Abstract:Quantum mechanical effects induced by the miniaturization of complementary metal-oxide-semiconductor (CMOS) technology hamper the performance and scalability prospects of field-effect transistors. However, those quantum effects, such as tunnelling and coherence, can be harnessed to use existing CMOS technology for quantum information processing. Here, we report the observation of coherent charge oscillations in a double quantum dot formed in a silicon nanowire transistor detected via its dispersive interaction with a radio-frequency resonant circuit coupled via the gate. Differential capacitance changes at the inter-dot charge transitions allow us to monitor the state of the system in the strong-driving regime where we observe the emergence of Landau-Zener-St{ü}ckelberg-Majorana interference on the phase response of the resonator. A theoretical analysis of the dispersive signal demonstrates that quantum and tunnelling capacitance changes must be included to describe the qubit-resonator interaction. Furthermore, a Fourier analysis of the interference pattern reveals a charge coherence time, $T_2\approx 100$~ps. Our results demonstrate charge coherent control and readout in a simple silicon transistor and open up the possibility to implement charge and spin qubits in existing CMOS technology.

Coulomb blockade in a Si channel gated by an Al single-electron transistor

Coulomb blockade in a nanoscale phosphorus-in-silicon island

Observation of Ionic Coulomb Blockade in Nanopores.

Coulomb Blockade Oscillations in Silicon Single-electron Transistor with a Strong Gate-dot Coupling

Observation of Coulomb-blockade in a field-effect transistor with silicon nanocrystal floating gate at room temperature

Electric-field-dependent spectroscopy of charge motion using a single-electron transistor

Gate-sensing coherent charge oscillations in a silicon field-effect transistor

Coulomb blockade in open superconducting islands on InAs nanowires

Observation of Coulomb Blockade Effect in Silicon Nanocrystallites at Room Temperature

A Silicon Cluster Based Single Electron Transistor with Potential Room-Temperature Switching

Discrete Charging in Polysilicon Gates of Single Electron Transistors

Room Temperature Resonant Tunneling and Coulomb Blockade in Nanocrystalline Si with Double SiO 2 Barriers

Room Temperature Resonant Tunneling and Coulomb Blockade in Nanocrystalline Si with Double SiO<sub>2</sub>

Room Temperature Resonant Tunneling and Coulomb Blockade in Nanocrystalline Si with Double SiO2

Detection of a single-charge defect in a metal-oxide-semiconductor structure using vertically coupled Al and Si single-electron transistors

Coulomb Oscillations Effect in Dual Gate Controlled Silicon Nanowire

Hybridization of sub-gap states in one-dimensional superconductor/semiconductor Coulomb islands

Transport Characteristics of Si-Based Single-Electron Transistors Having a High Gate Modulation Factor

RESONANT TUNNELING AND COULOMB BLOCKADE IN A NANOCRYSTALLINE Si DOUBLE-BARRIER FLOATING-GATE STRUCTURE

Size-Dependent Resonant Tunneling and Storing of Electrons in A Nanocrystalline Silicon Floating-Gate Double-Barrier Structure

Strong tunneling and Coulomb blockade in a single-electron transistor