Abstract:A number of physical processes involving quantum dots depend critically upon the "evanescent" electron eigenstate wave function that extends outside of the material surface into the surrounding region. These processes include electron tunneling through quantum dots, as well as interactions between multiple quantum dot structures. In order to unambiguously determine these evanescent fields, appropriate boundary conditions have been developed to connect the electronic solutions interior to the semiconductor quantum dot to exterior vacuum solutions. In standard envelope function theory, the interior wave function consists of products of band edge and envelope functions, and both must be considered when matching to the external solution. While the envelope functions satisfy tractable equations, the band edge functions are generally not known. In this work, symmetry arguments in the spherically symmetric approximation are used in conjunction with the known qualitative behavior of bonding and antibonding orbitals to catalog the behavior of the band edge functions at the unit cell boundary. This physical approximation allows consolidation of the influence of the band edge functions to two simple surface parameters that are incorporated into the boundary conditions and are straightforwardly computed by using numerical first-principles quantum techniques. These new boundary conditions are employed to analyze an isolated spherically symmetric semiconductor quantum dot in vacuum within the analytical model of Sercel and Vahala [Phys. Rev. Lett. 65, 239 (1990); Phys. Rev. B 42, 3690 (1990)]. Results are obtained for quantum dots made of GaAs and InP, which are compared with ab initio calculations that have appeared in the literature.

Electron-Hole Correlations and Optical Excitonic Gaps in Quantum-Dot Quantum Wells: Tight-Binding Approach

CdS/HgS/CdS Quantum Dot Quantum Wells: A Tight-binding Study

Spatially Separated Excitons in Quantum-Dot Quantum Well Structures

Correlated Electron Transport Through Parallel Double-Quantum-dot

Multiband theory of quantum-dot quantum wells: Dark excitons, bright excitons, and charge separation in heteronanostructures

Excitons in quantum-dot quantum-well nanoparticles

Electronic and Optical Properties of Graphene Quantum Dots: the Role of Many-Body Effects

Dynamics of bound exciton complexes in CdS nanobelts.

Exciton States In Wurtzite Ingan Coupled Quantum Dots

Ground State of Excitons in Quantum-Dot Quantum-Well Nanoparticles: Stochastic Variational Method

Exciton States in Wurtzite Ingan Strained Coupled Quantum Dots: Effects of Piezoelectricity and Spontaneous Polarization

Quantum Dot Properties in the Multiband Envelope-Function Approximation Using Boundary Conditions Based Upon First-Principles Quantum Calculations

Excitons properties in CdSe/Cd xZn 1-xS core/shell quantum dots

Theory of Excitons in Cubic III-V Semiconductor GaAs, InAs and GaN Quantum Dots: Fine Structure and Spin Relaxation

Theory of excitonic complexes in gated WSe$_2$ quantum dots

Exciton spin dynamics in spherical CdS quantum dots

Exciton states and interband optical transitions in wurtzite InGaN/GaN quantum dot nanowire heterostructures

Exciton states and optical transitions in InGaN/GaN quantum dot nanowire heterostructures: Strong built-in electric field and dielectric mismatch effects

Gate-Tuned Spontaneous Exciton Insulator in Double-Quantum Wells

Transport studies of electron-hole and spin-orbit interaction in GaSb/InAsSb core-shell nanowire quantum dots

Quantum Size Effects on Exciton States in Indirect-Gap Quantum Dots