Developmental Pathways in CAVD

Elaine E. Wirrig,K. Yutzey

DOI: https://doi.org/10.5772/54356

2013-06-12

Abstract:CAVD. Recent studies have provided evidence for the involvement of specific regulatory pathways in CAVD as activators or inhibitors of disease progression.

What problem does this paper attempt to address?

Ultra-steep slope cryogenic FETs based on bilayer graphene

E. Icking,D. Emmerich,K. Watanabe,T. Taniguchi,B. Beschoten,M. C. Lemme,J. Knoch,C. Stampfer

2024-08-02

Abstract:Cryogenic field-effect transistors (FETs) offer great potential for a wide range of applications, the most notable example being classical control electronics for quantum information processors. In the latter context, on-chip FETs with low power consumption are a crucial requirement. This, in turn, requires operating voltages in the millivolt range, which are only achievable in devices with ultra-steep subthreshold slopes. However, in conventional cryogenic metal-oxide-semiconductor (MOS)FETs based on bulk material, the experimentally achieved inverse subthreshold slopes saturate around a few mV/dec due to disorder and charged defects at the MOS interface. FETs based on two-dimensional materials offer a promising alternative. Here, we show that FETs based on Bernal stacked bilayer graphene encapsulated in hexagonal boron nitride and graphite gates exhibit inverse subthreshold slopes of down to 250 ${\mu}$V/dec at 0.1 K, approaching the Boltzmann limit. This result indicates an effective suppression of band tailing in van-der-Waals heterostructures without bulk interfaces, leading to superior device performance at cryogenic temperature.

Mesoscale and Nanoscale Physics,Materials Science
Two-Dimensional Cold Electron Transport for Steep-Slope Transistors

Maomao Liu,Hemendra Nath Jaiswal,Simran Shahi,Sichen Wei,Yu Fu,Chaoran Chang,Anindita Chakravarty,Xiaochi Liu,Cheng Yang,Yanpeng Liu,Young Hee Lee,Vasili Perebeinos,Fei Yao,Huamin Li

DOI: https://doi.org/10.1021/acsnano.1c01503

IF: 17.1

2021-03-23

ACS Nano

Abstract:Room-temperature Fermi-Dirac electron thermal excitation in conventional three-dimensional (3D) or two-dimensional (2D) semiconductors generates hot electrons with a relatively long thermal tail in energy distribution. These hot electrons set a fundamental obstacle known as the "Boltzmann tyranny" that limits the subthreshold swing (SS) and therefore the minimum power consumption of 3D and 2D field-effect transistors (FETs). Here, we investigated a graphene (Gr)-enabled cold electron injection where the Gr acts as the Dirac source to provide the cold electrons with a localized electron density distribution and a short thermal tail at room temperature. These cold electrons correspond to an electronic refrigeration effect with an effective electron temperature of ∼145 K in the monolayer MoS2, which enables the transport factor lowering and thus the steep-slope switching (across for three decades with a minimum SS of 29 mV/decade at room temperature) for a monolayer MoS2 FET. Especially, a record-high sub-60-mV/decade current density (over 1 μA/μm) can be achieved compared to conventional steep-slope technologies such as tunneling FETs or negative capacitance FETs using 2D or 3D channel materials. Our work demonstrates the potential of a 2D Dirac-source cold electron transistor as a steep-slope transistor concept for future energy-efficient nanoelectronics.
Ultra-Steep-Slope High-Gain MoS2 Transistors with Atomic Threshold-Switching Gate

Jun Lin,Xiaozhang Chen,Xinpei Duan,Zhiming Yu,Wencheng Niu,Mingliang Zhang,Chang Liu,Guoli Li,Yuan Liu,Xingqiang Liu,Peng Zhou,Lei Liao

