Abstract:We experimentally demonstrate that the dominant mechanism of single-event transients in silicon-germanium heterojunction bipolar transistors (SiGe HBTs) can change with decreasing temperature from +20 °C to −180 °C. This is accomplished by using a new well-designed cryogenic experimental system suitable for a pulsed-laser platform. Firstly, when the temperature drops from +20 °C to −140 °C, the increased carrier mobility drives a slight increase in transient amplitude. However, as the temperature decreases further below −140 °C, the carrier freeze-out brings about an inflection point, which means the transient amplitude will decrease at cryogenic temperatures. To better understand this result, we analytically calculate the ionization rates of various dopants at different temperatures based on Altermatt’s new incomplete ionization model. The parasitic resistivities with temperature on the charge-collection pathway are extracted by a two-dimensional (2D) TCAD process simulation. In addition, we investigate the impact of temperature on the novel electron-injection process from emitter to base under different bias conditions. The increase of the emitter–base junction’s barrier height at low temperatures could suppress this electron-injection phenomenon. We have also optimized the built-in voltage equations of a high current compact model (HICUM) by introducing the impact of incomplete ionization. The present results and methods could provide a new reference for effective evaluation of single-event effects in bipolar transistors and circuits at cryogenic temperatures, and could provide a new evidence of the potential of SiGe technology in applications in extreme cryogenic environments.

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High-Temperature Performance of MoS2 Thin-Film Transistors: DC and Pulse Current-Voltage Characteristics

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High-Performance CVD Bilayer MoS<sub>2</sub> Radio Frequency Transistors and Gigahertz Mixers for Flexible Nanoelectronics

The Electrical Performances of Monolayer MoS2-based Transistors under Ultra- Low Temperature

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Fast Thermodynamic Study on a Silicon Nanotransistor at Cryogenic Temperatures

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Flexible High-Temperature MoS 2 Field-Effect Transistors and Logic Gates

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Characterization and Modelling of Mosfet Operating at Cryogenic Temperature for Hybrid Superconductor-Cmos Circuits

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Temperature dependence of single-event transients in SiGe heterojunction bipolar transistors for cryogenic applications

Pushing the Performance Limit of Sub-100 nm Molybdenum Disulfide Transistors.

Improved Thermal Dissipation in a MoS2 Field-Effect Transistor by Hybrid High-k Dielectric Layers