Abstract:We report a nanofabrication, control and measurement scheme for charge-based silicon quantum computing which utilises a new technique of controlled single ion implantation. Each qubit consists of two phosphorus dopant atoms ~50 nm apart, one of which is singly ionized. The lowest two energy states of the remaining electron form the logical states. Surface electrodes control the qubit using voltage pulses and dual single electron transistors operating near the quantum limit provide fast readout with spurious signal rejection. A low energy (keV) ion beam is used to implant the phosphorus atoms in high-purity Si. Single atom control during the implantation is achieved by monitoring on-chip detector electrodes, integrated within the device structure, while positional accuracy is provided by a nanomachined resist mask. We describe a construction process for implanted single atom and atom cluster devices with all components registered to better than 20 nm, together with electrical characterisation of the readout circuitry. We also discuss universal one- and two-qubit gate operations for this architecture, providing a possible path towards quantum computing in silicon.

Coulomb blockade in a nanoscale phosphorus-in-silicon island

Coulomb blockade in a Si channel gated by an Al single-electron transistor

Dopant-controlled single-electron pumping through a metallic island

Discrete Charging in Polysilicon Gates of Single Electron Transistors

Transport Through Dopant Atom Arrays in Silicon Junctionless Nanowire Transistor

Observation of Coulomb-blockade in a field-effect transistor with silicon nanocrystal floating gate at room temperature

A Silicon Cluster Based Single Electron Transistor with Potential Room-Temperature Switching

Observation of Coulomb Blockade Effect in Silicon Nanocrystallites at Room Temperature

Room-temperature single-electron tunneling in highly-doped silicon-on-insulator nanoscale field-effect transistors

Electrical Conduction of Silicon Oxide Containing Silicon Quantum Dots

Fabricating a Silicon Nanowire by Using the Proximity Effect in Electron Beam Lithography for Investigation of the Coulomb Blockade Effect

Electron Transport Behaviors Through Donor-Induced Quantum Dot Array In Heavily N-Doped Junctionless Nanowire Transistors

Coulomb Blockade Oscillations in Silicon Single-electron Transistor with a Strong Gate-dot Coupling

Electron Transport In Laterally Confined Phosphorus Delta Layers In Silicon

Charge-based silicon quantum computer architectures using controlled single-ion implantation

Coulomb-controlled Single Electron Field Emission Via a Freely Suspended Metallic Island.

P1&#x2013;21: Field Electron Emission under Coulomb Blockade in a Suspended Metallic Island

Ambipolar quantum dots in intrinsic silicon

Micromechanical electrometry of single-electron transistor island charge

RESONANT TUNNELING AND COULOMB BLOCKADE IN A NANOCRYSTALLINE Si DOUBLE-BARRIER FLOATING-GATE STRUCTURE

Classical Coulomb Blockade of A Silicon Nanowire Dot