Abstract:Gate-tunable quantum-mechanical tunnelling of particles between a quantum confined state and a nearby Fermi reservoir of delocalized states has underpinned many advances in spintronics and solid-state quantum optics. The prototypical example is a semiconductor quantum dot separated from a gated contact by a tunnel barrier. This enables Coulomb blockade, the phenomenon whereby electrons or holes can be loaded one-by-one into a quantum dot1,2. Depending on the tunnel-coupling strength3,4, this capability facilitates single spin quantum bits1,2,5 or coherent many-body interactions between the confined spin and the Fermi reservoir6,7. Van der Waals (vdW) heterostructures, in which a wide range of unique atomic layers can easily be combined, offer novel prospects to engineer coherent quantum confined spins8,9, tunnel barriers down to the atomic limit10 or a Fermi reservoir beyond the conventional flat density of states11. However, gate-control of vdW nanostructures12-16 at the single particle level is needed to unlock their potential. Here we report Coulomb blockade in a vdW heterostructure consisting of a transition metal dichalcogenide quantum dot coupled to a graphene contact through an atomically thin hexagonal boron nitride (hBN) tunnel barrier. Thanks to a tunable Fermi reservoir, we can deterministically load either a single electron or a single hole into the quantum dot. We observe hybrid excitons, composed of localized quantum dot states and delocalized continuum states, arising from ultra-strong spin-conserving tunnel coupling through the atomically thin tunnel barrier. Probing the charged excitons in applied magnetic fields, we observe large gyromagnetic ratios (∼8). Our results establish a foundation for engineering next-generation devices to investigate either novel regimes of Kondo physics or isolated quantum bits in a vdW heterostructure platform.

Strong tunneling and Coulomb blockade in a single-electron transistor

Coulomb blockade in one-dimensional arrays of high conductance tunnel junctions

A Silicon Cluster Based Single Electron Transistor with Potential Room-Temperature Switching

Calculating the Coulomb blockade phase diagram in the strong coupling regime of a single-electron transistor: a quantum Monte Carlo study

Coulomb Blockade Oscillations in Silicon Single-electron Transistor with a Strong Gate-dot Coupling

Calculating the Coulomb blockade phase diagram in the strong coupling regime of single-electron transistor: a quantum Monte Carlo study

Tunneling in heavy-fermion junctions

Multiple Functionality in Nanotube Transistors

Quantum Conductance of the Single Electron Transistor

Incoherent dynamics of vibrating single-molecule transistors

Coulomb blockade in monolayer MoS2 single electron transistor.

Control of Coulomb blockade in a mesoscopic Josephson junction using single electron tunneling

Coulomb blockade in an atomically thin quantum dot coupled to a tunable Fermi reservoir

Carbon-Nanotube-Based Single-Electron/Hole Transistors

3e tunneling processes in a superconducting single-electron tunneling transistor

Coulomb blockade and cotunneling in single electron circuits with on-chip resistors: towards the implementation of R-pump

Coulomb blockade in a Si channel gated by an Al single-electron transistor

Unusual Conductance Characteristics in Single Electron Transistor

Tunneling broadening of vibrational sidebands in molecular transistors

Cooper Pair Cotunneling in Single Charge Transistors with Dissipative Electromagnetic Environment

Gate-sensing coherent charge oscillations in a silicon field-effect transistor