Experimental Observation of Topological Edge States at the Surface Step Edge of the Topological Insulator ZrTe_{5}.

Xiang-Bing Li,Wen-Kai Huang,Yang-Yang Lv,Kai-Wen Zhang,Chao-Long Yang,Bin-Bin Zhang,Y. B. Chen,Shu-Hua Yao,Jian Zhou,Ming-Hui Lu,Li Sheng,Shao-Chun Li,Jin-Feng Jia,Qi-Kun Xue,Yan-Feng Chen,Ding-Yu Xing
DOI: https://doi.org/10.1103/physrevlett.116.176803
IF: 8.6
2016-01-01
Physical Review Letters
Abstract:We report an atomic-scale characterization of ZrTe_{5} by using scanning tunneling microscopy. We observe a bulk band gap of ∼80  meV with topological edge states at the step edge and, thus, demonstrate that ZrTe_{5} is a two-dimensional topological insulator. We also find that an applied magnetic field induces an energetic splitting of the topological edge states, which can be attributed to a strong link between the topological edge states and bulk topology. The relatively large band gap makes ZrTe_{5} a potential candidate for future fundamental studies and device applications.
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