Abstract:The most promising quantum algorithms require quantum processors that host millions of quantum bits when targeting practical applications<a href="/articles/s41586-021-03469-4#ref-CR1">1</a>. A key challenge towards large-scale quantum computation is the interconnect complexity. In current solid-state qubit implementations, an important interconnect bottleneck appears between the quantum chip in a dilution refrigerator and the room-temperature electronics. Advanced lithography supports the fabrication of both control electronics and qubits in silicon using technology compatible with complementary metal oxide semiconductors (CMOS)<a href="/articles/s41586-021-03469-4#ref-CR2">2</a>. When the electronics are designed to operate at cryogenic temperatures, they can ultimately be integrated with the qubits on the same die or package, overcoming the 'wiring bottleneck'<a href="#ref-CR3">3</a>,<a href="#ref-CR4">4</a>,<a href="#ref-CR5">5</a>,<a href="/articles/s41586-021-03469-4#ref-CR6">6</a>. Here we report a cryogenic CMOS control chip operating at 3 kelvin, which outputs tailored microwave bursts to drive silicon quantum bits cooled to 20 millikelvin. We first benchmark the control chip and find an electrical performance consistent with qubit operations of 99.99 per cent fidelity, assuming ideal qubits. Next, we use it to coherently control actual qubits encoded in the spin of single electrons confined in silicon quantum dots<a href="#ref-CR7">7</a>,<a href="#ref-CR8">8</a>,<a href="/articles/s41586-021-03469-4#ref-CR9">9</a> and find that the cryogenic control chip achieves the same fidelity as commercial instruments at room temperature. Furthermore, we demonstrate the capabilities of the control chip by programming a number of benchmarking protocols, as well as the Deutsch–Josza algorithm<a href="/articles/s41586-021-03469-4#ref-CR10">10</a>, on a two-qubit quantum processor. These results open up the way towards a fully integrated, scalable silicon-based quantum computer.

Millikelvin Si-MOSFETs for Quantum Electronics

Multiplexed quantum transport using commercial off-the-shelf CMOS at sub-kelvin temperatures

Exploring Intertwined Quantum and Cryogenic Behaviour in Ultra-Scaled 10nm MOSFET: A NEGF Quantum Ballistic Simulation

Millikelvin temperature cryo-CMOS multiplexer for scalable quantum device characterisation

Cryo-CMOS Band-gap Reference Circuits for Quantum Computing

Method for Efficient Large-Scale Cryogenic Characterization of CMOS Technologies

CMOS-based cryogenic control of silicon quantum circuits

A Planar Al-Si Schottky Barrier Metal-Oxide-Semiconductor Field Effect Transistor Operated at Cryogenic Temperatures

An Integrated Deep-Cryogenic Temperature Sensor in CMOS Technology for Quantum Computing Applications

Cryogenic Characerization and Modeling of Standard CMOS down to Liquid Helium Temperature for Quantum Computing

Efficient system for bulk characterization of cryogenic CMOS components

Cryogenic Modeling of Standard CMOS for Quantum Computing

Characterization and Modeling of 0.18μm CMOS Technology at sub-Kelvin Temperature

Characterization and Modeling of 0.18μm Bulk CMOS Technology at Sub-Kelvin Temperature

Integrated multiplexed microwave readout of silicon quantum dots in a cryogenic CMOS chip

Design and cryogenic operation of a hybrid quantum-CMOS circuit

Measurement of cryoelectronics heating using a local quantum dot thermometer in silicon

Cryogenic Compact mm-Wave Broadband SPST Switch in 22nm FDSOI CMOS for Monolithic Quantum Processors

A low-power integrated magneto-optic modulator on silicon for cryogenic applications

Cryo-CMOS for Quantum System On-Chip Integration: Quantum Computing as the Development Driver

Investigation of Electrical Characteristics on SiC MOSFET and JBS-Integrated MOSFET at Cryogenic Temperatures