Abstract:Controlling materials to create and tune topological phases of matter could potentially be used to explore new phases of topological quantum matter and to create novel devices where the carriers are topologically protected. It has been demonstrated that a trivial insulator can be converted into a topological state by modulating the spin-orbit interaction or the crystal lattice. However, there are limited methods to controllably and efficiently tune the crystal lattice and at the same time perform electronic measurements at cryogenic temperatures. Here, we use large controllable strain to demonstrate the topological phase transition from a weak topological insulator phase to a strong topological insulator phase in high-quality HfTe5 samples. After applying high strain to HfTe5 and converting it into a strong topological insulator, we found that the sample's resistivity increased by more than two orders of magnitude (24,000%) and that the electronic transport is dominated by the topological surface states at cryogenic temperatures. Our findings show that HfTe5 is an ideal material for engineering topological properties, and it could be generalized to study topological phase transitions in van der Waals materials and heterostructures. These results can pave the way to create novel devices with applications ranging from spintronics to fault-tolerant topologically protected quantum computers.

What problem does this paper attempt to address?

The main problem that this paper attempts to solve is to explore how to achieve topological phase transition (TPT) by applying controllable strain and to study the influence of this phase transition on electron transport properties. Specifically, the authors focus on transforming the weak topological insulator (WTI) into the strong topological insulator (STI) in high - quality HfTe₅ samples by applying strain and verifying the significant changes that occur during this transformation process. ### Specific description of the main problem: 1. **Achievement of topological phase transition**: - Researchers hope to find an effective method to modulate the lattice structure of materials to achieve the phase transition from WTI to STI. They choose to apply strain as a regulatory means because, compared with other methods such as element doping, strain can change the lattice constant more cleanly and effectively, and electron transport measurements can be carried out at low temperatures. 2. **Influence of strain on electronic structure and transport properties**: - The authors hope to observe whether the electronic structure and transport properties of HfTe₅ samples will change significantly by applying strain. In particular, they are concerned about whether the resistivity of the sample will increase substantially under the action of strain and whether electron transport will be dominated by topological surface states (TSS). 3. **Verification of the existence of TSS**: - During the strain - driven topological phase transition process, researchers expect to be able to observe the appearance of TSS and its contribution to electron transport. This includes the saturation phenomenon of resistivity at low temperatures and the change in the SdH oscillation frequency in magnetic transport measurements. ### Core findings of the paper: - **Experimental results**: - By applying a strain of about 4.5%, the resistivity of the HfTe₅ sample increased by more than two orders of magnitude (24,000%), and electron transport was dominated by TSS at low temperatures. - **Support from theoretical calculations**: - First - principles calculations show that applying strain can significantly change the band - gap size of HfTe₅, thereby achieving the phase transition from WTI to STI. - **Potential applications**: - These findings not only help to understand the physical mechanism of topological phase transition but also provide the possibility for developing new devices based on topological insulators, such as spintronics and fault - tolerant topologically protected quantum computers. In summary, this paper successfully demonstrates the strain - driven topological phase transition and verifies its significant influence on the electron transport properties of HfTe₅ through a combination of experiment and theory.

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