Abstract:Electrostatically defined nanoscale devices within 2D semiconductor heterostructures, especially van der Waals heterostructures, offer advantages such as uniformity and flexibility. Investigating MoS2/WSe2 heterostructures under split gate and middle gate control unveils unique electronic behavior, highlighting quantum confinement and precise electrostatic control, and advancing the understanding of 2D materials for future electronic devices. The exponential development in quantum phenomena is directly correlated with the decreasing size of nano‐semiconductor transistors. Consequently, the use of a quantum structure that deviates from traditional transistor types becomes imperative. Electrostatically defined nanoscale devices within 2D semiconductor heterostructures serve as foundational elements for diverse quantum electrical circuits. Van der Waals heterostructures, distinguished by atomically flat interfaces and inherent 2D characteristics, offer advantages such as large‐scale uniformity, flexibility, and portability over conventional bulk semiconductor heterostructures. Herein, the intricate electronic behavior of a MoS2/WSe2 encapsulated heterostructure governed by split‐gate and middle‐gate configurations is investigated, revealing a distinctive step‐like current profile at a low temperature of 77 K. The observed four regimes in the current highlight the impact of quantum confinement induced by reduced lateral dimensions, coupled with precise electrostatic confinement controlled by gate voltages. The temperature dependence of the phenomena emphasizes the role of thermal effects on carrier scattering mechanisms. In addition, the pinch‐off characteristics with different temperatures, middle‐gate voltages, and drain biases are explored. This study contributes to a deeper understanding of electrostatic effects in 2D transition metal dichalcogenide heterostructures and holds promise for the development of advanced electronic devices with tailored confinement for enhanced functionalities.

Formation of quantum dots in MoS2 with cryogenic Bi contacts and intrinsic Schottky barriers

Non-Destructive Low-Temperature Contacts to MoS2 Nanoribbon and Nanotube Quantum Dots

Coulomb blockade in monolayer MoS2 single electron transistor.

Non-invasively Improving the Schottky Barrier of MoS2/metal Contacts by Inserting a SiC Layer

Strain-engineered Robust and Schottky-barrier-free Contact in 2D Metal–semiconductor Heterostructure

Exploring Electrostatic Confinement Transport in MoS2/WSe2 Heterostructure via Triple‐Gated Point Contact Device

Symmetry breaking and spin-orbit coupling for individual vacancy-induced in-gap states in MoS2 monolayers

Interface effects of Schottky devices built from MoS2 and high work function metals

An Inside Look at the Ti-MoS2 Contact in Ultra-thin Field Effect Transistor with Atomic Resolution

Quantum Dot Behavior in Transition Metal Dichalcogenides Nanostructures

Towards Barrier Free Contact to MoS2 Using Graphene Electrodes

Multi-terminal electrical transport measurements of molybdenum disulphide using van der Waals heterostructure device platform

Sub 20 meV Schottky barriers in metal/MoTe2 junctions

Mobility engineering and metal-insulator transition in monolayer MoS2

A Planar Al-Si Schottky Barrier Metal-Oxide-Semiconductor Field Effect Transistor Operated at Cryogenic Temperatures

Quantum Transport in Two-Dimensional WS$_2$ with High-Efficiency Carrier Injection Through Indium Alloy Contacts

Low Contact Resistance on Monolayer MoS2 Field-Effect Transistors Achieved by CMOS-Compatible Metal Contacts

Inlaid ReS2 Quantum Dots in Monolayer MoS2

Tunable Schottky contacts in MSe 2 /NbSe 2 (M = Mo and W) heterostructures and promising application potential in field-effect transistors.

Charge Transport and Quantum Confinement in MoS2dual-gated Transistors

Spin-Polarized Tunneling through Chemical Vapor Deposited Multilayer Molybdenum Disulfide