Abstract:Flexoelectricity is an electromechanical coupling effect between the polarization and strain gradient in all dielectrics regardless of point group symmetry. Due to its significant influence on material behavior at the nanoscale, the flexoelectric effect has attracted more and more attention in recent years. In this paper, a real space phase field model for the flexoelectric effect in ferroelectric materials is developed by using isogeometric analysis (IGA). The IGA employs the same smooth and high-order basis functions to describe both the geometry of material and the solution of phase field, which is able to give an accurate and efficient description of the flexoelectric effect in ferroelectrics with arbitrary geometrical shapes and boundary conditions. To this end, phase field simulations on the effect of flexoelectricity are conducted for nanoscale ferroelectrics with different geometrical shapes and boundary conditions. The simulation results show that the flexoelectric effect has significant influence on the domain structures and domain switching of ferroelectric materials at the nanoscale. For ferroelectric nanobeam under bending load, due to the flexoelectric effect, the mechanical bending can break the symmetry of hysteresis loop between electric field and polarization. As for ferroelectric nanodots, the flexoelectric effect increases the magnitude of spontaneous polarizations and results in the tilting of polarization vortex. In addition, out-of-plane components appear in the polarization vortex of ferroelectric nanodots due to the flexoelectric effect, which increases the coercive field for the switching of polarization vortex and changes the switching process significantly. The present work not only presents an effective nonlocal model for the domain evolution in ferroelectric materials with the consideration of the flexoelectric effect, but also asymmetric hysteresis loop between polarization and external electric field for ferroelectric beam, and new switching behavior of the polarization vortex in ferroelectric nanodots due to the flexoelectric effect.

Flexoelectric Engineering of Van Der Waals Ferroelectric CuInP2S6.

Large-Scale Domain Engineering in Two-Dimensional Ferroelectric CuInP 2 S 6 via Giant Flexoelectric Effect

2D Ferroionics: Conductive Switching Mechanisms and Transition Boundaries in Van Der Waals Layered Material CuInP2 S6.

Anomalous Reverse Mechanical Polarization Switching In Negative Piezoelectric CuInP2S6

Ferroelectricity and Piezoelectricity in 2D Van der Waals CuInP2S6 Ferroelectric Tunnel Junctions

Reversible flexoelectric domain engineering at the nanoscale in van der Waals ferroelectrics

Two‐Dimensional Ferroionics: Conductive Switching Mechanisms And Transition Boundaries in Van Der Waals Layered Material CuInP2S6

Disentangling stress and curvature effects in layered 2D ferroelectric CuInP2S6

An Isogeometric Approach to Flexoelectric Effect in Ferroelectric Materials

Bending-induced isostructural transitions in ultrathin layers of van der Waals ferrielectrics

Ion migration induced bipolar diode effect and ferroelectricity modulation in CuInP2S6

Highly Tunable Lateral Homojunction Formed in Two-Dimensional Layered CuInP2S6 via In- Plane Ionic Migration

Scale-free switching of polarization in the layered ferroelectric material CuInP$_2$S$_6$

Anomalous Elastic Evolution Induced by Copper Hopping in van der Waals Ferroelectric CuInP2S6

Stress and Curvature Effects in Layered 2D Ferroelectric CuInP 2 S 6

Switchable diode effect in 2D van der Waals ferroelectric CuCrP2S6

Comprehensive Study of Electrode Effect in Metal/CuInP2S6/Metal Heterostructures

Unconventional polarization fatigue in van der Waals layered ferroelectric ionic conductor CuInP2S6

Comprehensive Study of Electrode Effect in Metal/CuInP<sub>2</sub>S<sub>6</sub>/Metal Heterostructures

Giant negative electrostriction and dielectric tunability in a van der Waals layered ferroelectric

Flexoelectronics of Centrosymmetric Semiconductors