Abstract:The semiconductor industry has been facing obstacles in designing low-power (LP) nanoelectronic devices due to the lack of accurate theoretical simulations and low-resistance contacts of heterojunctions. Here, based on experimental data, we discover that the generalized gradient approximation using the Fritz Haber Institute pseudopotential accurately describes the lattice constants and electronic properties of monolayer MoSi2N4 . It is further confirmed that this method is also applicable to characterize the electrical contact properties and device transport characteristics of metal /MoSi2N4 heterojunctions (where metal includes Sc,Bi,Ag,Al,Ti , graphene, Cr , Fe,Cu,Co,Au,Pd,Ni, and Pt ). Calculations show that various bulk metal/ MoSi2N4 heterojunctions exhibit n -type Schottky barrier contact features, and it is possible to achieve 100% carrier injection for MoSi2N4 with Sc,Ag,Ti,Pd, and Pt contacts. Using the Schottky-Mott rule and quantum transport simulation, a strong Fermi-level pinning effect at the metal /MoSi2N4 interfaces is observed, and Sc is identified as the best metal electrode. The 5.1-nm p - i - n field-effect transistor (FET) with Sc electrodes can meet the off -state current requirement of the 2013 International Technology Roadmap for Semiconductors standard for high-performance and LP FET devices. By employing a high- k gate, the on -state current for the undoped LP device can be improved by 2 orders of magnitude, and its high on:off ratio is up to 3 × 106 . These findings provide insights into the metal/ MoSi2N4 interface behaviors and provide a theoretical reference for designing MoSi2N4 -based nanoelectronic devices by selecting suitable electrodes with low contact resistance. https://doi.org/10.1103/PhysRevApplied.21.054062 © 2024 American Physical Society

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