Formation of quantum dots in MoS2 with cryogenic Bi contacts and intrinsic Schottky barriers

Riku Tataka,Alka Sharma,Tomoya Johmen,Takeshi Kumasaka,Motoya Shinozaki,Yong P. Chen,Tomohiro Otsuka

DOI: https://doi.org/10.48550/arXiv.2210.11897

2022-10-21

Abstract:The recent advancement in two-dimensional (2D) materials-based quantum confinement has provided an opportunity to investigate and manipulate electron transport for quantum applications. However, the issues of metal/semiconductor interface effects create a hurdle to realize the artificial fabrication of the quantum dot and study the quantum transport. Here, we utilize the strategy of employing the semimetal for Ohmic contacts with transition metal dichalcogenides especially, multilayer MoS2 and successfully fabricate the MoS2-Bi based FET devices. We observe the Ohmic behavior in the MoS2-Bi devices at cryogenic temperatures 4.2, 2.3 and 0.4 K. We also utilize intrinsic Schottky barriers formed at the interface between MoS2 and Au for the gate electrodes to form and control quantum dots. We observed Coulomb diamonds in MoS2 devices at cryogenic temperature. Our results of quantum transport in MoS2 could serve as a stepping stone for investigating novel quantum effects such as spin-valley coupling and the manipulation of qubit systems.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The main problem that this paper attempts to solve is: under low - temperature conditions, use bismuth (Bi) as a contact electrode and the inherent Schottky barrier to realize the fabrication and regulation of MoS₂ quantum - dot devices. Specifically, the researchers face the following challenges:

1. **Metal/semiconductor interface effect**: Traditional metal contacts will lead to high contact resistance at low temperatures, which hinders the artificial fabrication of quantum dots and the research on quantum transport.
2. **Forming high - quality ohmic contacts**: In a low - temperature environment, how to achieve low - resistance, high - quality ohmic contacts between MoS₂ and metals.
3. **Formation and control of quantum dots**: Through the gate electrode formed by using the Schottky barrier, how to form and control quantum dots in MoS₂.

### Solutions

- **Using bismuth (Bi) as a contact material**: Bismuth is a semimetal that can form zero - barrier contacts with multilayer MoS₂ at low temperatures, thereby achieving ohmic contacts. The experimental results show that this contact exhibits good ohmic behavior at low temperatures of 4.2 K, 2.3 K, and 0.4 K.

- **Utilizing the inherent Schottky barrier**: By using the inherent Schottky barrier formed between MoS₂ and gold (Au) as a gate electrode, the formation and regulation of quantum dots are achieved. Coulomb diamond structures were observed in the experiment, indicating that quantum dots were successfully formed.

### Experimental results

- **Ohmic contacts at low temperatures**: Under different low - temperature conditions, the MoS₂ - Bi device exhibits stable ohmic behavior, verifying the effectiveness of bismuth as a low - temperature contact material.
- **Formation and characteristics of quantum dots**: The quantum dots formed by the surface fine - gate electrode show an obvious Coulomb blockade effect, and the charging energy \(E_c = 0.9 \, \text{meV}\) is extracted, corresponding to the total capacitance \(C = 90 \, \text{aF}\) of the quantum dots.

### Significance

This research provides an important foundation for exploring new quantum effects (such as spin - valley coupling) in two - dimensional transition metal dichalcogenides (TMDCs) and manipulating qubit systems. These results are helpful for promoting the development of quantum computing and quantum information processing technologies.