Abstract:This special issue on Advances in Quantum Transport covers important contributions from researchers in the field of electron transport in condensed matter systems. We are in the second generation of quantum revolution where the fundamental aspects of quantum physics in semiconductors can be exploited for technological applications. This has stimulated extensive research activities in solid state quantum devices in search of new schemes which are now more accessible than before due to technological advancement in semiconductor processing as well as in the growth of high quality materials. New quantum features are being investigated in semiconductors in two, one and zero dimensions to unravel existing theoretical predictions as well as finding new effects. In this special issue we have attempted to cover some of the recent advances in quantum transport in low dimensional semiconductors and related fields. Gul et al showed the first observation of fractional quantisation of differential conductance in germanium based quantum wires in one-dimension without any quantising magnetic field. They showed that hole transport in one-dimensional (1D) quantum wires in strained germanium grown by reduced pressure chemical vapour deposition exhibited quantised conductance with plateaus at n 2 e 2 / h , where n is an integer, e is the fundamental unit of charge and h is Planck's constant. At lower carrier concentration of holes, the authors found to their surprise a plateau at 1/4(2 e 2 / h ) reduced to a spin polarised plateau at 1/8(2 e 2 / h ) in the presence of a strong parallel magnetic field. This unexpected result indicates that the system is possibly behaving as if charge was fractionalised with values e /2 and e /4 [ 1 ]. Exploiting 1D quantum wires based on GaAs, Yan et al showed how transverse electron focusing can be used for controlled monitoring of spin polarization within the 1D channel. The authors proved experimentally an existing theoretical proposal of length dependent spin polarisation in 1D quantum wires via transverse electron focusing. The polarized 1D electrons when injected into a 2D region result in a split in the odd-focusing peaks, whereas the even peaks remain single peak in comparison to unpolarised electrons where both odd and even peaks are single peaks; each sub-peak represents the population of a spin state. The authors argue that the spin orbit interactions in the 2D regime is enhanced as a consequence of injection of polarised 1D electrons, therefore, the scheme may open up a new regime of spin-engineering for possible spintronics applications [ 2 ]. Low-dimensional semiconductors with a control on spin degree of freedom are promising for spintronics devices. Motivated by this, Karlsson et al performed simulations of electronic states and effects of lateral spin–orbit coupling (LSOC) in an asymmetrically biased 1D nanowire with Dirac short-range interactions. Karlsson et al found the appearance of spin polarization at finite source-drain bias. They suggested electrons under the finite bias arrange themselves spontaneously into spin rows in the wire due to electron interactions leading to a finite spin polarization. Karlsson et al concluded that the orientation of the spin rows or polarization is LSOC dependent under finite source-drain bias. Their theoretical work of bias dependent spin polarization would be of interest to those working in spin physics [ 3 ]. Materials with large SO such as InGaAs are promising due to their potential for spintronics. However, high quality growth of these materials in comparison to GaAs still remains challenging. Gul et al have investigated quantum transport properties of molecular beam epitaxy grown In 0.75 Ga 0.25 As 1D channel realised using split gate devices. They observed ballistic transport characteristics with clear quantised conductance plateaus up to 6(2 e 2 / h ) at a measurement temperature of 50 mK and performed dc source-drain bias subband spectroscopy. They noted that for asymmetric gate biasing, a lateral spin–orbit coupling effect was weak, and the measured g -factor in the 1D channel was ~6.5 in the lowest subband [ 4 ]. Manipulating spins in a 0D system for quantum computing application, Milivojević theoretically analysed spin–orbit interaction in triple quantum dots as a source of spin–orbit leakage from the qubit space. In quantum computation schemes which are exchange driven, spin–orbit interaction is an undesired effect. The author has also analysed CNOT gates and suggested a scheme for the minimisation of leakage in cases where interacting -Abstract Truncated-

Transport studies of electron-hole and spin-orbit interaction in GaSb/InAsSb core-shell nanowire quantum dots

Quantum transport in an ambipolar InSb nanowire quantum dot device

Electronic g-factor and tunable spin-orbit coupling in a gate-defined InSbAs quantum dot

A quantitative study of spin-flip co-tunneling transport in a quantum dot

Electron-hole interactions in coupled InAs-GaSb quantum dots based on nanowire crystal phase templates

Hole transport in p-type GaAs quantum dots and point contacts

Phase coherent transport and spin-orbit interaction in GaAs/InSb core/shell nanowires

Spin States of Holes in Ge/Si Nanowire Quantum Dots.

Electron Transport Study of A Lateral Ingaas Quantum Dot

Numerical studies of transport and anisotropic exchange interaction in InAs nanowires

Top-gate defined double quantum dots in InAs nanowires

Stable quantum dots in an InSb two-dimensional electron gas

Consequences of Spin-Orbit Coupling at the Single Hole Level: Spin-Flip Tunneling and the Anisotropic g Factor

Gate Tunable Energy Gap and Negative Magnetoresistance of InAs/GaSb Core/shell Nanowires

Measurements of the spin-orbit interaction and Landé g factor in a pure-phase InAs nanowire double quantum dot in the Pauli spin-blockade regime

Observation of excited states in a p-type GaAs quantum dot

Spin-dependent transport in GaAs nanowire-based devices

Special issue on advances in quantum transport

Electronic structure of GaSb/AlGaSb quantum dots formed by filling droplet-etched nanoholes

Giant, Level-Dependent G Factors in InSb Nanowire Quantum Dots.

Quantum Spin Hall Effect in Inverted InAs/GaSb Quantum Wells