Robust large-gap topological insulator phase in transition-metal chalcogenide ZrTe<sub>4</sub>Se

Xing Wang,Wenhui Wan,Yanfeng Ge,Yong Liu
DOI: https://doi.org/10.1088/1367-2630/ac2712
2021-01-01
New Journal of Physics
Abstract:Based on density functional theory, we investigate the electronic properties of bulk and single-layer ZrTe4Se. The band structure of bulk ZrTe4Se can produce a semimetal-to-topological insulator (TI) phase transition under uniaxial strain. The maximum global band gap is 0.189 eV at the 7% tensile strain. Meanwhile, the Z (2) invariants (0; 110) demonstrate conclusively it is a weak topological insulator. The two Dirac cones for the (001) surface further confirm the nontrivial topological nature. The single-layer ZrTe4Se is a quantum spin Hall insulator with a band gap 86.4 meV and Z (2) = 1, the nontrivial metallic edge states further confirm the nontrivial topological nature. The maximum global band gap is 0.211 eV at 8% uniaxial tensile strain along the [100] direction. When the compressive strain is more than 1%, the band structure of single-layer ZrTe4Se produces a TI-to-semimetal transition. These theoretical analysis may provide a method for searching large band gap TIs and platform for topological nanoelectronic device applications.
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