Abstract:Within the framework of the effective-mass approximation, exciton states confined in wurtzite InxGa1−xN∕GaN strained coupled quantum dots (QDs) are investigated by means of a variational approach, including three-dimensional confinement of the electrons and holes in the QDs and strong built-in electric field effects caused by the piezoelectricity and spontaneous polarization. The relationship between exciton states and structural parameters of coupled QDs is studied in detail. We find that the strong built-in electric field in the InxGa1−xN∕GaN strained coupled QDs gives rise to a marked reduction of the effective band gap of InxGa1−xN QDs and leads to a remarkable increasing of the emission wavelengths. Both the sizes and alloy fluctuations of QDs have a significant influence on the exciton states and interband optical transitions in coupled QDs. Moreover, the barrier thickness between the two coupled InxGa1−xN QDs has a considerable influence on the exciton states and optical properties. When the barrier thickness is increased, the exciton binding energy is reduced, the emission wavelength is increased, and the electron-hole recombination rate is obviously reduced. Our theoretical results are in good agreement with the experimental measurements.

Built-In Electric Field Effects on Donor Bound Excitons in Wurtzite Ingan Strained Coupled Quantum Dots

Donor bound excitons in wurtzite InGaN quantum dots: Effects of built-in electric fields

Donor Bound Excitons Confined in Wurtzite Ingan/Gan Quantum Dot Nanowire Heterostructures

Exciton states and optical transitions in InGaN/GaN quantum dot nanowire heterostructures: Strong built-in electric field and dielectric mismatch effects

Exciton states and interband optical transitions in wurtzite InGaN/GaN quantum dot nanowire heterostructures

Exciton States in Wurtzite Ingan Strained Coupled Quantum Dots: Effects of Piezoelectricity and Spontaneous Polarization

Exciton States In Wurtzite Ingan Coupled Quantum Dots

Exciton states and interband optical transitions in InGaN quantum dots

Effects of piezoelectricity and spontaneous polarization on localized excitons in self-formed InGaN quantum dots

Influence of pressure on donor bound exciton states in wurtzite InGaN/GaN quantum dot nanowire heterostructures

Built-in Electric Field Effect on the Linear and Nonlinear Intersubband Optical Absorptions in InGaN Strained Single Quantum Wells

Built-in electric field effect on donor impurities in strained wurtzite GaN/AlGaN asymmetric double quantum wells

Exciton States in Wurtzite InGaN/GaN Quantum Wells: Strong Built-in Electric Field and Interface Optical-Phonon Effects

Exciton states in strained GaN/AlxGa1-xN quantum dots

Influence of Pressure on Exciton States and Interband Optical Transitions in Wurtzite Ingan/Gan Coupled Quantum Dot Nanowire Heterostructures with Polarization and Dielectric Mismatch

Optical Transitions Inpbte∕cdtequantum Dots

On the Competition Between the Kondo Effect and the Exchange Interaction in a Parallel Double Quantum Dot System

Correlated Electron Transport Through Parallel Double-Quantum-dot

Effect of a Tilted Electric Field on the Magnetoexciton Ground State in a Semiconductor Quantum Dot

Electron-Hole Correlations and Optical Excitonic Gaps in Quantum-Dot Quantum Wells: Tight-Binding Approach

Effects of Electric Field on the Electronic Structure and Optical Properties of Quantum Rods with Wurtzite Structure