Abstract:We have theoretically studied exciton states and photoluminescence spectra of strained wurtzite AlGaN/GaN quantum-well heterostructures. The electron and hole energy spectra are obtained by numerically solving the Schrödinger equation, both for a single-band Hamiltonian and for a non-symmetrical 6-band Hamiltonian. The deformation potential and spin-orbit interaction are taken into account. For increasing built-in field, generated by the piezoelectric polarization and by the spontaneous polarization, the energy of size quantization rises and the number of size quantized electron and hole levels in a quantum well decreases. The exciton energy spectrum is obtained using electron and hole wave functions and two-dimensional Coulomb wave functions as a basis. We have calculated the exciton oscillator strengths and identified the exciton states active in optical absorption. For different values of the Al content x, a quantitative interpretation, in a good agreement with experiment, is provided for (i) the red shift of the zero-phonon photoluminescence peaks for increasing the quantum-well width, (ii) the relative intensities of the zero-phonon and one-phonon photoluminescence peaks, found within the non-adiabatic approach, and (iii) the values of the photoluminescence decay time as a function of the quantum-well width.

Exciton states and optical transitions in InGaN/GaN quantum dot nanowire heterostructures: Strong built-in electric field and dielectric mismatch effects

Exciton states and interband optical transitions in wurtzite InGaN/GaN quantum dot nanowire heterostructures

Exciton states and interband optical transitions in InGaN quantum dots

Donor Bound Excitons Confined in Wurtzite Ingan/Gan Quantum Dot Nanowire Heterostructures

Exciton States in Wurtzite Ingan Strained Coupled Quantum Dots: Effects of Piezoelectricity and Spontaneous Polarization

Exciton States In Wurtzite Ingan Coupled Quantum Dots

Influence of Pressure on Exciton States and Interband Optical Transitions in Wurtzite Ingan/Gan Coupled Quantum Dot Nanowire Heterostructures with Polarization and Dielectric Mismatch

Effects of piezoelectricity and spontaneous polarization on localized excitons in self-formed InGaN quantum dots

Exciton states and interband optical transitions in wurtzite InGaN/GaN quantum dot nanowire heterostructures: Effects of hydrostatic pressure

Built-In Electric Field Effects on Donor Bound Excitons in Wurtzite Ingan Strained Coupled Quantum Dots

Exciton States in Wurtzite InGaN/GaN Quantum Wells: Strong Built-in Electric Field and Interface Optical-Phonon Effects

Exciton states in strained GaN/AlxGa1-xN quantum dots

Influence of pressure on donor bound exciton states in wurtzite InGaN/GaN quantum dot nanowire heterostructures

Donor bound excitons in wurtzite InGaN quantum dots: Effects of built-in electric fields

Exciton States and Interband Optical Transitions in ZnO/MgZnO Quantum Dots

Excitonic properties of strained wurtzite and zinc-blende GaN/Al(x)Ga(1-x)N quantum dots

Excitons in the wurtzite AlGaN/GaN quantum-well heterostructures

Structure Properties of InN Quantum Dots in GaN Semiconductor

Quantum Size Effect on the Luminous Properties of Excitonic States in a Quasi-One-dimensional Wurtzite GaN Nanowire: Two-parameter Variational Approach

Interfacially Bound Exciton State in a Hybrid Structure of Monolayer WS2 and InGaN Quantum Dots

Built-in Electric Field Effect on the Linear and Nonlinear Intersubband Optical Absorptions in InGaN Strained Single Quantum Wells