DOI: https://doi.org/10.1002/advs.202104439

IF: 15.1

2022-01-01

Advanced Science

Abstract:The fundamental Boltzmann limitation dictates the ultimate limit of subthreshold swing (SS) to be 60 mV dec-1 , which prevents the continued scaling of supply voltage. With atomically thin body, 2D semiconductors provide new possibilities for advanced low-power electronics. Herein, ultra-steep-slope MoS2 resistive-gate field-effect transistors (RG-FETs) by integrating atomic-scale-resistive filamentary with conventional MoS2 transistors, demonstrating an ultra-low SS below 1 mV dec-1 at room temperature are reported. The abrupt resistance transition of the nanoscale-resistive filamentary ensures dramatic change in gate potential, and switches the device on and off, leading to ultra-steep SS. Simultaneously, RG-FETs demonstrate a high on/off ratio of 2.76 × 107 with superior reproducibility and reliability. With the ultra-steep SS, the RG-FETs can be readily employed to construct logic inverter with an ultra-high gain ≈2000, indicating exciting potential for future low-power electronics and monolithic integration.
An all two-dimensional vertical heterostructure graphene/CuInP 2 S 6 /MoS 2 for negative capacitance field effect transistor

Adeel Liaqat,Yiheng Yin,Sabir Hussain,Wen Wen,Juanxia Wu,Yuzheng Guo,Chunhe Dang,Ching-Hwa Ho,Zheng Liu,Peng Yu,Zhihai Cheng,Liming Xie

DOI: https://doi.org/10.1088/1361-6528/ac4063

IF: 3.5

2021-12-24

Nanotechnology

Abstract:Abstract As scaling down the size of metal oxide semiconductor field-effect transistors (FETs), power dissipation has become a major challenge. Lowering down the sub-threshold swing (SS) is known as an effective technique to decrease the operating voltage of FETs and hence lower down the power consumption. However, the Boltzmann distribution of electrons (so-called ‘Boltzmann tyranny’) implements a physical limit to the SS value. Use of negative capacitance (NC) effect has enabled a new path to achieve a low SS below the Boltzmann limit (60 mV dec −1 at room temperature). In this work, we have demonstrated a NC-FET from an all two-dimensional (2D) metal ferroelectric semiconductor (MFS) vertical heterostructure: Graphene/CuInP 2 S 6 /MoS 2 . The negative capacitance from the ferroelectric CuInP 2 S 6 has enabled the breaking of the ‘Boltzmann tyranny’. The heterostructure based device has shown steep slopes switching below 60 mV dec −1 (lowest to < 10 mV dec −1 ) over 3 orders of source-drain current, which provides an avenue for all 2D material based steep slope FETs.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Ultra‐Steep‐Slope High‐Gain MoS 2 Transistors with Atomic Threshold‐Switching Gate

Jun Lin,Xiaozhang Chen,Xinpei Duan,Zhiming Yu,Wencheng Niu,Mingliang Zhang,Chang Liu,Guoli Li,Yuan Liu,Xingqiang Liu,Peng Zhou,Lei Liao

DOI: https://doi.org/10.1002/advs.202104439

IF: 15.1

2022-01-01

Advanced Science

Abstract:The fundamental Boltzmann limitation dictates the ultimate limit of subthreshold swing (SS) to be 60 mV dec-1 , which prevents the continued scaling of supply voltage. With atomically thin body, 2D semiconductors provide new possibilities for advanced low-power electronics. Herein, ultra-steep-slope MoS2 resistive-gate field-effect transistors (RG-FETs) by integrating atomic-scale-resistive filamentary with conventional MoS2 transistors, demonstrating an ultra-low SS below 1 mV dec-1 at room temperature are reported. The abrupt resistance transition of the nanoscale-resistive filamentary ensures dramatic change in gate potential, and switches the device on and off, leading to ultra-steep SS. Simultaneously, RG-FETs demonstrate a high on/off ratio of 2.76 × 107 with superior reproducibility and reliability. With the ultra-steep SS, the RG-FETs can be readily employed to construct logic inverter with an ultra-high gain ≈2000, indicating exciting potential for future low-power electronics and monolithic integration.
Systematic Study of the Incorporation of Quantum-Coupling 2-D Materials in the FET Gate/Channel Stack for Steep Subthreshold Slope

Parameswari Raju,Herwen Xu,Hao Zhu,Dimitris E. Ioannou,Qiliang Li

DOI: https://doi.org/10.1109/ted.2024.3382221

IF: 3.1

2024-04-27

IEEE Transactions on Electron Devices

Abstract:An alternative way to overcome the Boltzmann "tyranny" limit of the MOSFET subthreshold slope (SS) (60 mV/decade at room temperature) is to employ quantum coupling materials in the channel/gate-stack, in search of fast switching nanoscale devices. In this article, we explore the incorporation of a range of 2-D quantum materials in the FET gate/channel stack and find suitable combinations, which break the sub-60-mV/dec Boltzmann limit of minimum SS. We investigate the incorporation of layers of these materials in both the gate-stack and the channel, and their precise location and thickness, in order to find the parameter window of these quantum coupled devices for a steep SS. We also analyze the influence of channel strain and the doping of the "inserted" layer on the SS. We will present a brief overview based on our results of the different parameters that must be considered when designing the steep SS transistor, using the channel–gate-stack coupling concept.

