Three-Dimensional Nature of the Band Structure of Zrte5 Measured by High-Momentum-Resolution Photoemission Spectroscopy

H. Xiong,J. A. Sobota,S. -L. Yang,H. Soifer,A. Gauthier,M. -H. Lu,Y. -Y. Lv,S. -H. Yao,D. Lu,M. Hashimoto,P. S. Kirchmann,Y. -F. Chen,Z. -X. Shen
DOI: https://doi.org/10.1103/physrevb.95.195119
2017-01-01
Abstract:We have performed a systematic high-momentum-resolution photoemission study on ZrTe$_5$ using $6$ eV photon energy. We have measured the band structure near the $\Gamma$ point, and quantified the gap between the conduction and valence band as $18 \leq \Delta \leq 29$ meV. We have also observed photon-energy-dependent behavior attributed to final-state effects and the 3D nature of the material's band structure. Our interpretation indicates the gap is intrinsic and reconciles discrepancies on the existence of a topological surface state reported by different studies. The existence of a gap suggests that ZrTe$_5$ is not a 3D strong topological insulator nor a 3D Dirac semimetal. Therefore, our experiment is consistent with ZrTe$_5$ being a 3D weak topological insulator.
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