Abstract:Spin-gapless semiconductors (SGSs), serving as superior alternatives to half-metals, open up new avenues in spintronics. Specifically, Weyl-point SGSs (WPSGSs) with ideal Weyl points at the Fermi energy level represent an optimal amalgamation of spintronics and topological physics. Moreover, considering spin–orbital coupling (SOC), most two-dimensional (2D) WPSGSs undergo transformation into half Chern insulators (HCIs) with the emergence of the quantum anomalous Hall effect (QAHE). The 2D I–II–V half-Heusler compounds, constituting a broad family of narrow-bandgap semiconductors with low-buckled hexagonal honeycomb crystal structures akin to silicene, aptly function as SGSs and serve as nontrivial topological parent materials. Through first-principles calculations, we propose that the Li 12 X 10 Cr 2 Y 12 (X = Mg, Zn, Cd; Y = P, As) monolayers, derived by substituting certain X atoms in the LiXY (X = Mg, Zn, Cd; Y = P, As) monolayers of I–II–V half-Heusler compounds with Cr atoms, emerge as potential candidates for ideal 2D WPSGSs. These monolayers exhibit stable thermodynamic properties and 100% spin polarization. With SOC taken into account, the Li 12 X 10 Cr 2 Y 12 monolayers transition into HCIs with a Chern number of +1, giving rise to the QAHE. These intriguing findings lay the groundwork for a promising material platform for the development of low-power spintronic and topological microelectronic devices.

A New Type of Large‐Gap Quantum Spin Hall Insulator Material ZrSe5

Realization of monolayer ZrTe5 topological insulators with wide band gaps

Large quantum-spin-Hall gap in single-layer 1T′ WSe2

Robust large-gap topological insulator phase in transition-metal chalcogenide ZrTe<sub>4</sub>Se

Quantum-spin-Hall insulator with a large gap: single-layer 1T' WSe$_2$

Quantum Spin Hall State in Monolayer 1T'-Wte 2

Quantum Spin Hall Effect in Two-Dimensional Transition-Metal Chalcogenides MX5 (M = Zr, Hf and X = S, Se, Te)

A 2D low-buckled hexagonal honeycomb Weyl-point spin-gapless semiconductor family with the quantum anomalous Hall effect

Quantum Oscillations from Nontrivial States in Quasi-Two-Dimensional Dirac Semimetal ZrTe 5 Nanowires

Quantum Spin Hall Effect and Topological Phase Transition in Two-Dimensional Square Transition Metal Dichalcogenides

Room Temperature Quantum Spin Hall Insulator in Ethynyl-Derivative Functionalized Stanene Films

Epitaxial growth of large-gap quantum spin Hall insulator on semiconductor surface

On the quantum spin Hall gap of monolayer 1T'-WTe2

Large-Gap Quantum Spin Hall Insulators in Two-Dimensional Hafnium Halides: Unraveling the Impact of Strain and Substrate

Observation of Topologically Protected States at Crystalline Phase Boundaries in Single-Layer WSe2

Realization of Quantum Spin Hall State in Monolayer 1T'-WTe2

Quantum oscillations and three-dimensional quantum Hall effect in ZrTe$_5$

Shubnikov–de Haas Oscillations in Bulk ZrTe5 Single Crystals: Evidence for a Weak Topological Insulator

From Node-Line Semimetals to Large Gap QSH States in New Family of Pentagonal Group-IVA Chalcogenide

Magnetic Exchange Mechanism and Quantized Anomalous Hall Effect in Bi2Se3 Film with a CrWI6 Monolayer

Crystal Field Effect Induced Topological Crystalline Insulators In Monolayer IV-VI Semiconductors