engineering, electrical & electronic,physics, applied
A Planar Al-Si Schottky Barrier Metal-Oxide-Semiconductor Field Effect Transistor Operated at Cryogenic Temperatures

W. E. Purches,A. Rossi,R. Zhao,S. Kafanov,T. L. Duty,A. S. Dzurak,S. Rogge,G. C. Tettamanzi

DOI: https://doi.org/10.1063/1.4928589

IF: 4

2015-01-01

Applied Physics Letters

Abstract:Schottky Barrier (SB)-MOSFET technology offers intriguing possibilities for cryogenic nano-scale devices, such as Si quantum devices and superconducting devices. We present experimental results on a novel device architecture where the gate electrode is self-aligned with the device channel and overlaps the source and drain electrodes. This facilitates a sub-5 nm gap between the source/drain and channel, and no spacers are required. At cryogenic temperatures, such devices function as p-MOS Tunnel FETs, as determined by the Schottky barrier at the Al-Si interface, and as a further advantage, fabrication processes are compatible with both CMOS and superconducting logic technology.
Cold Source Engineering towards Sub-60mV/dec p-Type Field-effect-transistors (pFETs): Materials, Structures, and Doping Optimizations

Qianwen Wang,Pengpeng Sang,Xiaolei Ma,Fei Wang,Wei Wei,Weiqiang Zhang,Yuan Li,Jiezhi Chen

DOI: https://doi.org/10.1109/iedm13553.2020.9371895

2020-12-12

Abstract:To break the thermal limit of 60mV/dec sub-threshold swing, this work presents a comprehensive study on the strategy for designing p-type cold source FET (pCS-FET). By using first-principles simulations and quantum-transport modeling method, the source engineering of density of states that governs the CS-FET performance is investigated in terms of CS materials, heterojunction structures, and doping process. It is shown that sub-60mV/decade switching can be realized with various CS materials, including 2D metal materials, Dirac material (graphene) and n-doped semiconductors (Si, MoS2). Especially, an excellent SS of ~24 mV/dec over four decades of current can be achieved with n-doped graphene CS. More importantly, a steep slope as low as ~33mV/dec also can be achieved with a simply stacked n-doped Si as the CS.
Graphene-Integrated Negative Quantum Capacitance Field-Effect Transistor With Sub-60-mV/dec Switching

Hao Zhu,Yafen Yang,Xinyi Zhu,Parameswari Raju,Dimitris E. Ioannou,Qiliang Li

DOI: https://doi.org/10.1109/ted.2023.3294365

IF: 3.1

2023-01-01

IEEE Transactions on Electron Devices

Abstract:The aggressive scaling of metal–oxide–semiconductor field-effect transistor (MOSFET) has urged advanced device technology overcoming the 60-mV/dec limit of subthreshold slope (SS) at room temperature. The introduction of a negative component in the FET gate capacitance has been proven effective to realize steep-slope switching. Here, we report a sub-60-mV/dec MoS2 negative quantum capacitance FET (NQCFET) with single-layer (SL) graphene integrated in the gate-stack. The negative quantum capacitance from the low density of states (DOS) is strongly associated with the electron system of the 2-D SL graphene. With this negative contribution to the gate capacitance, subthermionic switching is achieved in the NQCFET with a minimum SS of 31 mV/dec. This prototype device illustrates a feasible approach to realize negative quantum capacitance in an FET architecture and opens attractive pathways for future steep-slope and low-power electronic device applications.

engineering, electrical & electronic,physics, applied
A New Opportunity for 2D van der Waals Heterostructures: Making Steep‐Slope Transistors

