Kidney and electrolyte disturbances in neoplastic diseases.

R. Glassock,R. Friedler,S. Massry

DOI: https://doi.org/10.1159/000400113

Contributions to Nephrology

Abstract:

What problem does this paper attempt to address?

Applying the Wake-Up-like Effect to Enhance the Capabilities of Two-Dimensional Ferroelectric Field-Effect Transistors.

Jie Cheng,Jun-Hui Yuan,Pei Yue Li,Jiafu Wang,Yuan Wang,You Wei Zhang,Yu Zheng,Pan Zhang

DOI: https://doi.org/10.1021/acsami.4c06177

IF: 9.5

2024-01-01

ACS Applied Materials & Interfaces

Abstract:For traditional ferroelectric field-effect transistors (FeFETs), enhancing the polarization domain of bulk ferroelectric materials is essential to improve device performance. However, there has been limited investigation into the enhancement of polarization field in two-dimensional (2D) ferroelectric material such as CuInP2S6 (CIPS). In this study, similar to bulk ferroelectric materials, CIPS exhibited enhanced polarization field upon application of external cyclic voltage. Moreover, unlike traditional ferroelectric materials, the polarization enhancement of CIPS is not due to redistribution of the defect but rather originates from a mechanism: the long-distance migration of Cu ions. We termed this mechanism the "wake-up-like effect". After incorporating the wake-up-like effect into the graphene/CIPS/WSe2 FeFET device, we successfully increased the hysteresis window and enhanced the current on/off ratio by 4 orders of magnitude. Moreover, the FeFET yielded remarkable achievements, such as multilevel nonvolatile memory with 21 distinct conductance levels, a high on/off ratio exceeding 106, a long retention time exceeding 103 s, and neuromorphic computing with 93% accuracy at recognizing handwritten digits. Introducing the wake-up-like effect to 2D CIPS may pave the way for innovative approaches to achieve advanced multilevel nonvolatile memory and neuromorphic computing capabilities for next-generation micro-nanoelectronic devices.
Apocrine hidrocystoma of the shoulder.

B. Benisch,B. Peison

DOI: https://doi.org/10.1001/ARCHDERM.1977.01640010073013

Archives of Dermatology

Abstract:An apocrine hidrocystoma of the shoulder of a 59-year-old woman is, to our knowledge, only the third reported case that arose outside of the head and genitalia. Its origin was nonetheless consistent with the distribution of apocrine glands in adults.
Ferroelectricity and Piezoelectricity in 2D Van der Waals CuInP2S6 Ferroelectric Tunnel Junctions

Tingting Jia,Yanrong Chen,Yali Cai,Wenbin Dai,Chong Zhang,Liang Yu,Wenfeng Yue,Hideo Kimura,Yingbang Yao,Shuhui Yu,Quansheng Guo,Zhenxiang Cheng

DOI: https://doi.org/10.3390/nano12152516

IF: 5.3

2022-07-22

Nanomaterials

Abstract:CuInP2S6 (CIPS) is a novel two-dimensional (2D) van der Waals (vdW) ferroelectric layered material with a Curie temperature of TC~315 K, making it promising for great potential applications in electronic and photoelectric devices. Herein, the ferroelectric and electric properties of CIPS at different thicknesses are carefully evaluated by scanning probe microscopy techniques. Some defects in some local regions due to Cu deficiency lead to a CuInP2S6–In4/3P2S6 (CIPS–IPS) paraelectric phase coexisting with the CIPS ferroelectric phase. An electrochemical strain microscopy (ESM) study reveals that the relaxation times corresponding to the Cu ions and the IPS ionospheres are not the same, with a significant difference in their response to DC voltage, related to the rectification effect of the ferroelectric tunnel junction (FTJ). The electric properties of the FTJ indicate Cu+ ion migration and propose that the current flow and device performance are dynamically controlled by an interfacial Schottky barrier. The addition of the ferroelectricity of CIPS opens up applications in memories and sensors, actuators, and even spin-orbit devices based on 2D vdW heterostructures.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
Flexoelectric Engineering of Van Der Waals Ferroelectric CuInP2S6.

