Abstract:The authors present fabrication and electrical measurements of InSb nanowire field-effect transistors (FETs) and quantum dots. The devices are made on a SiO2-capped Si substrate from InSb segments of InAs/InSb heterostructured nanowires, which are grown by metalorganic vapor phase epitaxy. For the FETs, both single- and dual-gate devices are fabricated. The Si substrate is employed as the back gate in both the single- and dual-gate devices, while a top metal gate is employed as a second gate in the dual-gate devices. This top gate is made either as a global gate or as a local finger gate by using a thin HfO2 layer grown by atomic layer deposition as a gate dielectric. The measurements reveal that the fabricated devices show the desired transistor characteristics. The measurements also demonstrate the possibility of realizing ambipolar transistors using InSb nanowires. For InSb nanowire quantum dots, both contact-induced Schottky-barrier-defined devices and top-finger-gate-defined devices are fabricated, and the Si substrate is used as a gate to tune the electron number in the quantum dots. The electrical measurements of these fabricated quantum-dot devices show the Coulomb-blockade effect at 4.2 K. A Fabry-Perot-like interference effect is also observed in a Schottky-barrier-defined quantum device. The authors also discuss in a comparative way, the results of measurements for the InSb nanowire devices made by different fabrication technologies employed in this study.

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Single-Gate Accumulation-Mode InGaAs Quantum Dot with a Vertically Integrated Charge Sensor

Charge State Readout And Hyperfine Interaction In A Few-Electron Ingaas Double Quantum Dot

Coulomb Blockade and Resonant Tunnelling in Etched and Regrown Ga0.25in0.75as/Inp Quantum Dots

Quantum transport in an ambipolar InSb nanowire quantum dot device

G-Factor and Exchange Energy in A Few-Electron Lateral Ingaas Quantum Dot

A quantitative study of spin-flip co-tunneling transport in a quantum dot

Observation of excited states in a p-type GaAs quantum dot

InSb Nanowire Field-Effect Transistors and Quantum-Dot Devices

Fabrication and characterization of InAs nanowire-based quantum dot structures utilizing buried bottom gates

Ultra-shallow quantum dots in an undoped GaAs/AlGaAs 2D electron gas

Electron Resonant Tunneling Through Inas/Gaas Quantum Dots Embedded in A Schottky Diode with an Alas Insertion Layer

Emission Rates for Electron Tunneling from InAs Quantum Dots to GaAs Substrate

Top-gate defined double quantum dots in InAs nanowires

Hole transport in p-type GaAs quantum dots and point contacts

Exciton transport in a germanium quantum dot ladder

Tunable few electron quantum dots in InAs nanowires

Ambipolar quantum dots in intrinsic silicon

Electronic g-factor and tunable spin-orbit coupling in a gate-defined InSbAs quantum dot