Abstract:Low-dimension materials such as transition metal dichalcogenides (TMDCs) have received extensive research interest and investigation for electronic and optoelectronic applications. Due to their unique widely tunable band structures, they are good candidates for next-generation optoelectronic devices. Particularly, their photoluminescence properties, which are fundamental for optoelectronic applications, are highly sensitive to the nature of the band gap. Monolayer TMDCs in the room temperature range have presented a direct band gap behavior and bright photoluminescence. In this work, we investigate a popular TMDC material WSe2's photoluminescence performance using a Raman spectroscopy laser with temperature dependence. With temperature variation, the lattice constant and the band gap change dramatically, and thus the photoluminescence spectra are changed. By checking the photoluminescence spectra at different temperatures, we are able to reveal the nature of direct-to-indirect band gap in monolayer WSe2. We also implemented density function theory (DFT) simulations to computationally investigate the band gap of WSe2 to provide comprehensive evidence and confirm the experimental results. Our study suggests that monolayer WSe2 is at the transition boundary between the indirect and direct band gap at room temperature. This result provides insights into temperature-dependent optical transition in monolayer WSe2 for quantum control, and is important for cultivating the potential of monolayer WSe2 in thermally tunable optoelectronic devices operating at room temperature.

Robust Coulomb Gap and Varied-temperature Study of Epitaxial 1T'-Wse_2 Monolayers

Robust Coulomb Gap and Varied-temperature Study of Epitaxial 1T'-WSe$_2$ Monolayers

Wafer‐scale Single‐crystalline MoSe2 and WSe2 Monolayers Grown by Molecular‐beam Epitaxy at Low‐temperature — the Role of Island‐substrate Interaction and Surface Steps

Growth and Thermo-driven Crystalline Phase Transition of Metastable Monolayer 1T′-Wse 2 Thin Film

Fabrication and Optical Performance of Mo1-xWxS2 Monolayer with Different Composition Ranges Via One-Step Chemical Vapor Deposition Approach

Epitaxial Growth of Single‐Phase 1T'‐WSe 2 Monolayer with Assistance of Enhanced Interface Interaction

Epitaxial Growth of Single‐Phase 1t'‐wse2 Monolayer with Assistance of Enhanced Interface Interaction

Observation of an abnormally large bandgap in monolayer 1T′-WS2 grown on SrTiO3(001)

Large quantum-spin-Hall gap in single-layer 1T′ WSe2

Temperature effects in topological insulators of transition metal dichalcogenide monolayers

Correlatively Dependent Lattice and Electronic Structural Evolutions in Compressed Monolayer Tungsten Disulfide

Molecular-beam Epitaxy of Monolayer and Bilayer WSe 2 : a Scanning Tunneling Microscopy/spectroscopy Study and Deduction of Exciton Binding Energy

Chemical Vapor Deposition Growth of Monolayer WSe2 with Tunable Device Characteristics and Growth Mechanism Study

Experimental and Theoretical Investigations of Direct and Indirect Band Gaps of WSe2

Electronic Structure, Surface Doping, and Optical Response in Epitaxial WSe2 Thin Films

Quantum-spin-Hall insulator with a large gap: single-layer 1T' WSe$_2$

Robust charge-density wave strengthened by electron correlations in monolayer 1T-TaSe2 and 1T-NbSe2

Lateral Epitaxy of Atomically Sharp WSe2/WS2 Heterojunctions on Silicon Dioxide Substrates

High‐temperature Electrical and Thermal Transport Behaviors in Layered Structure WSe2

Electronic Structure of Exfoliated Millimeter-Sized Monolayer WSe2 on Silicon Wafer

First Principles Kinetic Monte Carlo Study on the Growth Patterns of WSe 2 Monolayer