Wenjie Ming,Boyuan Huang,Sizheng Zheng,Yinxin Bai,Junling Wang,Jie Wang,Jiangyu Li

DOI: https://doi.org/10.1126/sciadv.abq1232

IF: 13.6

2022-01-01

Science Advances

Abstract:Van der Waals layered CuInP2S6 (CIPS) is an ideal candidate for developing two-dimensional microelectronic heterostructures because of its room temperature ferroelectricity, although field-driven polarization reversal of CIPS is intimately coupled with ionic migration, often causing erratic and damaging switching that is highly undesirable for device applications. In this work, we develop an alternative switching mechanism for CIPS using flexoelectric effect, abandoning external electric fields altogether, and the method is motivated by strong correlation between polarization and topography variation of CIPS. Phase-field simulation identifies a critical radius of curvature around 5 μm for strain gradient to be effective, which is realized by engineered topographic surfaces using silver nanowires and optic grating upon which CIPS is transferred to. We also demonstrate mechanical modulation of CIPS on demand via strain gradient underneath a scanning probe, making it possible to engineer multiple polarization states of CIPS for device applications.
2D Ferroionics: Conductive Switching Mechanisms and Transition Boundaries in Van Der Waals Layered Material CuInP2 S6.

Jiachao Zhou,Anzhe Chen,Yishu Zhang,Dong Pu,Baoshi Qiao,Jiayang Hu,Hanxi Li,Shuai Zhong,Rong Zhao,Fei Xue,Yang Xu,Kian Ping Loh,Hua Wang,Bin Yu

DOI: https://doi.org/10.1002/adma.202302419

IF: 29.4

2023-01-01

Advanced Materials

Abstract:The recently unfolded ferroionic phenomena in 2D van der Waals (vdW) copper-indium-thiophosphate (CuInP2 S6 or CIPS) have received widespread interest as they allow for dynamic control of conductive switching properties, which are appealing in the paradigm-shift computing. The intricate couplings between ferroelectric polarization and ionic conduction in 2D vdW CIPS facilitate the manipulation and dynamic control of conductive behaviors. However, the complex interplays and underlying mechanisms are not yet fully explored and understood. Here, by investigating polarization switching and ionic conduction in the temperature and applied electric field domains, it is discovered that the conducting mechanisms of CIPS can be divided into four distinctive states (or modes) with transitional boundaries, depending on the dynamics of Cu ions in the material. Further, it demonstrates that dynamically-tunable synaptic responsive behavior can be well implemented by governing the working-state transition. This research provides an in-depth, quantitative understanding of the complex phenomena of conductive switching in 2D vdW CIPS with coexisting ferroelectric order and ionic disorder. The developed insights in this work lay the ground for implementing high-performance, function-enriched devices for information processing, data storage, and neuromorphic computing based on the 2D ferroionic material systems.
Two‐Dimensional Ferroionics: Conductive Switching Mechanisms And Transition Boundaries in Van Der Waals Layered Material CuInP2S6

Jiachao Zhou,Anzhe Chen,Yishu Zhang,Dong Pu,Baoshi Qiao,Jiayang Hu,Hanxi Li,Shuai Zhong,Rong Zhao,Fei Xue,Yang Xu,Kian Ping Loh,Hua Wang,Bin Yu

