Abstract:Semiconductor integrated circuits operated at cryogenic temperature will play an essential role in quantum computing architectures. These can offer equivalent or superior performance to their room-temperature counterparts while enabling a scaling up of the total number of qubits under control. Silicon integrated circuits can be operated at a temperature stage of a cryogenic system where cooling power is sufficient ($\sim$3.5+ K) to allow for analog signal chain components (e.g. amplifiers and mixers), local signal synthesis, signal digitization, and control logic. A critical stage in cryo-electronics development is the characterization of individual transistor devices in a particular technology node at cryogenic temperatures. This data enables the creation of a process design kit (PDK) to model devices and simulate integrated circuits operating well below the minimum standard temperature ranges covered by foundry-released models (e.g. -55 °C). Here, an efficient approach to the characterization of large numbers of components at cryogenic temperature is reported. We developed a system to perform DC measurements with Kelvin sense of individual transistors at 4.2 K using integrated on-die multiplexers, enabling bulk characterization of thousands of devices with no physical change to the measurement setup.

Characterization and Modelling of Mosfet Operating at Cryogenic Temperature for Hybrid Superconductor-Cmos Circuits

Low Temperature Operation Of Mosfet For High-Speed Digital Circuits

MOSFET Characterization and Modeling at Cryogenic Temperatures

Characterization and Compact Modeling of Short Channel MOSFETs at Cryogenic Temperatures

Characterization and Modeling of 0.18μm CMOS Technology at sub-Kelvin Temperature

Characterization and Modeling of Native MOSFETs Down to 4.2 K

Characterization and Modeling of Self-Heating in Nanometer Bulk-CMOS at Cryogenic Temperatures

Cryogenic Characerization and Modeling of Standard CMOS down to Liquid Helium Temperature for Quantum Computing

A New Framework to MOS Device for Cryogenic Application: Linking Materials with Modeling

A Planar Al-Si Schottky Barrier Metal-Oxide-Semiconductor Field Effect Transistor Operated at Cryogenic Temperatures

Generic Cryo-CMOS Device Modeling and EDACompatible Platform for Reliable Cryogenic IC Design

Method for Efficient Large-Scale Cryogenic Characterization of CMOS Technologies

Extending Standard BSIM-BULK Model to Cryogenic Temperatures

Efficient system for bulk characterization of cryogenic CMOS components

Modeling of Circuits with Strongly Temperature Dependent Thermal Conductivities for Cryogenic CMOS

Investigation and Subcircuit Modeling of Self-Heating in PDSOI NFETs at Cryogenic Temperatures Using Pulsed I – V Technique for Co-Integrated Quantum Technologies

A Physics-Oriented Model of Cryogenic MOSFETs Including the Subthreshold Kink Effects

Physics-Based and Closed-Form Model for Cryo-CMOS Subthreshold Swing

High-Frequency Performance of MoS2 Transistors at Cryogenic Temperatures

Cryogenic and high temperature performance of 4H-SiC power MOSFETs

High Temperature Characterization Of 4h-Sic Normally-On Vertical Jfets With Buried Gate And Buried Field Rings