Abstract:Continuing advancements in quantum information processing have caused a paradigm shift from research mainly focused on testing the reality of quantum mechanics to engineering qubit devices with numbers required for practical quantum computation. One of the major challenges in scaling toward large-scale solid-state systems is the limited input/output (I/O) connectors present in cryostats operating at sub-kelvin temperatures required to execute quantum logic with high-fidelity. This interconnect bottleneck is equally present in the device fabrication-measurement cycle, which requires high-throughput and cryogenic characterization to develop quantum processors. Here we multiplex quantum transport of two-dimensional electron gases at sub-kelvin temperatures. We use commercial off-the-shelf CMOS multiplexers to achieve an order of magnitude increase in the number of wires. Exploiting this technology we advance 300 mm epitaxial wafers manufactured in an industrial CMOS fab to a record electron mobility of (3.9$\pm$0.6)$\times$10$^5$ cm$^2$\slash Vs and percolation density of (6.9$\pm$0.4)$\times$10$^{10}$ cm$^{-2}$, representing a key step toward large silicon qubit arrays. We envision that the demonstration will inspire the development of cryogenic electronics for quantum information and because of the simplicity of assembly, low-cost, yet versatility, we foresee widespread use of similar cryo-CMOS circuits for high-throughput quantum measurements and control of quantum engineered systems.

A Planar Al-Si Schottky Barrier Metal-Oxide-Semiconductor Field Effect Transistor Operated at Cryogenic Temperatures

Millikelvin Si-MOSFETs for Quantum Electronics

Dual Operation of Gate-All-Around Silicon Nanowires at Cryogenic Temperatures: FET and Quantum Dot

Exploring Intertwined Quantum and Cryogenic Behaviour in Ultra-Scaled 10nm MOSFET: A NEGF Quantum Ballistic Simulation

Cryogenic Transport Characteristics of P-Type Gate-All-Around Silicon Nanowire MOSFETs

MOSFET Characterization and Modeling at Cryogenic Temperatures

Multiplexed quantum transport using commercial off-the-shelf CMOS at sub-kelvin temperatures

Characterization and Modelling of Mosfet Operating at Cryogenic Temperature for Hybrid Superconductor-Cmos Circuits

Comparative Cryogenic Investigation of FD-SOI Devices with Doped Epitaxial and Metallic Source/Drain

Ultra-steep slope cryogenic FETs based on bilayer graphene

Engineering Si-Qubit MOSFETs: A Phase-Field Modeling Approach Integrating Quantum-Electrostatics at Cryogenic Temperatures

Method for Efficient Large-Scale Cryogenic Characterization of CMOS Technologies

Low Temperature Operation Of Mosfet For High-Speed Digital Circuits

Characterization and Modeling of 0.18μm CMOS Technology at sub-Kelvin Temperature

Ultrasteep Slope Cryogenic FETs Based on Bilayer Graphene

High-Frequency Performance of MoS2 Transistors at Cryogenic Temperatures

Efficient system for bulk characterization of cryogenic CMOS components

A planar asymmetric Schottky barrier source/drain structure for nano-scale MOSFETs

Development of Schottky barrier field-effect transistors (SB-MOSFET) with ultra-low thermal budget

Investigation of Analog/RF behaviour of Asymmetrical Gate Tunnel FET at Cryogenic temperatures

Physics and performance of nanoscale semiconductor devices at cryogenic temperatures