Performance Potential and Limit of MoS₂ Transistors

Xuefei Li,Lingming Yang,Mengwei Si,Sichao Li,Mingqiang Huang,Peide Ye,Yanqing Wu

2015-01-01

Abstract:DOI: 10.1002/adma.201405068 and measured by atomic force microscopy (AFM) as shown in Figure 1 b,c, the thickness of which is around 6 nm, corresponding to about 9 layers. Details about the doping method and its effect are given in Figure S1 (Supporting Information). Arrays of devices with four different channel lengths from 1 μm down to 100 nm were fabricated by electron beam lithography. All the measurements were conducted in vacuum (≤10 −5 Torr) to prevent any impact from the environment. [ 21 ] Figure 2 a–b shows the direct current (DC) output characteristics of a representative 100-nm channel MoS 2 FET at 300 and 20 K, with a drain voltage from 0 to 1.5 V and back-gate voltage from –45 to 40 V. Evidently, the current saturation becomes more signifi cant as the temperature decreases, even starting to show the sign of negative differential resistance (NDR) effect which will be discussed in details later. At room temperature, the maximum drain current is 334 μA μm −1 for this device, and the highest current among all our seventeen 100-nm devices reaches 550 μA μm −1 at room temperature (Figure S2, Supporting Information), which is larger than previous MoS 2 devices reported, including top-gated device with optimized interface engineering. [ 22 ] For the device without doping, oncurrent is only 126 μA μm −1 as shown in Figure S1 (Supporting Information). Comparing to on-resistance R on of 13.3 kΩ·μm for the device without doping, the doped device shows a much lower R on of 3 kΩ·μm. When the temperature decreases to 20 K, the drain current of this device further increases by 240% to 800 μA μm −1 , which is the highest drive current reported so far on MoS 2 FETs. Although it is achieved at low temperature, this greatly improved metric extends the current carrying capability of thin fi lm MoS 2 transistors much closer to that of the silicon standard. More importantly, it shows the vital roles that extrinsic factors such as doping effects and phonon scatterings play in the MoS 2 transistors, and further optimization from these aspects can have huge impact on device performance. The transfer characteristics at V d = 1 V from the same device are plotted in Figure 2 c. Similarly, a near 240% increase of drain current and transconductance is obtained when the temperature decreases from 300 to 20 K. Figure 3 a shows the R on as a function of temperature at fi xed gate voltage V g = 40 V for two best 100-nm devices, where R on decreases with decreasing temperature. An ultralow R on of 0.83 kΩ·μm at 20 K is obtained for the 100-nm device, which is signifi cantly lower than the previous results in the literatures. [ 1,3,5,11 ] The fi eld-effect mobility μ FE is extracted in the linear region of the transfer characteristics according to the following equation: /( ), FE m g μ = g C EW where W is the width of the channel , E is the transverse electric fi eld in the channel, and g m is the transconductance. The temperature dependence of μ FE for four different channel length devices at various temperatures is plotted in Figure 3 b, showing a sharp increase when the temperature decreases, which can be attributed MoS 2 , a two dimensional layered transition metal dichalcogenide material of Mo atoms sandwiched between two layers of S atoms, has generated considerable interest in recent years for its unusual electronic and optical properties. [ 1,2 ] Unlike graphene, atomically thin MoS 2 is a semiconductor with a bandgap from 1.2 eV of bulk MoS 2 to 1.8 eV of monolayer MoS 2 , with a mobility in the range of 1–500 cm 2 V –1 s –1 . [ 3–5 ] Moreover, large area MoS 2 growth techniques by CVD have been developed, [ 6 ]