Abstract:The development of next-generation electronics requires scaling of channel material thickness down to the two-dimensional limit while maintaining ultralow contact resistance 1,2 . Transition-metal dichalcogenides can sustain transistor scaling to the end of roadmap, but despite a myriad of efforts, the device performance remains contact-limited 3,4,5,6,7,8,9,10,11,12 . In particular, the contact resistance has not surpassed that of covalently bonded metal–semiconductor junctions owing to the intrinsic van der Waals gap, and the best contact technologies are facing stability issues 3,7 . Here we push the electrical contact of monolayer molybdenum disulfide close to the quantum limit by hybridization of energy bands with semi-metallic antimony ( ) through strong van der Waals interactions. The contacts exhibit a low contact resistance of 42 ohm micrometres and excellent stability at 125 degrees Celsius. Owing to improved contacts, short-channel molybdenum disulfide transistors show current saturation under one-volt drain bias with an on-state current of 1.23 milliamperes per micrometre, an on/off ratio over 10 8 and an intrinsic delay of 74 femtoseconds. These performances outperformed equivalent silicon complementary metal–oxide–semiconductor technologies and satisfied the 2028 roadmap target. We further fabricate large-area device arrays and demonstrate low variability in contact resistance , threshold voltage, subthreshold swing, on/off ratio, on-state current and transconductance 13 . The excellent electrical performance, stability and variability make antimony ( ) a promising contact technology for transition-metal-dichalcogenide-based electronics beyond silicon.

Design of ohmic contacts between Janus MoSSe and two-dimensional metals

Dipole-induced Ohmic contacts between monolayer Janus MoSSe and bulk metals

Contact engineering for 2D Janus MoSSe/metal junctions

Designing Efficient Metal Contacts to Two-Dimensional Semiconductors MoSi$_2$N$_4$ and WSi$_2$N$_4$ Monolayers

Ohmic contacts in MXene/MoSi2N4 heterojunctions

Utilizing the Janus MoSSe surface polarization in designing complementary metal-oxide-semiconductor field-effect transistors

Janus MoSH/WSi2N4 van der Waals Heterostructure: Two-Dimensional Metal/Semiconductor Contact

Engineering Schottky-to-Ohmic contact transition for 2D metal–semiconductor junctions

Asymmetric Schottky Contacts in van der Waals Metal-Semiconductor-Metal Structures Based on Two-Dimensional Janus Materials

Transition from Schottky to ohmic contacts in the C 31 and MoS 2 van der Waals heterostructure

Efficient Ohmic contacts and built-in atomic sublayer protection in MoSi2N4 and WSi2N4 monolayers

Designing Barrier-Free Metal/MoS 2 Contacts through Electrene Insertion

Contact Optimisation Strategy for Wafer-Scale Field-Effect Transistors Based on Two-Dimensional Semiconductors

Approaching the quantum limit in two-dimensional semiconductor contacts

Electrical contacts to few-layer MoS 2 with phase-engineering and metal intercalation for tuning the contact performance

Theoretical prediction of electronic properties and contact barriers in a metal/semiconductor NbS2/Janus MoSSe van der Waals heterostructure

First-principles study of controllable contact types in Janus MoSH/GaN van der Waals heterostructure

4H-SiC Ohmic contacts formation by MoS2 layer intercalation: A first-principles study

A "click" Reaction to Engineer MoS2 Field-Effect Transistors with Low Contact Resistance.

One-dimensional semimetal contacts to two-dimensional semiconductors