Large quantum-spin-Hall gap in single-layer 1T′ WSe2

P. Chen,Woei Wu Pai,Y.-H. Chan,W.-L. Sun,C.-Z. Xu,D.-S. Lin,M. Y. Chou,A.-V. Fedorov,T.-C. Chiang
DOI: https://doi.org/10.1038/s41467-018-04395-2
IF: 16.6
2018-05-21
Nature Communications
Abstract:Two-dimensional (2D) topological insulators (TIs) are promising platforms for low-dissipation spintronic devices based on the quantum-spin-Hall (QSH) effect, but experimental realization of such systems with a large band gap suitable for room-temperature applications has proven difficult. Here, we report the successful growth on bilayer graphene of a quasi-freestanding WSe2 single layer with the 1T′ structure that does not exist in the bulk form of WSe2. Using angle-resolved photoemission spectroscopy (ARPES) and scanning tunneling microscopy/spectroscopy (STM/STS), we observe a gap of 129 meV in the 1T′ layer and an in-gap edge state located near the layer boundary. The system′s 2D TI characters are confirmed by first-principles calculations. The observed gap diminishes with doping by Rb adsorption, ultimately leading to an insulator–semimetal transition. The discovery of this large-gap 2D TI with a tunable band gap opens up opportunities for developing advanced nanoscale systems and quantum devices.
multidisciplinary sciences
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