DOI: https://doi.org/10.1002/adma.202302419

IF: 29.4

2023-06-24

Advanced Materials

Abstract:The recently unfolded ferroionic phenomena in two‐dimensional (2D) van der Waals (vdW) copper‐indium‐thiophosphate (CuInP2S6 or CIPS) have received widespread interest as they allow for dynamic control of conductive switching properties, which are appealing in the paradigm‐shift computing. The intricate couplings between ferroelectric polarization and ionic conduction in 2D vdW CIPS facilitate the manipulation and dynamic control of conductive behaviors. However, the complex interplays and underlying mechanisms are not yet fully explored and understood. Here, by investigating polarization switching and ionic conduction in the temperature and applied electric field domains, we discover that the conducting mechanisms of CIPS can be divided into four distinctive states (or modes) with transitional boundaries, depending on the dynamics of Cu ions in the material. Further, we demonstrate that dynamically‐tunable synaptic responsive behavior can be well implemented by governing the working‐state transition. Our research provides an in‐depth, quantitative understanding of the complex phenomena of conductive switching in 2D vdW CIPS with coexisting ferroelectric order and ionic disorder. The developed insights in this work lay the ground for implementing high‐performance, function‐enriched devices for information processing, data storage, and neuromorphic computing based on the 2D ferroionic material systems. This article is protected by copyright. All rights reserved

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Switchable Metal-to-half-metal Transition at the Semi-Hydrogenated Graphene/ferroelectric Interface.

Yajun Zhang,Xu He,Minglei Sun,Jie Wang,Philippe Ghosez

DOI: https://doi.org/10.1039/c9nr08627g

IF: 6.7

2020-01-01

Nanoscale

Abstract:Tuning the half-metallicity of low-dimensional materials using an electric field is particularly appealing for spintronic applications but typically requires an ultra-high field, hampering practical applications. Interface engineering has been suggested as an alternative practical means to overcome this limitation and control the metal-to-half-metal transition. Here, we show from first-principles calculations that the polarization switching at the interface of semi-hydrogenated graphene (i.e., graphone) and a ferroelectric PbTiO3 layer can reversibly tune a metal to half-metal transition in graphone. Using a simple Hubbard model, this is rationalized using interface atomic orbital hybridization, which also reveals the origin of the high-quality screening of metallic graphone, preserving bulk-like stable ferroelectric polarization in the PbTiO3 film down to a thickness of two unit cells. These findings do not only open a new perspective on engineering half-metallicity at the interface of two-dimensional materials and ferroelectrics, but also identify graphone as a powerful atomically thin electrode, which holds great promise for the design of ultrafast and high integration density information-storage devices.
Low-Thermal-Budget Ferroelectric Field-Effect Transistors Based on CuInP2S6 and InZnO

Hojoon Ryu,Junzhe Kang,Minseong Park,Byungjoon Bae,Zijing Zhao,Shaloo Rakheja,Kyusang Lee,Wenjuan Zhu

2023-07-20

Abstract:In this paper, we demonstrate low-thermal-budget ferroelectric field-effect transistors (FeFETs) based on two-dimensional ferroelectric CuInP2S6 (CIPS) and oxide semiconductor InZnO (IZO). The CIPS/IZO FeFETs exhibit non-volatile memory windows of ~1 V, low off-state drain currents, and high carrier mobilities. The ferroelectric CIPS layer serves a dual purpose by providing electrostatic doping in IZO and acting as a passivation layer for the IZO channel. We also investigate the CIPS/IZO FeFETs as artificial synaptic devices for neural networks. The CIPS/IZO synapse demonstrates a sizeable dynamic ratio (125) and maintains stable multi-level states. Neural networks based on CIPS/IZO FeFETs achieve an accuracy rate of over 80% in recognizing MNIST handwritten digits. These ferroelectric transistors can be vertically stacked on silicon CMOS with a low thermal budget, offering broad applications in CMOS+X technologies and energy-efficient 3D neural networks.