Juan Lyu,Jing Pei,Yuzheng Guo,Jian Gong,Huanglong Li

DOI: https://doi.org/10.1002/adma.201906000

IF: 29.4

2019-11-28

Advanced Materials

Abstract:The use of a foreign metallic cold source (CS) has recently been proposed as a promising approach toward the steep‐slope field‐effect‐transistor (FET). In addition to the selection of source material with desired density of states–energy relation (D(E)), engineering the source:channel interface for gate‐tunable channel‐barrier is crucial to CS‐FETs. However, conventional metal:semiconductor (MS) interfaces generally suffer from strong Fermi‐level pinning due to the inevitable chemical disorder and defect‐induced gap states, precluding the gate tunability of the barriers. By comprehensive materials and device modeling at the atomic scale, it is reported that 2D van der Waals (vdW) MS interfaces, with their atomic sharpness and cleanness, can be considered as general ingredients for CS‐FETs. As test cases, InSe‐based n‐type FETs are studied. It is found that graphene can be spontaneously p‐type doped along with slightly opened bandgap around the Dirac‐point by interfacing with InSe, resulting in superexponentially decaying hot carrier density with increasing n‐type channel‐barrier. Moreover, the D(E) relations suggest that 2D transition‐metal dichalcogenides and 2D transition‐metal carbides are a rich library of CS materials. Graphene, Cd3C2, T‐VTe2, H‐VTe2, and H‐TaTe2 CSs lead to subthreshold swing below 60 mV dec−1. This work broadens the application potentials of 2D vdW MS heterostructures and serves as a springboard for more studies on low‐power electronics based on 2D materials.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Steep-slope Transistors Enabled with 2D Quantum Coupling Stacks

Parameswari Raju,Hao Zhu,Yafen Yang,Kai Zhang,Dimitris Ioannou,Qiliang Li

DOI: https://doi.org/10.1088/1361-6528/ac9e5e

IF: 3.5

2023-01-01

Nanotechnology

Abstract:As down scaling of transistors continues, there is a growing interest in developing steep-slope transistors with reduced subthreshold slope (SS) below the Boltzmann limit. In this work, we successfully fabricated steep-slope MoS2transistors by incorporating a graphene layer, inserted in the gate stack. For our comprehensive study, we have applied density functional theory to simulate and calculate the change of SS effected by different 2D quantum materials, including graphene, germanene and 2D topological insulators, inserted within the gate dielectric. This theoretical study showed that graphene/MoS2devices had steep SS (27.2 mV/decade), validating our experimental approach (49.2 mV/decade). Furthermore, the simulations demonstrated very steep SS (8.6 mV/decade) in WTe2/MoS2devices. We conclude that appropriate combination of various 2D quantum materials for the gate-channel stacks, leads to steep SS and is an effective method to extend the scaling of transistors with exceptional performance.
A Steep-Slope Transistor Combining Phase-Change and Band-to-Band-Tunneling to Achieve a sub-Unity Body Factor

Wolfgang A. Vitale,Emanuele A. Casu,Arnab Biswas,Teodor Rosca,Cem Alper,Anna Krammer,Gia V. Luong,Qing-T. Zhao,Siegfried Mantl,Andreas Schüler,A. M. Ionescu

DOI: https://doi.org/10.1038/s41598-017-00359-6

IF: 4.6

2017-03-23

Scientific Reports

Abstract:Steep-slope transistors allow to scale down the supply voltage and the energy per computed bit of information as compared to conventional field-effect transistors (FETs), due to their sub-60 mV/decade subthreshold swing at room temperature. Currently pursued approaches to achieve such a subthermionic subthreshold swing consist in alternative carrier injection mechanisms, like quantum mechanical band-to-band tunneling (BTBT) in Tunnel FETs or abrupt phase-change in metal-insulator transition (MIT) devices. The strengths of the BTBT and MIT have been combined in a hybrid device architecture called phase-change tunnel FET (PC-TFET), in which the abrupt MIT in vanadium dioxide (VO2) lowers the subthreshold swing of strained-silicon nanowire TFETs. In this work, we demonstrate that the principle underlying the low swing in the PC-TFET relates to a sub-unity body factor achieved by an internal differential gate voltage amplification. We study the effect of temperature on the switching ratio and the swing of the PC-TFET, reporting values as low as 4.0 mV/decade at 25 °C, 7.8 mV/decade at 45 °C. We discuss how the unique characteristics of the PC-TFET open new perspectives, beyond FETs and other steep-slope transistors, for low power electronics, analog circuits and neuromorphic computing.

multidisciplinary sciences
Steep-Slope Transistors Based on Chiral Graphene Nanoribbons With Intrinsic Cold Source

