Transition Between Strong and Weak Topological Insulator in ZrTe5 and HfTe5

Zongjian Fan,Qi-Feng Liang,Y. B. Chen,Shu-Hua Yao,Jian Zhou
DOI: https://doi.org/10.1038/srep45667
IF: 4.6
2017-01-01
Scientific Reports
Abstract:ZrTe5 and HfTe5 have attracted increasingly attention recently since the theoretical prediction of being topological insulators (TIs). However, subsequent works show many contradictions about their topolog-ical nature. Three possible phases, i.e. strong TI, weak TI, and Dirac semi-metal, have been observed in different experiments until now. Essentially whether ZrTe5 or HfTe5 has a band gap or not is still a question. Here, we present detailed first-principles calculations on the electronic and topological prop-erties of ZrTe5 and HfTe5 on variant volumes and clearly demonstrate the topological phase transition from a strong TI, going through an intermediate Dirac semi-metal state, then to a weak TI when the crystal expands. Our work might give a unified explain about the divergent experimental results and propose the crucial clue to further experiments to elucidate the topological nature of these materials.
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