Mesoscale and Nanoscale Physics
Robust Threshold-Switching Behavior Assisted by Cu Migration in a Ferroionic CuInP2S6 Heterostructure

Zhipeng Zhong,Shuaiqin Wu,Xiang Li,Zhiqiang Wang,Qianyi Yang,Bangchi Huang,Yan Chen,Xudong Wang,Tie Lin,Hong Shen,Xiangjian Meng,Ming Wang,Wu Shi,Jianlu Wang,Junhao Chu,Hai Huang

DOI: https://doi.org/10.1021/acsnano.3c02406

IF: 17.1

2023-01-01

ACS Nano

Abstract:The two-dimensional layered material CuInP2S6 (CIPS) has attracted significant research attention due to its nontrivial physical properties, including room-temperature ferroelectricity at the ultrathin limit and substantial ionic conductivity. Despite many efforts to control its ionic conductance and develop electronic devices, such as memristors, improving the stability of these devices remains a challenge. This work presents a highly stable threshold-switching device based on the Cu/CIPS/graphene heterostructure, achieved after a comprehensive investigation of the activation of Cu's ionic conductivity. The device exhibits exceptional threshold-switching performance, including good cycling endurance, a high on/off ratio of up to 104, low operation voltages, and an ultrasmall subthreshold swing of less than 1.8 mV/decade for the resistance-switching process. Through temperature-dependent electrical and Raman spectroscopy measurements, the stable resistive-switching mechanism is interpreted with a drifting and diffusion model of Cu ions under the electric field, rather than the conventional conducting filament mechanism. These results make the layered ferroionic CIPS material a promising candidate for information storage devices, demonstrating a compelling approach to achieving high-performance threshold-switching memristor devices.
Multistate Ferroelectric Diodes with High Electroresistance Based on van der Waals Heterostructures

Soumya Sarkar,Zirun Han,Maheera Abdul Ghani,Nives Strkalj,Jung Ho Kim,Yan Wang,Deep Jariwala,Manish Chhowalla

DOI: https://doi.org/10.1021/acs.nanolett.4c03360

IF: 10.8

2024-10-10

Nano Letters

Abstract:Some van der Waals (vdW) materials exhibit ferroelectricity, making them promising for novel nonvolatile memories (NVMs) such as ferroelectric diodes (FeDs). CuInP(2)S(6) (CIPS) is a well-known vdW ferroelectric that has been integrated with graphene for memory devices. Here we demonstrate FeDs with self-rectifying, hysteretic current-voltage characteristics based on vertical heterostructures of 10 nm thick CIPS and graphene. By using vdW indium-cobalt top electrodes and graphene bottom...

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Ferroelectric Field‐Effect‐Transistor Integrated with Ferroelectrics Heterostructure

Sungpyo Baek,Hyun Ho Yoo,Jae Hyeok Ju,Panithan Sriboriboon,Prashant Singh,Jingjie Niu,Jin‐Hong Park,Changhwan Shin,Yunseok Kim,Sungjoo Lee

DOI: https://doi.org/10.1002/advs.202200566

IF: 15.1

2022-05-18

Advanced Science

Abstract:The authors report on the fabrication and application of a ferroelectric transistor integrated with a van der Waals ferroelectrics heterostructure (CuInP2S6/α‐In2Se3). Leveraging enhanced polarization originating from the dipole coupling, the fabricated device exhibits a large memory window and nonvolatile memory characteristics with long retention time and stable cyclic endurance, providing a promising pathway for exploring low‐dimensional ferroelectronics. To address the demands of emerging data‐centric computing applications, ferroelectric field‐effect transistors (Fe‐FETs) are considered the forefront of semiconductor electronics owing to their energy and area efficiency and merged logic–memory functionalities. Herein, the fabrication and application of an Fe‐FET, which is integrated with a van der Waals ferroelectrics heterostructure (CuInP2S6/α‐In2Se3), is reported. Leveraging enhanced polarization originating from the dipole coupling of CIPS and α‐In2Se3, the fabricated Fe‐FET exhibits a large memory window of 14.5 V at VGS = ±10 V, reaching a memory window to sweep range of ≈72%. Piezoelectric force microscopy measurements confirm the enhanced polarization‐induced wider hysteresis loop of the double‐stacked ferroelectrics compared to single ferroelectric layers. The Landau–Khalatnikov theory is extended to analyze the ferroelectric characteristics of a ferroelectric heterostructure, providing detailed explanations of the hysteresis behaviors and enhanced memory window formation. The fabricated Fe‐FET shows nonvolatile memory characteristics, with a high on/off current ratio of over 106, long retention time (>104 s), and stable cyclic endurance (>104 cycles). Furthermore, the applicability of the ferroelectrics heterostructure is investigated for artificial synapses and for hardware neural networks through training and inference simulation. These results provide a promising pathway for exploring low‐dimensional ferroelectronics.

