single Quantum Wells

Linear and Nonlinear Intersubband Optical Absorptions and Refractive Index Changes in InGaN Strained Single Quantum Wells： Strong Built-in Electric Field Effects

Electro-Optic Effect in A Semi-Parabolic Quantum Well with an Applied Electric Field

NONLINEAR OPTICAL RECTIFICATION OF A COUPLING WURTZITE GaN-BASED QUANTUM WELL WITH BUILT-IN ELECTRIC FIELDS

Nonlinear Refractive Index Change And Optical Rectification In A Gan-Based Step Quantum Wells With Strong Built-In Electric Field

Gain Characteristics of InGaN-GaN Quantum Wells

Linear and nonlinear optical absorption coefficients in InGaN/GaN quantum wells: Interplay between intense laser field and higher-order anharmonic potentials

Electric Field Effect on the Linear and Nonlinear Intersubband Refractive Index Changes in Asymmetrical Semiparabolic and Symmetrical Parabolic Quantum Wells

Linear and Nonlinear Intersubband Refractive Index Changes in Wurtzite Algan/Gan Double Quantum Wells: Effects of Piezoelectricity and Spontaneous Polarization

Influence of Polarization Induced Electric Fields on the Wavelength and the Refractive Index of Intersubband Transitions in AlN/GaN Coupled Double Quantum Wells

Effects of piezoelectricity and spontaneous polarization on localized excitons in self-formed InGaN quantum dots

The Optical Kerr Effect in Wurtzite Gan-Based Double Quantum Wells: Influences of Piezoelectricity and Spontaneous Polarization

Influence of Applied Electric Field on the Absorption Coefficient and Subband Distances in Asymmetrical AlN/GaN Coupled Double Quantum Wells

Optimized performances in InGaN/GaN quantum-well membrane based vertical optoelectronics by the Piezo-phototronic effect

Direct Observation and Theoretical Interpretation of Strongly Enhanced Lateral Diffusion of Photogenerated Carriers in InGaN∕GaN Quantum Well Structures

Analysis of Optical Gain Property in the Ingan/Gan Triangular Shaped Quantum Well under the Piezoelectric Field

Effects of Piezoelectricity and Spontaneous Polarization on Electronic and Optical Properties of Wurtzite III–V Nitride Quantum Wells

Second-Order Nonlinear Optical Susceptibilities Induced by Built-In Electric Field in Wurtzite Nitride Double Quantum Wells

Exciton states and optical transitions in InGaN/GaN quantum dot nanowire heterostructures: Strong built-in electric field and dielectric mismatch effects

Interband Transition Physics from the Absorption Edge in GaN: New Prospects from Numerical Analysis