Abstract:The authors report on the fabrication and application of a ferroelectric transistor integrated with a van der Waals ferroelectrics heterostructure (CuInP2S6/α‐In2Se3). Leveraging enhanced polarization originating from the dipole coupling, the fabricated device exhibits a large memory window and nonvolatile memory characteristics with long retention time and stable cyclic endurance, providing a promising pathway for exploring low‐dimensional ferroelectronics. To address the demands of emerging data‐centric computing applications, ferroelectric field‐effect transistors (Fe‐FETs) are considered the forefront of semiconductor electronics owing to their energy and area efficiency and merged logic–memory functionalities. Herein, the fabrication and application of an Fe‐FET, which is integrated with a van der Waals ferroelectrics heterostructure (CuInP2S6/α‐In2Se3), is reported. Leveraging enhanced polarization originating from the dipole coupling of CIPS and α‐In2Se3, the fabricated Fe‐FET exhibits a large memory window of 14.5 V at VGS = ±10 V, reaching a memory window to sweep range of ≈72%. Piezoelectric force microscopy measurements confirm the enhanced polarization‐induced wider hysteresis loop of the double‐stacked ferroelectrics compared to single ferroelectric layers. The Landau–Khalatnikov theory is extended to analyze the ferroelectric characteristics of a ferroelectric heterostructure, providing detailed explanations of the hysteresis behaviors and enhanced memory window formation. The fabricated Fe‐FET shows nonvolatile memory characteristics, with a high on/off current ratio of over 106, long retention time (>104 s), and stable cyclic endurance (>104 cycles). Furthermore, the applicability of the ferroelectrics heterostructure is investigated for artificial synapses and for hardware neural networks through training and inference simulation. These results provide a promising pathway for exploring low‐dimensional ferroelectronics.

Ferroelectric field effect transistors based on two-dimensional CuInP2S6 (CIPS) and graphene heterostructures

Applying the Wake-Up-like Effect to Enhance the Capabilities of Two-Dimensional Ferroelectric Field-Effect Transistors.

An Ultrathin Two-Dimensional Vertical Ferroelectric Tunneling Junction Based On Cuinp(2)S(6)Monolayer

Ferroelectric Single-Crystal Gated Graphene/Hexagonal-BN/Ferroelectric Field-Effect Transistor

Ferroelectricity and Piezoelectricity in 2D Van der Waals CuInP2S6 Ferroelectric Tunnel Junctions

Flexoelectric Engineering of Van Der Waals Ferroelectric CuInP2S6.

Ferroelectric Polarization Effects on the Transport Properties of Graphene/Pmn-Pt Field Effect Transistors

2D Ferroionics: Conductive Switching Mechanisms and Transition Boundaries in Van der Waals Layered Material CuInP<sub>2</sub>S<sub>6</sub>

Two‐Dimensional Ferroionics: Conductive Switching Mechanisms And Transition Boundaries in Van Der Waals Layered Material CuInP2S6

Switchable Metal-to-half-metal Transition at the Semi-Hydrogenated Graphene/ferroelectric Interface.

Low-Thermal-Budget Ferroelectric Field-Effect Transistors Based on CuInP2S6 and InZnO

Robust Threshold-Switching Behavior Assisted by Cu Migration in a Ferroionic CuInP2S6 Heterostructure

Multistate Ferroelectric Diodes with High Electroresistance Based on van der Waals Heterostructures

Ferroelectric Field‐Effect‐Transistor Integrated with Ferroelectrics Heterostructure

All-2D CVD-grown semiconductor field-effect transistors with van der Waals graphene contacts

Theoretical study of metal contacts to the monolayer ferroelectric material CuInP2S6 and its device applications

Room-temperature Ferroelectricity in CuInP2S6 Ultrathin Flakes

An All Two-Dimensional Vertical Heterostructure Graphene/cuinp2s6/mos2 for Negative Capacitance Field Effect Transistor

Comprehensive Study of Electrode Effect in Metal/CuInP2S6/Metal Heterostructures