materials science, multidisciplinary,nanoscience & nanotechnology,chemistry
All-2D CVD-grown semiconductor field-effect transistors with van der Waals graphene contacts

Md. Anamul Hoque,Antony George,Vasudev Ramachandra,Emad Najafidehaghani,Ziyang Gan,Richa Mitra,Bing Zhao,Satyaprakash Sahoo,Maria Abrahamsson,Qiuhua Liang,Julia Wiktor,Andrey Turchanin,Sergey Kubatkin,Samuel Lara-Avila,Saroj P. Dash

DOI: https://doi.org/10.1038/s41699-024-00489-2

IF: 10.516

2024-08-23

npj 2D Materials and Applications

Abstract:Two-dimensional (2D) semiconductors and van der Waals (vdW) heterostructures with graphene have generated enormous interest for future electronic, optoelectronic, and energy-harvesting applications. The electronic transport properties and correlations of such hybrid devices strongly depend on the quality of the materials via chemical vapor deposition (CVD) process, their interfaces and contact properties. However, detailed electronic transport and correlation properties of the 2D semiconductor field-effect transistor (FET) with vdW graphene contacts for understanding mobility limiting factors and metal-insulator transition properties are not explored. Here, we investigate electronic transport in scalable all-2D CVD-grown molybdenum disulfide (MoS 2 ) FET with graphene contacts. The Fermi level of graphene can be readily tuned by a gate voltage to enable a nearly perfect band alignment and, hence, a reduced and tunable Schottky barrier at the contact with good field-effect channel mobility. Detailed temperature-dependent transport measurements show dominant phonon/impurity scattering as a mobility limiting mechanisms and a gate-and bias-induced metal-insulator transition in different temperature ranges, which is explained in light of the variable-range hopping transport. These studies in such scalable all-2D semiconductor heterostructure FETs will be useful for future electronic and optoelectronic devices for a broad range of applications.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Interfacial Electronic Properties and Adjustable Schottky Barrier at Graphene/CsPbI3 Van Der Waals Heterostructures

Helin Qin,Jun Wang,Donghui Guo,Dingyong Zhong

DOI: https://doi.org/10.1002/pssr.202000555

2021-01-01

Abstract:2D materials have attracted much attention for applications in halide perovskite optoelectronic devices due to their high carrier mobility and adjustable work function. Heterogeneous stacking of halide perovskites with 2D materials to form heterostructures is an effective way to improve the performance of perovskite photovoltaic and optoelectronic devices. Herein, the investigation of the interfacial interactions and electronic properties of graphene/CsPbI3 heterostructures with two types of exposed surfaces of CsPbI3 by first‐principles calculations is reported. The calculated results show that the intrinsic electronic properties of isolated graphene and the CsPbI3 slabs are well preserved in the heterostructures, and the interaction between the heterostructures is a weak van der Waals (vdW) interaction. The Schottky barriers are built in the vdW heterostructures with the optimized layer‐to‐layer distance. The barrier height can be tuned by doping graphene with boron and nitrogen atoms and by applying an external electric field. This work provides useful information for designing next‐generation electronic devices based on graphene/CsPbI3 vdW heterostructures.
Theoretical study of metal contacts to the monolayer ferroelectric material CuInP2S6 and its device applications

