Abstract:We have theoretically studied exciton states and photoluminescence spectra of strained wurtzite AlGaN/GaN quantum-well heterostructures. The electron and hole energy spectra are obtained by numerically solving the Schrödinger equation, both for a single-band Hamiltonian and for a non-symmetrical 6-band Hamiltonian. The deformation potential and spin-orbit interaction are taken into account. For increasing built-in field, generated by the piezoelectric polarization and by the spontaneous polarization, the energy of size quantization rises and the number of size quantized electron and hole levels in a quantum well decreases. The exciton energy spectrum is obtained using electron and hole wave functions and two-dimensional Coulomb wave functions as a basis. We have calculated the exciton oscillator strengths and identified the exciton states active in optical absorption. For different values of the Al content x, a quantitative interpretation, in a good agreement with experiment, is provided for (i) the red shift of the zero-phonon photoluminescence peaks for increasing the quantum-well width, (ii) the relative intensities of the zero-phonon and one-phonon photoluminescence peaks, found within the non-adiabatic approach, and (iii) the values of the photoluminescence decay time as a function of the quantum-well width.

Donor Bound Excitons Confined in Wurtzite Ingan/Gan Quantum Dot Nanowire Heterostructures

Donor bound excitons in wurtzite InGaN quantum dots: Effects of built-in electric fields

Exciton states and interband optical transitions in wurtzite InGaN/GaN quantum dot nanowire heterostructures

Built-In Electric Field Effects on Donor Bound Excitons in Wurtzite Ingan Strained Coupled Quantum Dots

Exciton states and optical transitions in InGaN/GaN quantum dot nanowire heterostructures: Strong built-in electric field and dielectric mismatch effects

Influence of pressure on donor bound exciton states in wurtzite InGaN/GaN quantum dot nanowire heterostructures

Exciton States in Wurtzite Ingan Strained Coupled Quantum Dots: Effects of Piezoelectricity and Spontaneous Polarization

Exciton states and interband optical transitions in InGaN quantum dots

Exciton States In Wurtzite Ingan Coupled Quantum Dots

Influence of Pressure on Exciton States and Interband Optical Transitions in Wurtzite Ingan/Gan Coupled Quantum Dot Nanowire Heterostructures with Polarization and Dielectric Mismatch

Surface Polaronic Effect on Donor-Impurity States of a Wurtzite Nitride Nanowire: Two-parameter Variational Approach

Exciton states and interband optical transitions in wurtzite InGaN/GaN quantum dot nanowire heterostructures: Effects of hydrostatic pressure

Built-in electric field effect on donor impurities in strained wurtzite GaN/AlGaN asymmetric double quantum wells

Effects of piezoelectricity and spontaneous polarization on localized excitons in self-formed InGaN quantum dots

Exciton states in strained GaN/AlxGa1-xN quantum dots

QUANTUM SIZE EFFECT ON THE BINDING ENERGIES OF GROUND-STATE AND EXCITED-STATE EXCITONS IN A WURTZITE ZnO NANOWIRE

Exciton States in Wurtzite InGaN/GaN Quantum Wells: Strong Built-in Electric Field and Interface Optical-Phonon Effects

Impurity Bound Polaron in Wurtzite Gan/Aln Quantum Wells: the Interface Optical-Phonon and the Built-In Electric Field Effects

Excitons in the wurtzite AlGaN/GaN quantum-well heterostructures

Infrared Magneto-Optical Absorption Of Shallow Donors In Gaas/Gaasal Quantum Dots

Binding Energies of Impurity States in Strained Wurtzite Gan/Alxga1-Xn Heterojunctions with Finitely Thick Potential Barriers