Abstract:Electronic transport in monolayer MoS 2 is significantly constrained by several extrinsic factors despite showing good prospects as a transistor channel material. Our paper aims to unveil the underlying mechanisms of the electrical and magneto-transport in monolayer MoS 2 . In order to quantitatively interpret the magneto-transport behavior of monolayer MoS 2 on different substrate materials, identify the underlying bottlenecks, and provide guidelines for subsequent improvements, we present a deep analysis of the magneto-transport properties in the diffusive limit. Our calculations are performed on suspended monolayer MoS 2 and MoS 2 on different substrate materials taking into account remote impurity and the intrinsic and extrinsic phonon scattering mechanisms. We calculate the crucial transport parameters such as the Hall mobility, the conductivity tensor elements, the Hall factor, and the magnetoresistance over a wide range of temperatures, carrier concentrations, and magnetic fields. The Hall factor being a key quantity for calculating the carrier concentration and drift mobility, we show that for suspended monolayer MoS 2 at room temperature, the Hall factor value is around 1.43 for magnetic fields ranging from 0.001 to 1 Tesla, which deviates significantly from the usual value of unity. In contrast, the Hall factor for various substrates approaches the ideal value of unity and remains stable in response to the magnetic field and temperature. We also show that the MoS 2 over an Al 2 O 3 substrate is a good choice for the Hall effect detector. Moreover, the magnetoresistance increases with an increase in magnetic field strength for smaller magnetic fields before reaching saturation at higher magnetic fields. The presented theoretical model quantitatively captures the scaling of mobility and various magnetoresistance coefficients with temperature, carrier densities and magnetic fields.

Coulomb blockade in monolayer MoS2 single electron transistor.

Observation of Ionic Coulomb Blockade in Nanopores.

Metal-insulator crossover in monolayer MoS 2

Mobility engineering and metal-insulator transition in monolayer MoS2

Magneto-transport in the monolayer MoS2 material system for high-performance field-effect transistor applications

Low-Temperature Ohmic Contact to Monolayer MoS2 by van der Waals Bonded Co/h-BN Electrodes

Magneto-transport in the monolayer MoS 2 material system for high-performancefield-effect transistor applications

Low Temperature Carrier Transport Study of Monolayer MoS2 Field Effect Transistors Prepared by Chemical Vapor Deposition under an Atmospheric Pressure

Charge Transport and Quantum Confinement in MoS2dual-gated Transistors

Low Temperature Nanoscale Electronic Transport on the MoS_2 surface

Multi-terminal electrical transport measurements of molybdenum disulphide using van der Waals heterostructure device platform

Transport Properties of MoO&lt;sub&gt;3&lt;/sub&gt; Contacted Few-Layer MoS&lt;sub&gt;2&lt;/sub&gt; N-type Field-Effect Transistor

Evidence of the Coulomb gap in the density of states of MoS$_2$

Mechanically Modulated Tunneling Resistance in Monolayer MoS2

Formation of quantum dots in MoS2 with cryogenic Bi contacts and intrinsic Schottky barriers

Conduction Mechanisms in CVD-Grown Monolayer MoS2 Transistors: from Variable-Range Hopping to Velocity Saturation.

Transport properties of MoO 3 contacted few-layer MoS 2 N-type field-effect transistor

Magnetic Field Enhanced Single Particle Tunneling in MoS2–superconductor Vertical Josephson Junction*

Phase Transition and Field Effect Topological Quantum Transistor made of monolayer MoS2

Switching Mechanism in Single-Layer Molybdenum Disulfide Transistors: an Insight into Current Flow across Schottky Barriers

Multi-terminal Transport Measurements of MoS2 Using a Van Der Waals Heterostructure Device Platform.