Exciton states and interband optical transitions in wurtzite InGaN/GaN quantum dot nanowire heterostructures

Min Zhang,Junjie Shi
DOI: https://doi.org/10.1016/j.spmi.2011.08.015
IF: 3.22
2011-01-01
Superlattices and Microstructures
Abstract:Within the framework of the effective-mass approximation, the exciton states and interband optical transitions in In(x)Ga(1-x)N/GaN strained quantum dot (QD) nanowire heterostructures are investigated using a variational method, in which the important built-in electric field (BEF) effects, dielectric-constant mismatch and three-dimensional confinement of the electron and hole in In(x)Ga(1-x)N QDs are considered. We find that the strong BEF gives rise to an obvious reduction of the effective band gap of QDs and leads to a remarkable electron-hole spatial separation. The BEF, QD height and radius, and dielectric mismatch effects have a significant influence on exciton binding energy, electron interband optical transitions, and the exciton oscillator strength. (C) 2011 Elsevier Ltd. All rights reserved.
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