Jialong Qi,Huizhen Han,Shuli Yang,Lili Kang,Huabing Yin,Gaofeng Zhao

DOI: https://doi.org/10.1063/5.0219253

IF: 4

2024-07-22

Applied Physics Letters

Abstract:Two-dimensional (2D) ferroelectric materials exhibit significant potential for applications in nonvolatile memory and device miniaturization. In the device design stage, it is essential to consider the compatibility between 2D ferroelectric materials and three-dimensional (3D) metal. However, the interface between them introduces complex interactions that could impact the device's performance. In this work, based on the first-principles method, we simulate several 3D metal–2D ferroelectric material contact systems by utilizing different 3D metals in contact with the 2D ferroelectric monolayer CuInP2S6 (CIPS). By calculating the electronic structures of the systems, we find that the Cd(001)–CIPS configuration is the most stable structure, followed by the Ag(111)–CIPS and Au(111)–CIPS systems. Both the Cd(001)–CIPS and Ag(111)–CIPS systems undergo a transition from Schottky to Ohmic contact. Finally, we theoretically design a ferroelectric tunnel junction (FTJ) based on the Cd(001)–CIPS contact system, achieving a tunneling electroresistance ratio of 2.394×105% and a remarkably low resistance–area product of 0.78 Ω·μm2, which makes the proposed FTJ superior to the conventional 3D FTJ. This work provides some insights for the design of nonvolatile storage devices.

physics, applied
Comprehensive Study of Electrode Effect in Metal/CuInP2S6/Metal Heterostructures

Yong Dong,Chao An,Yongyi Wu,Zhen Zhang,Tao Li,Tai Min,Jinbo Yang,Xuegang Chen,Mingliang Tian

DOI: https://doi.org/10.3390/sym15050966

2023-01-01

Symmetry

Abstract:The layered van der Waals CuInP2S6 (CIPS) features interesting functional behaviors, including reversible ferroelectric polarization, Cu ion migration, negative capacitance effect, etc. Here, the CIPS flakes were exfoliated from the CVT-grown high-quality single crystals, which were fabricated into metal/CIPS/metal heterostructures by conventional photolithography. It was found that the CIPS flakes persisted in the dominant out-of-plane polarization and the minor in-plane polarization. Clear hysteresis current–voltage (I–V) loops, as well as the rectifying character, were revealed in metal/CIPS/metal heterostructures, indicating the potential application as a memory device. Additionally, the different metal electrode could significantly modulate the Schottky-like barrier at metal/CIPS interfaces, resulting in symmetric or asymmetric I–V loops. The complicated I–V curves may have originated from the voltage-induced Cu ion migration, reversible ferroelectric polarization, and carrier (ion) trapping/detrapping. This work may facilitate the metal electrode selection for the ferroelectric CIPS-based device application.
An all two-dimensional vertical heterostructure graphene/CuInP 2 S 6 /MoS 2 for negative capacitance field effect transistor

Adeel Liaqat,Yiheng Yin,Sabir Hussain,Wen Wen,Juanxia Wu,Yuzheng Guo,Chunhe Dang,Ching-Hwa Ho,Zheng Liu,Peng Yu,Zhihai Cheng,Liming Xie

