Abstract:Continuing advancements in quantum information processing have caused a paradigm shift from research mainly focused on testing the reality of quantum mechanics to engineering qubit devices with numbers required for practical quantum computation. One of the major challenges in scaling toward large-scale solid-state systems is the limited input/output (I/O) connectors present in cryostats operating at sub-kelvin temperatures required to execute quantum logic with high-fidelity. This interconnect bottleneck is equally present in the device fabrication-measurement cycle, which requires high-throughput and cryogenic characterization to develop quantum processors. Here we multiplex quantum transport of two-dimensional electron gases at sub-kelvin temperatures. We use commercial off-the-shelf CMOS multiplexers to achieve an order of magnitude increase in the number of wires. Exploiting this technology we advance 300 mm epitaxial wafers manufactured in an industrial CMOS fab to a record electron mobility of (3.9$\pm$0.6)$\times$10$^5$ cm$^2$\slash Vs and percolation density of (6.9$\pm$0.4)$\times$10$^{10}$ cm$^{-2}$, representing a key step toward large silicon qubit arrays. We envision that the demonstration will inspire the development of cryogenic electronics for quantum information and because of the simplicity of assembly, low-cost, yet versatility, we foresee widespread use of similar cryo-CMOS circuits for high-throughput quantum measurements and control of quantum engineered systems.

Characterization and Modeling of 0.18μm CMOS Technology at sub-Kelvin Temperature

Cryogenic Characerization and Modeling of Standard CMOS down to Liquid Helium Temperature for Quantum Computing

MOSFET Characterization and Modeling at Cryogenic Temperatures

Advanced ice lithography system using a micro-machined Joule-Thomson cooler

Advancing Cryogenic Electronic Cooling: A Case Study on Embedded Manifold Microchannels in Micromachined Joule-Thomson Coolers

Characterization and Compact Modeling of Short Channel MOSFETs at Cryogenic Temperatures

Method for Efficient Large-Scale Cryogenic Characterization of CMOS Technologies

Characterization and Modeling of Native MOSFETs Down to 4.2 K

Efficient system for bulk characterization of cryogenic CMOS components

Multiplexed quantum transport using commercial off-the-shelf CMOS at sub-kelvin temperatures

Characterization and Modeling of Self-Heating in Nanometer Bulk-CMOS at Cryogenic Temperatures

Characterization and Modelling of Mosfet Operating at Cryogenic Temperature for Hybrid Superconductor-Cmos Circuits

Optimized Cryo-CMOS Technology with VTH<0.2V and Ion>1.2mA/um for High-Peformance Computing

Low-temperature CMOS Technology for High-Performance Computing: Development and Challenges

Physics-Based and Closed-Form Model for Cryo-CMOS Subthreshold Swing

Generic Cryo-CMOS Device Modeling and EDACompatible Platform for Reliable Cryogenic IC Design

Millikelvin Si-MOSFETs for Quantum Electronics

CMOS on-chip thermometry at deep cryogenic temperatures

Investigation and Subcircuit Modeling of Self-Heating in PDSOI NFETs at Cryogenic Temperatures Using Pulsed I – V Technique for Co-Integrated Quantum Technologies

Cryogenic Characterization of Commercial Devices for Application of Quantum Computing Electronics.