Shizhuo Ye,Zifeng Wang,Hao Wang,Qijun Huang,Jin He,Sheng Chang

DOI: https://doi.org/10.1109/ted.2021.3087459

IF: 3.1

2021-08-01

IEEE Transactions on Electron Devices

Abstract:Steep-slope switching is effective to reduce the required energy for switching, however, at least 60 mV of gate voltage is required to modulate the current by an order of magnitude at room temperature. In this article, a numerical study of cold-source transistors based on chiral graphene nanoribbons (CGNRs) is presented. In cold-source transistors, the high-energy electrons are filtered out to break the room-temperature limitation, which can be realized by using CGNRs with narrow density of states (DOS) distribution. Our numerical results indicate that CGNR transistors can achieve sub-60 mv/decade subthreshold swing and similar ON-state current to conventional transistor. Moreover, the effect of the DOS distribution of CGNRs on the transport characteristics is investigated. This work provides a potential option for low-power electron devices and provides guidance for the design of cold-source transistors.

engineering, electrical & electronic,physics, applied
A cold-source paradigm for steep-slope transistors based on van der Waals heterojunctions

Demetrio Logoteta,Jiang Cao,Marco Pala,Philippe Dollfus,Youseung Lee,Giuseppe Iannaccone

DOI: https://doi.org/10.48550/arXiv.2010.15702

2020-10-29

Abstract:The availability of transistors capable of operating at low supply voltage is essential to improve the key performance metric of computing circuits, i.e., the number of operations per unit energy. In this paper, we propose a new device concept for energy-efficient, steep-slope transistors based on heterojunctions of 2D materials. We show that by injecting electrons from an isolated and weakly dispersive band into a strongly dispersive one, subthermionic subthreshold swings can be obtained, as a result of a cold-source effect and of a reduced thermalization of carriers. This mechanism is implemented by integrating in a MOSFET architecture two different monolayer materials coupled through a van der Waals heterojunction, combining the subthermionic behavior of tunnel field-effect transistors (FETs) with the robustness of a MOSFET architecture against performance-degrading factors, such as traps, band tails and roughness. A further advantage with respect to tunnel FETs is that only an n-type or p-type doping is required to fabricate the device. In order to demonstrate the device concept and to discuss the underlying physics and the design options, we study through abinitio and full-quantum transport simulations a possible implementation that exploits two recently reported 2D materials.

Mesoscale and Nanoscale Physics
Intrinsic subthermionic capabilities and high performance of easy-to-fabricate monolayer metal dihalide MOSFETs

Demetrio Logoteta,Jiang Cao,Marco Pala,Paolo Marconcini,Giuseppe Iannaccone

DOI: https://doi.org/10.48550/arXiv.2106.12077

2021-06-22

Mesoscale and Nanoscale Physics

Abstract:We investigate the design of steep-slope metal-oxide-semiconductor field-effect transistors (MOSFETs) exploiting monolayers of transition metal dihalides as channel materials. With respect to other previously proposed steep-slope transistors, these devices require simplified manufacturing processes, as no confinement of the 2D material is needed, nor any tunneling heterojunction or ferroelectric gate insulators, and only n- or p-type contacts are demanded. We demonstrate their operation by studying an implementation based on monolayer CrI$_2$ through quantum transport simulations. We show that the subthermionic capabilities of the device originate from a cold-source effect, intrinsically driven by the shape of the band structure of the 2D material and robust against the effects of thermalization induced by the electron-phonon interactions. Due to the absence of a tunneling barrier when the device is switched on, current levels can be achieved that are typically out of reach for tunnel FETs. The device also exhibits excellent scaling properties, maintaining a subthermionic subthreshold swing (SS) up to channel lengths as short as 5 nm.
A new opportunity for two-dimensional van der Waals heterostructures: making steep-slope transistors

