Abstract:Transition metal dichalcogenides (TMDs) are layered semiconducting van der Waal crystals and promising materials for a wide range of electronic and optoelectronic devices. Realizing practical electrical and optoelectronic device applications requires a connection between a metal junction and a TMD semiconductor. Hence, a complete understanding of electronic band alignments and the potential barrier heights governing the transport through a metal-TMD-metal junction is critical. But, there is a knowledge gap; it is not clear how the energy bands of a TMD align while in contact with a metal as a function of the number of layers. In pursuit of removing this knowledge gap, we have performed conductive atomic force microscopy (CAFM) of few layered (1-5) MoS2 immobilized on ultra-flat conducting Au surfaces (root mean square (RMS) surface roughness <0.2 nm) and indium tin oxide (ITO) substrate (RMS surface roughness <0.7 nm) forming a vertical metal (conductive-AFM tip)-semiconductor-metal device. We have observed that the current increases as the number of layers increases up to 5 layers. By applying Fowler-Nordheim tunneling theory, we have determined the barrier heights for different layers and observed that the barrier height decreases as the number of layers increases. Using density functional theory (DFT) calculation, we successfully demonstrated that the barrier height decreases as the layer number increases. By illuminating the TMDs on a transparent ultra-flat conducting ITO substrate, we observed a reduction in current when compared to the current measured in the dark, hence demonstrating negative photoconductivity. Our study provides a fundamental understanding of the local electronic and optoelectronic behaviors of TMD-metal junction, and may pave an avenue toward developing nanoscale electronic devices with tailored layer-dependent transport properties.

Sub 20 meV Schottky barriers in metal/MoTe2 junctions

Optical spectroscopic detection of Schottky barrier height at a two-dimensional transition-metal dichalcogenide/metal interface

Lowering the Schottky Barrier Height by Quasi-van Der Waals Contacts for High-Performance P-Type MoTe2 Field-Effect Transistors

Photo-physics and electronic structure of lateral graphene/MoS2 and metal/MoS2 junctions

Schottky barrier lowering due to interface states in 2D heterophase devices

Direct observation of contact resistivity for monolayer TMD based junctions via PL spectroscopy

Schottky Barrier Height of Pd/MoS2 Contact by Large Area Photoemission Spectroscopy

Atomistic Observation of the Local Phase Transition in MoTe2 for Application in Homojunction Photodetectors.

A Study of Lateral Schottky Contacts in WSe2 and MoS2 Field Effect Transistors Using Scanning Photocurrent Microscopy.

Canonical Schottky barrier heights of the transition metal dichalcogenide monolayers in contact with a metal

The role of device asymmetries and Schottky barriers on the helicity-dependent photoresponse of 2D phototransistors

Semimetal-Monolayer Transition Metal Dichalcogenides Photodetectors for Wafer-Scale Ultraviolet Photonics

Reduced Schottky Barrier Height at Metal/cvd-Grown MoTe2 Interface

Tunable Schottky contacts in MSe 2 /NbSe 2 (M = Mo and W) heterostructures and promising application potential in field-effect transistors.

Energy-Level Alignment at Interfaces between Transition-Metal Dichalcogenide Monolayers and Metal Electrodes Studied with Kelvin Probe Force Microscopy

Layer Dependent Interfacial Transport and Optoelectrical Properties of MoS2 on Ultra-flat Metals

Mechanism of Low Schottky Barrier Formation for Chromium/ CdZnTe Contact

Reduced Schottky barrier height at metal/CVD-grown MoTe<sub>2</sub> interface

Tuning the p-type Schottky barrier in 2D metal/semiconductor interface: boron-sheet/\mose, and /\wse

Asymmetric photoelectric effect: Auger-assisted hot hole photocurrents in transition metal dichalcogenides

Assessing the role of quantum effects in 2D heterophase MoTe$_2$ field effect transistors