Abstract:The Schottky barrier of a metal-semiconductor junction is one of the key quantities affecting the charge transport in a transistor. The Schottky barrier height depends on several factors, such as work function difference, local atomic configuration in the interface, and impurity doping. We show that also the presence of interface states at 2D metal-semiconductor junctions can give rise to a large renormalization of the effective Schottky barrier determined from the temperature dependence of the current. We investigate the charge transport in n- and p-doped monolayer MoTe$_2$ 1T'-1H junctions using ab-initio quantum transport calculations. The Schottky barriers are extracted both from the projected density of states and the transmission spectrum, and by simulating the IT-characteristic and applying the thermionic emission model. We find interface states originating from the metallic 1T' phase rather than the semiconducting 1H phase in contrast to the phenomenon of Fermi level pinning. Furthermore, we find that these interface states mediate large tunneling currents which dominates the charge transport and can lower the effective barrier to a value of only 55 meV.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is how the metal - semiconductor interface states can significantly reduce the Schottky barrier height in two - dimensional heterophase devices. Specifically, the paper studied the influence of interface states on charge transport in n - type and p - type monolayer MoTe₂ 1T’ - 1H junctions. Through first - principles quantum transport calculations, the authors extracted the height of the Schottky barrier and further analyzed it by simulating the I - V characteristics and applying the thermionic emission model. The study found that the interface states are mainly derived from the metallic phase 1T’, not the semimetallic phase 1H, which is different from the Fermi - level pinning phenomenon. These interface states promote a large tunneling current, thereby significantly reducing the effective barrier height, which can be as low as 55 meV. ### Main research questions 1. **Reduction of Schottky barrier**: Explore how interface states affect the height of the Schottky barrier in two - dimensional heterophase devices, especially in n - type and p - type monolayer MoTe₂ 1T’ - 1H junctions. 2. **Source of interface states**: Determine whether the main source of interface states is the 1T’ phase or the 1H phase, and analyze its impact on the Fermi - level pinning phenomenon. 3. **Charge transport mechanism**: Analyze the main mechanism of charge transport through theoretical calculations and experimental methods, especially the role of the tunneling effect at different temperatures. ### Research methods 1. **Density functional theory (DFT)**: Used to calculate the electronic structure of materials. 2. **Non - equilibrium Green's function (NEGF)**: Used to calculate charge - transport characteristics. 3. **Projected density of states (DOS)**: Extract the Schottky barrier height from the projected density of states. 4. **Transmission spectrum (TS)**: Extract the barrier height from the transmission spectrum. 5. **Thermionic emission model (TE)**: Extract the barrier height from temperature - dependent current data. ### Key findings 1. **Existence of interface states**: Interface states were found in n - type and p - type monolayer MoTe₂ 1T’ - 1H junctions, and these interface states are mainly derived from the 1T’ phase. 2. **Enhancement of tunneling current**: Interface states promote a large tunneling current, thereby significantly reducing the effective barrier height. 3. **Effective barrier height**: In n - type devices, the effective barrier height can be as low as 55 meV, which is consistent with experimental measurement results. 4. **Fermi - level pinning phenomenon**: Interface states do not cause Fermi - level pinning but are relatively independent of the doping level. ### Conclusion Through detailed theoretical calculations and analysis, the paper reveals the significant impact of interface states on the Schottky barrier height in two - dimensional heterophase devices. These findings are of great significance for understanding and developing new transistor technologies based on transition metal dichalcogenides.

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