Juan Lv,Jing Pei,Yuzheng Guo,Jian Gong,Huanglong Li

DOI: https://doi.org/10.1002/adma.201906000

2019-08-26

Abstract:The use of a foreign metallic cold source (CS) has recently been proposed as a promising approach toward the steep-slope field-effect-transistor (FET). In addition to the selection of source material with desired density of states-energy relation (D(E)), engineering the source: channel interface for gate-tunable channel-barrier is crucial to a CS-FET. However, conventional metal: semiconductor (MS)-interfaces generally suffer from strong Fermi-level-pinning due to the inevitable chemical disorder and defect-induced gap states, precluding the gate-tunability of the barriers. By comprehensive materials and device modeling at the atomic-scale, we report that the two-dimensional (2D)-van der Waals (vdW)-MS-interfaces, with their atomic sharpness and cleanness, can be considered as general ingredients for CS-FETs. As test cases, InSe-based n-type FETs are studied. It is found that graphene can be spontaneously p-type doped along with slightly opened bandgap around the Dirac-point by interfacing with InSe, resulting in super-exponentially decaying hot carrier density with increasing n-type channel-barrier. Moreover, the D(E) relations suggest that 2D-transition-metal-dichalcogenides and 2D-transition-metal-carbides are rich libraries of CS materials. Both graphene and H-TaTe2 CSs lead to subthreshold swing below 60 mV/decade. This work broadens the application potentials of 2D-vdW-MS-heterostructures and serves as a springboard for more studies on low-power electronics based on 2D materials.

Materials Science
Drain-engineered Carbon-Nanotube-film Field-Effect Transistors with High Performance and Ultra-Low Current Leakage

Lijun Liu,Chenyi Zhao,Li Ding,Lianmao Peng,Zhiyong Zhang

DOI: https://doi.org/10.1007/s12274-019-2558-6

IF: 9.9

2019-01-01

Nano Research

Abstract:A small bandgap and light carrier effective mass ( m 0 ) lead to obvious ambipolar transport behavior in carbon nanotube (CNT) field-effect transistors (FETs), including a high off-state current and severe degradation of the subthreshold swing (SS) with increasing drain bias voltage. We demonstrate a drain-engineered method to cope with this common problem in CNT-film FETs with a sub-µm channel length, i.e., suppressing the ambipolar behavior while maintaining high on-state performance by adopting a feedback gate (FBG) structure to extend the drain region from the CNT/metal contact to the proximate CNT channels to suppress the tunneling current. Sub-400-nm-channel-length FETs with a FBG structure statistically present a high on/off ratio of up to 10 4 and a sub-200 mV/dec SS under a high drain bias of up to −2 V while maintaining a high on-state current of 0.2 mA/µm or a peak transconductance of 0.2 mS/µm. By lowering the supply voltage to 1.5 V, FBG CNT-film FETs can meet the requirement of standard-performance ultra large scale integrated circuits (ULSICs). Therefore, the introduction of the drain engineering structure enables applications of CNT-film-based FETs in ULSICs and could also be widely extended to other small-bandgap semiconductor-based FETs for an improvement in their off-state property.
Novel Field-Effect Schottky Barrier Transistors Based on Graphene-MoS2 Heterojunctions

He Tian,Zhen Tan,Can Wu,Xiaomu Wang,Mohammad Ali Mohammad,Dan Xie,Yi Yang,Jing Wang,Lain-Jong Li,Jun Xu,Tian-Ling Ren

DOI: https://doi.org/10.1038/srep05951

IF: 4.6

2014-01-01

Scientific Reports

Abstract:Recently, two-dimensional materials such as molybdenum disulphide (MoS 2 ) have been demonstrated to realize field effect transistors (FET) with a large current on-off ratio. However, the carrier mobility in backgate MoS 2 FET is rather low (typically 0.5–20 cm 2 /V·s). Here, we report a novel field-effect Schottky barrier transistors (FESBT) based on graphene-MoS 2 heterojunction (GMH), where the characteristics of high mobility from graphene and high on-off ratio from MoS 2 are properly balanced in the novel transistors. Large modulation on the device current (on/off ratio of 10 5 ) is achieved by adjusting the backgate (through 300 nm SiO 2 ) voltage to modulate the graphene-MoS 2 Schottky barrier. Moreover, the field effective mobility of the FESBT is up to 58.7 cm 2 /V·s. Our theoretical analysis shows that if the thickness of oxide is further reduced, a subthreshold swing (SS) of 40 mV/decade can be maintained within three orders of drain current at room temperature. This provides an opportunity to overcome the limitation of 60 mV/decade for conventional CMOS devices. The FESBT implemented with a high on-off ratio, a relatively high mobility and a low subthreshold promises low-voltage and low-power applications for future electronics.
Kidney and electrolyte disturbances in neoplastic diseases.

