Abstract:The advanced nanoscale integration available in silicon complementary metal-oxide-semiconductor (CMOS) technology provides a key motivation for its use in spin-based quantum computing applications. Initial demonstrations of quantum dot formation and spin blockade in CMOS foundry-compatible devices are encouraging, but results are yet to match the control of individual electrons demonstrated in university-fabricated multi-gate designs. We show here that the charge state of quantum dots formed in a CMOS nanowire device can be sensed by using floating gates to electrostatically couple it to a remote single electron transistor (SET) formed in an adjacent nanowire. By biasing the nanowire and gates of the remote SET with respect to the nanowire hosting the quantum dots, we controllably form ancillary quantum dots under the floating gates, thus enabling the demonstration of independent control over charge transitions in a quadruple (2x2) quantum dot array. This device overcomes the limitations associated with measurements based on tunnelling transport through the dots and permits the sensing of all charge transitions, down to the last electron in each dot. We use effective mass theory to investigate the necessary optimization of the device parameters in order to achieve the tunnel rates required for spin-based quantum computation.

Ambipolar quantum dots in intrinsic silicon

Ambipolar quantum dots in undoped silicon fin field-effect transistors

Electrical Conduction of Silicon Oxide Containing Silicon Quantum Dots

Charge Sensing in Intrinsic Silicon Quantum Dots

Dispersive readout of reconfigurable ambipolar quantum dots in a silicon-on-insulator nanowire

An ambipolar single-charge pump in silicon

Strongly correlated charge transport in silicon MOSFET quantum dots

Hole transport in p-type GaAs quantum dots and point contacts

Bias spectroscopy and simultaneous SET charge state detection of Si:P double dots

A Silicon Cluster Based Single Electron Transistor with Potential Room-Temperature Switching

Electron Transport Study of A Lateral Ingaas Quantum Dot

Quantum transport in an ambipolar InSb nanowire quantum dot device

A gate-defined silicon quantum dot molecule

Undoped accumulation-mode Si/SiGe quantum dots

Quantum enhanced electric field mapping within semiconductor devices

Single hole transport in a silicon metal-oxide-semiconductor quantum dot

Passivation and characterization of charge defects in ambipolar silicon quantum dots

Dynamics of Tunneling into Charge-Tunable Si Quantum Dots

Quantum dots with split enhancement gate tunnel barrier control

Single-electron operation of a silicon-CMOS 2x2 quantum dot array with integrated charge sensing

Coulomb blockade in a nanoscale phosphorus-in-silicon island