Low-temperature CMOS Technology for High-Performance Computing: Development and Challenges

Ran CHENG,Bo LI,Zongwei WANG,Jieyin ZHANG,Weiwei SHAN,Jianjun ZHANG,Yimao CAI,Genquan HAN
DOI: https://doi.org/10.1360/ssi-2023-0347
2024-01-01
Scientia Sinica Informationis
Abstract:Over the past 60 years,the progress of integrated circuit technology has promoted the prosperity of the information industry.As process technology pioneers sub-10 nm nodes,further performance improvement through device miniaturization encounters great challenges from both the cost and technology perspectives.It is a must to explore novel device structures,circuit design,or architecture to achieve higher computing performance.Low-temperature(LT,77 K)complementary metal oxide semiconductor(CMOS)technology,which benefits from higher device performance at lower temperatures,can be used to further increase computing speed and reduce dynamic and static power consumption.Due to the high level of compatibility with current CMOS technology,it is an ideal choice for future high-performance computing at an acceptable cost.Another scenario for the application of cryogenic or ultralow-temperature(<10 K)CMOS circuits is integration with qubits to realize large-scale quantum chips.This paper reviews the history and state-of-the-art progress in low-temperature CMOS technology,including device characterization,modeling,process design kits,applications,etc.Theoretical and technical challenges in the field are forecast and discussed.Possible solutions are also provided to guide the continuous development of low-temperature CMOS technology in China.
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