Abstract:While the promise of clean and defect-free $\textrm{MoS}_{2}$ nanotubes as quantum electronic devices is obvious, ranging from strong spin-orbit interaction to intrinsic superconductivity, device fabrication still poses considerable challenges. Deterministic transfer of transition metal dichalcogenide nanomaterials and transparent contacts to the nanomaterials are nowadays highly active topics of research, both with fundamental research and applications in mind. Contamination from transport agents as well as surface adsorbates and surface charges play a critical role for device performance. Many techniques have been proposed to address these topics for transition metal dichalcogenides in general. Here, we analyse their usage for the transfer based fabrication of $\textrm{MoS}_{2}$ nanotube devices. Further, we compare different contact materials in order to avoid the formation of a Schottky barrier.

What problem does this paper attempt to address?

### What problems does this paper attempt to solve? This paper mainly explores the problems of MoS₂ nanotube devices in terms of material transfer and contact optimization. Specifically, the paper focuses on the following key issues: 1. **The application potential of clean and defect - free MoS₂ nanotubes as quantum electronic devices**: - MoS₂ nanotubes have remarkable properties such as significant spin - orbit interaction and intrinsic superconductivity, but their device fabrication still faces many challenges. - The paper aims to improve the performance of MoS₂ nanotube devices by improving material transfer techniques and the selection of contact materials. 2. **The pollution problem in material transfer**: - During the transfer process, transport agents, surface adsorbates and surface charges can have an important impact on device performance. - The researchers analyzed the effects of different transfer techniques on MoS₂ nanotube devices and compared the effectiveness of these techniques. 3. **The selection of contact materials to avoid the formation of Schottky barriers**: - The interface between metals and MoS₂ semiconductors usually forms a strong Schottky barrier, resulting in a large contact resistance. - The paper studied a variety of contact materials (such as titanium, bismuth, antimony, etc.) to find the best material combination that can achieve ohmic contact. 4. **The different challenges of nanotube - to - planar - material contacts**: - Due to differences in geometry, traditional planar - material contact methods are not suitable for MoS₂ nanotubes. - The paper explored several new contact methods, especially using semimetals (such as bismuth) to avoid the formation of Schottky barriers. 5. **The effects of different transfer techniques on device performance**: - The paper compared the effects of different transfer techniques such as the "Scotch tape" method, the suspension method, the polycarbonate - assisted method and the anthracene - crystal - assisted method. - The results show that the simplest "Scotch tape" method performs best in many cases, while other complex methods may introduce more pollution or reduce contact quality. ### Summary The main goal of this paper is to overcome the challenges in the fabrication of MoS₂ nanotube devices by optimizing material transfer techniques and selecting appropriate contact materials, thereby achieving high - performance quantum electronic devices. The focus of the research is on reducing pollution, avoiding the formation of Schottky barriers, and improving the reliability and performance of devices.

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