Abstract:We study the low temperature electrical transport behaviour of a silicon single electron transistor. The island and leads are defined by patterned phosphorus doped regions achieved by ion implantation through a polymer resist mask. In the device a 50 nm diameter island, containing ~600 donors and having a metallic density of states, is separated from source and drain leads by undoped silicon tunnel barriers. The central island and tunnel barriers are covered by a surface gate in a field effect transistor geometry allowing the coupling between the leads and island to be controlled. Coulomb blockade due to charging of the doped island is measured, the oscillation period is observed to be constant while the charging energy is dependent on the surface gate voltage. We discuss the possibilities of approaching the few electron regime in these structures, with the aim of observing and manipulating discrete quantum mechanical states.

What problem does this paper attempt to address?

This paper aims to study the Coulomb blockade phenomenon in nano - scale phosphorus - doped silicon islands in order to achieve the observation and manipulation of single quantum states. Specifically, the paper attempts to solve the following key problems: 1. **Research on low - temperature electrical transport behavior**: The author studied the electrical transport characteristics of the device at low temperatures by constructing a single - electron transistor (SET). The device consists of a phosphorus - doped silicon island with a diameter of 50 nm, containing about 600 donor atoms and having a metallic - state density. 2. **Observation of the Coulomb blockade effect**: The Coulomb blockade is caused by the charge accumulation in the island and is manifested as an oscillation phenomenon when the current changes with the gate voltage. The oscillation period observed in the paper is constant, while the charging energy depends on the surface gate voltage \( V_g \). 3. **Possibility of approaching the few - electron region**: The author explored how to make the system enter the few - electron region (N < 100) by reducing the size and doping density of the island, so that discrete quantum - mechanical states can be observed and manipulated. This provides a possible basis for future quantum computing. 4. **Comparison with existing systems**: The paper also compared the advantages and disadvantages of different material systems (such as GaAs, SiGe, carbon nanotubes, etc.) in achieving coherent control, and pointed out the unique advantages and development potential of silicon - based quantum dots. In summary, the core issue of this paper is to explore the Coulomb blockade phenomenon in nano - scale phosphorus - doped silicon islands and its application prospects in quantum computing, especially how to achieve precise control of single quantum states by regulating the charge state in the island.

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