R. Glassock,R. Friedler,S. Massry

DOI: https://doi.org/10.1159/000400113

Contributions to Nephrology

Abstract:
High-performance monolayer MoS2 field-effect transistor with large-scale nitrogen-doped graphene electrodes for Ohmic contact

Dongjea Seo,Dong Yun Lee,Junyoung Kwon,Jea Jung Lee,Takashi Taniguchi,Kenji Watanabe,Gwan-Hyoung Lee,Keun Soo Kim,James Hone,Young Duck Kim,Heon-Jin Choi

DOI: https://doi.org/10.1063/1.5094682

2019-07-18

Abstract:A finite Schottky barrier and large contact resistance between monolayer MoS2 and electrodes are the major bottlenecks in developing high-performance field-effect transistors (FETs) that hinder the study of intrinsic quantum behaviors such as valley-spin transport at low temperature. A gate-tunable graphene electrode platform has been developed to improve the performance of MoS2 FETs. However, intrinsic misalignment between the work function of pristine graphene and the conduction band of MoS2 results in a large threshold voltage for the FETs, because of which Ohmic contact behaviors are observed only at very high gate voltages and carrier concentrations (~1013 cm-2). Here, we present high-performance monolayer MoS2 FETs with Ohmic contact at a modest gate voltage by using a chemical-vapor-deposited (CVD) nitrogen-doped graphene with a high intrinsic electron carrier density. The CVD nitrogen-doped graphene and monolayer MoS2 hybrid FETs platform exhibited a large negative shifted threshold voltage of -54.2 V and barrier-free Ohmic contact under zero gate voltage. Transparent contact by nitrogen-doped graphene led to a 214% enhancement in the on-current and a four-fold improvement in the field-effect carrier mobility of monolayer MoS2 FETs compared with those of a pristine graphene electrode platform. The transport measurements, as well as Raman and X-ray photoelectron spectroscopy analyses before and after thermal annealing, reveal that the atomic C-N bonding in the CVD nitrogen-doped graphene is responsible for the dominant effects of electron doping. Large-scale nitrogen-doped graphene electrodes provide a promising device platform for the development of high-performance devices and the study of unique quantum behaviors.

Materials Science

Developmental Pathways in CAVD

Ultra-steep slope cryogenic FETs based on bilayer graphene

Two-Dimensional Cold Electron Transport for Steep-Slope Transistors

Ultra-Steep-Slope High-Gain MoS2 Transistors with Atomic Threshold-Switching Gate

An all two-dimensional vertical heterostructure graphene/CuInP 2 S 6 /MoS 2 for negative capacitance field effect transistor

Ultra‐Steep‐Slope High‐Gain MoS <sub>2</sub> Transistors with Atomic Threshold‐Switching Gate

Systematic Study of the Incorporation of Quantum-Coupling 2-D Materials in the FET Gate/Channel Stack for Steep Subthreshold Slope

A Planar Al-Si Schottky Barrier Metal-Oxide-Semiconductor Field Effect Transistor Operated at Cryogenic Temperatures

Cold Source Engineering towards Sub-60mV/dec p-Type Field-effect-transistors (pFETs): Materials, Structures, and Doping Optimizations

Graphene-Integrated Negative Quantum Capacitance Field-Effect Transistor With Sub-60-mV/dec Switching

A New Opportunity for 2D van der Waals Heterostructures: Making Steep‐Slope Transistors

Steep-slope Transistors Enabled with 2D Quantum Coupling Stacks

A Steep-Slope Transistor Combining Phase-Change and Band-to-Band-Tunneling to Achieve a sub-Unity Body Factor

Steep-Slope Transistors Based on Chiral Graphene Nanoribbons With Intrinsic Cold Source

A cold-source paradigm for steep-slope transistors based on van der Waals heterojunctions

Intrinsic subthermionic capabilities and high performance of easy-to-fabricate monolayer metal dihalide MOSFETs

A new opportunity for two-dimensional van der Waals heterostructures: making steep-slope transistors

Drain-engineered Carbon-Nanotube-film Field-Effect Transistors with High Performance and Ultra-Low Current Leakage

Novel Field-Effect Schottky Barrier Transistors Based on Graphene-MoS2 Heterojunctions

Kidney and electrolyte disturbances in neoplastic diseases.

High-performance monolayer MoS2 field-effect transistor with large-scale nitrogen-doped graphene electrodes for Ohmic contact