Abstract:Charge density waves (CDWs) in transition metal dichalcogenides are the subject of growing scientific interest due to their rich interplay with exotic phases of matter and their potential technological applications. Here, using density functional theory with advanced meta-generalized gradient approximations (meta-GGAs) and linear response time-dependent density functional theory (TDDFT) with state-of-the-art exchange-correlation kernels, we investigate the electronic, vibrational, and optical properties in 1T-TiSe2 with and without CDW. In both bulk and monolayer TiSe2, the electronic bands and phonon dispersions in either normal (semi-metallic) or CDW (semiconducting) phase are described well via meta-GGAs, which separate the valence and conduction bands just as HSE06 does but with significantly more computational feasibility. Instead of the underestimated gap with standard exchange-correlation approximations and the overestimated gap with screened hybrid functional HSE06, the band gap of the monolayer TiSe2 CDW phase calculated by the meta-GGA MVS (151 meV) is consistent with the angle-resolved photoemission spectroscopy (ARPES) gap of 153 meV measured at 10 K. In addition, the gap of bulk TiSe2 CDW phase reaches 67 meV within the TASK approximation, close to the ARPES gap of 82 meV. Regarding excitations of many-body nature, for bulk TiSe2 in normal and CDW phases, the experimentally observed humps of electron energy loss spectroscopy and plasmon peak are successfully reproduced in TDDFT, without an obvious kernel dependence. To unleash the full scientific and technological potential of CDWs in transition metal dichalcogenides, the chemical doping, heterostructure engineering, and pump-probe techniques are needed. Our study opens the door to simulating these complexities in CDW compounds from first principles by revealing meta-GGAs as an accurate low-cost alternative to HSE06.

Van der Waals Schottky barriers as interface probes of the correlation between chemical potential shifts and charge density wave formation in 1T-TiSe$_2$ and 2H-NbSe$_2$

Modulating Charge Density Wave Order in a 1T-Tas2/black Phosphorus Heterostructure.

Enhancing Charge-Density-Wave Order In 1t-Tise2 Nanosheet By Encapsulation With Hexagonal Boron Nitride

Pressure Effect of the Charge Density Wave Transition on Raman Spectra and Transport Properties of 2H−nbse2

A Pathway to Efficient Simulations of Charge Density Waves in Transition Metal Dichalcogenides: A Case Study for TiSe2

Optical spectroscopic detection of Schottky barrier height at a two-dimensional transition-metal dichalcogenide/metal interface

Robust charge-density wave strengthened by electron correlations in monolayer 1T-TaSe2 and 1T-NbSe2

Nonreciprocal charge-density-wave proximity effect in a lateral heterojunction of NbSe2/TiSe2

Charge Density Wave and Electron-Phonon Interaction in Epitaxial Monolayer NbSe2 Films

Charge density wave phase suppression in 1T-TiSe2 through Sn intercalation

Gate Tuning of Electronic Phase Transitions in Two-DimensionalNbSe2

Depinning of charge density waves of different dimensionalities in 1 T-TiSe2and NbSe3

Robust Coulomb Gap and Varied-temperature Study of Epitaxial 1T'-WSe$_2$ Monolayers

Electric Field Effect on the Charge Density Wave in the Quasi-One-dimensional Semimetal Ta2NiSe7

Surface Charge Induced Dirac Band Splitting in a Charge Density Wave Material (Tase4)2i

Tunable Schottky contacts in MSe 2 /NbSe 2 (M = Mo and W) heterostructures and promising application potential in field-effect transistors.

Microscopic evidence for strong periodic lattice distortion in 2D charge-density wave systems

Lattice Discontinuities of 1T-TaS2 across First Order Charge Density Wave Phase Transitions

Identification of soft modes across the commensurate-to-incommensurate charge density wave transition in 1$T$-TaSe$_2$

Robust Coulomb Gap and Varied-temperature Study of Epitaxial 1T'-Wse_2 Monolayers

Probing charge order of monolayer NbSe$_2$ within a bulk crystal