DOI: https://doi.org/10.1088/1361-6528/ac4063

IF: 3.5

2021-12-24

Nanotechnology

Abstract:Abstract As scaling down the size of metal oxide semiconductor field-effect transistors (FETs), power dissipation has become a major challenge. Lowering down the sub-threshold swing (SS) is known as an effective technique to decrease the operating voltage of FETs and hence lower down the power consumption. However, the Boltzmann distribution of electrons (so-called ‘Boltzmann tyranny’) implements a physical limit to the SS value. Use of negative capacitance (NC) effect has enabled a new path to achieve a low SS below the Boltzmann limit (60 mV dec −1 at room temperature). In this work, we have demonstrated a NC-FET from an all two-dimensional (2D) metal ferroelectric semiconductor (MFS) vertical heterostructure: Graphene/CuInP 2 S 6 /MoS 2 . The negative capacitance from the ferroelectric CuInP 2 S 6 has enabled the breaking of the ‘Boltzmann tyranny’. The heterostructure based device has shown steep slopes switching below 60 mV dec −1 (lowest to < 10 mV dec −1 ) over 3 orders of source-drain current, which provides an avenue for all 2D material based steep slope FETs.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Interfacial Polarization Control Engineering and Ferroelectric PZT/Graphene Heterostructure Integrated Application

Kaixi Bi,Shuqi Han,Jialiang Chen,Xiaoxue Bi,Xiangyu Yang,Liya Niu,Linyu Mei

DOI: https://doi.org/10.3390/nano14050432

2024-02-27

Abstract:Integration and miniaturization are the inevitable trends in the development of electronic devices. PZT and graphene are typical ferroelectric and carbon-based materials, respectively, which have been widely used in various fields. Achieving high-quality PZT/graphene heterogeneous integration and systematically studying its electrical properties is of great significance. In this work, we reported the characterization of a PZT film based on the sol-gel method. Additionally, the thickness of the PZT film was pushed to the limit size (~100 nm) by optimizing the process. The test results, including the remnant and leakage current, show that the PZT film is a reliable and suitable platform for further graphene-integrated applications. The non-destructive regulation of the electrical properties of graphene has been studied based on a domain-polarized substrate and strain-polarized substrate. The domain structures in the PZT film exhibit different geometric structures with ~0.3 V surface potential. The I-V output curves of graphene integrated on the surface of the PZT film exhibited obvious rectification characteristics because of p/n-doping tuned by an interfacial polarized electric field. In contrast, a ~100 nm thick PZT film makes it easy to acquire a larger strain gradient for flexural potential. The tested results also show a rectification phenomenon, which is similar to domain polarization substrate regulation. Considering the difficulty of measuring the flexural potential, the work might provide a new approach to assessing the flexural polarized regulation effect. A thinner ferroelectric film/graphene heterojunction and the polarized regulation of graphene will provide a platform for promoting low-dimension film-integrated applications.
Ferroelectricity-enhanced potassium-ion storage in van der Waals layered CuInP2S6

Po-Wen Chien,Yu-Bo Hung,Yi-Chun Yang,Hsing-Yu Tuan

DOI: https://doi.org/10.1039/d4ta05014b

IF: 11.9

2024-10-01

Journal of Materials Chemistry A

Abstract:We integrate ferroelectric principles into two-dimensional van der Waals materials to enhance both charge and potassium ion (K+) transport at the electrode interface. CuInP2S6 (CIPS) has a distinct room-temperature ferroelectric field effect due to the unique ordering of Cu and In ions in the CIPS lattice, which disrupts its centrosymmetry and causes significant spontaneous polarizations. Its natural dipole moment creates a persistent polarizing electric field, facilitating fast carrier transfer from the material's bulk to its surface, boosting ionic conductivity under high electric fields. Utilizing the synergistic effects, layered CIPS coupled with graphene (CIPS@G) exhibits the high specific capacity, superior long cycling stability and outstanding rate performance. The CIPS@G composite in potassium-ion battery (PIB) offers a reversible capacity of 565 mA h g-1 at 50 mA g-1, robust stability over 1000 cycles, and high rate performance (10 A g-1), and a cycle life exceeding 400 cycles was also provided while assembled in a full battery. In hybrid capacitors, CIPS@G stands out with superior rate performance up to 2.0 A g-1 and high energy density (40 W h kg-1) at 2.0 A g-1, surpassing other PIB phosphide and sulfide anodes reported to date. These results show that high-rate nanochannels between two-dimensional (2D) CIPS nanosheets and graphene, paired with CIPS's ferroelectric polarization, improve electronic conductivity, support K+ diffusion, relieve CIPS aggregation, and buffer volume changes. The study on enhancing K+ performance in 2D materials through the integration of ferroelectric field principles holds promise for pioneering advancements in electrochemical systems.

