Abstract:An atomistic insight into potential barrier formation and band bending at the interface between a metal and an n-type semiconductor is achieved by ab initio simulations and model analysis of a prototype Schottky diode, i.e., niobium doped rutile titania in contact with gold (Au/Nb:TiO$_2$). The local Schottky barrier height is found to vary between 0 and 1.26 eV depending on the position of the dopant. The band bending is caused by a dopant induced dipole field between the interface and the dopant site, whereas the pristine Au/TiO$_2$ interface does not show any band bending. These findings open the possibility for atomic scale optimization of the Schottky barrier and light harvesting in metal-semiconductor nanostructures.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to understand the formation mechanism of the Schottky barrier (SB) at the metal - semiconductor interface, especially the inhomogeneity of the barrier height and band bending on the atomic scale. Specifically, the research aims to reveal the formation of the Schottky barrier and its microscopic mechanism when gold (Au) is in contact with niobium - doped titanium dioxide (Nb:TiO₂) through first - principles calculations. ### Main problems 1. **Inhomogeneity of barrier height**: Traditional models assume that the Schottky barrier height (SBH) is uniform on the semiconductor side, but experimental results show that there is significant spatial inhomogeneity in the actual situation. Therefore, it is necessary to explain the origin of this inhomogeneity on the atomic scale. 2. **Mechanism of band bending**: The research explored how doping atoms affect band bending at the metal - semiconductor interface, especially the changes under different doping positions. 3. **Optimizing device performance**: Through in - depth understanding of the formation of the Schottky barrier, it provides theoretical guidance for the design and optimization of nano - devices based on metal - semiconductor structures, such as optoelectronic devices, photoelectrocatalysis and gas sensors. ### Research methods The researchers used density functional theory (DFT) combined with the GGA + U method for calculations, simulated the interface between Au and Nb:TiO₂, and analyzed the influence of different doping positions on the Schottky barrier height and band bending. The main findings include: - **Undoped interface**: The original Au/TiO₂ interface exhibits a large barrier height, but there is no obvious band bending. - **Doping effect**: After introducing niobium doping, the band bending becomes obvious and highly dependent on the position of the doping atom. Doping atoms close to the interface lead to a smaller barrier height and weaker band bending, while doping atoms far from the interface cause stronger band bending. - **Deep - level model**: The research results are in good agreement with the deep - level (DL) model, indicating that the local charge polarization caused by doping is the main reason for band bending. These findings provide a new perspective for understanding the microscopic mechanism of the Schottky barrier and lay the foundation for further optimizing the electron transport characteristics in metal - semiconductor nanostructures.

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