materials science, multidisciplinary,chemistry, physical,energy & fuels
Comprehensive Study of Electrode Effect in Metal/CuInP<sub>2</sub>S<sub>6</sub>/Metal Heterostructures

Yong Dong,Chao An,Yongyi Wu,Zhen Zhang,Tao Li,Tai Min,Jinbo Yang,Xuegang Chen,Mingliang Tian

DOI: https://doi.org/10.3390/sym15050966

2023-01-01

Symmetry

Abstract:The layered van der Waals CuInP2S6 (CIPS) features interesting functional behaviors, including reversible ferroelectric polarization, Cu ion migration, negative capacitance effect, etc. Here, the CIPS flakes were exfoliated from the CVT-grown high-quality single crystals, which were fabricated into metal/CIPS/metal heterostructures by conventional photolithography. It was found that the CIPS flakes persisted in the dominant out-of-plane polarization and the minor in-plane polarization. Clear hysteresis current–voltage (I–V) loops, as well as the rectifying character, were revealed in metal/CIPS/metal heterostructures, indicating the potential application as a memory device. Additionally, the different metal electrode could significantly modulate the Schottky-like barrier at metal/CIPS interfaces, resulting in symmetric or asymmetric I–V loops. The complicated I–V curves may have originated from the voltage-induced Cu ion migration, reversible ferroelectric polarization, and carrier (ion) trapping/detrapping. This work may facilitate the metal electrode selection for the ferroelectric CIPS-based device application.

Kidney and electrolyte disturbances in neoplastic diseases.

Applying the Wake-Up-like Effect to Enhance the Capabilities of Two-Dimensional Ferroelectric Field-Effect Transistors.

Apocrine hidrocystoma of the shoulder.

Ferroelectricity and Piezoelectricity in 2D Van der Waals CuInP2S6 Ferroelectric Tunnel Junctions

Flexoelectric Engineering of Van Der Waals Ferroelectric CuInP2S6.

2D Ferroionics: Conductive Switching Mechanisms and Transition Boundaries in Van Der Waals Layered Material CuInP2 S6.

Two‐Dimensional Ferroionics: Conductive Switching Mechanisms And Transition Boundaries in Van Der Waals Layered Material CuInP2S6

Switchable Metal-to-half-metal Transition at the Semi-Hydrogenated Graphene/ferroelectric Interface.

Low-Thermal-Budget Ferroelectric Field-Effect Transistors Based on CuInP2S6 and InZnO

Robust Threshold-Switching Behavior Assisted by Cu Migration in a Ferroionic CuInP2S6 Heterostructure

Multistate Ferroelectric Diodes with High Electroresistance Based on van der Waals Heterostructures

Ferroelectric Field‐Effect‐Transistor Integrated with Ferroelectrics Heterostructure

All-2D CVD-grown semiconductor field-effect transistors with van der Waals graphene contacts

Interfacial Electronic Properties and Adjustable Schottky Barrier at Graphene/CsPbI3 Van Der Waals Heterostructures

Theoretical study of metal contacts to the monolayer ferroelectric material CuInP2S6 and its device applications

Comprehensive Study of Electrode Effect in Metal/CuInP2S6/Metal Heterostructures

An all two-dimensional vertical heterostructure graphene/CuInP 2 S 6 /MoS 2 for negative capacitance field effect transistor

Interfacial Polarization Control Engineering and Ferroelectric PZT/Graphene Heterostructure Integrated Application

Ferroelectricity-enhanced potassium-ion storage in van der Waals layered CuInP2S6

Comprehensive Study of Electrode Effect in Metal/CuInP<sub>2</sub>S<sub>6</sub>/Metal Heterostructures