Abstract:Topological insulators (TIs) are bulk insulators with unusual gapless metallic surface states protected by time reversal symmetry. The topological surface states are expected to yield unique phenomena, such as spin-momentum locking and the suppression of non-magnetic backscattering. The surface states with a Dirac cone like dispersion relation have been observed directly using Angle-resolved photoemission spectroscopy (ARPES). Their signatures in electrical transport properties have also been reported although the transport behaviors are complicated by the fact that the samples often have dominating conduction from bulk channels due to high carriers density from impurity states. It is theoretically predicted that the surface states are robust against strong disorders, but it has not been tested experimentally. Bi2Te3, a member of the Bi2Se3 family, has been demonstrated to be a promising candidate of 3D topological insulators. In this work, various transport studies have been carried out on Bi2Te3 nanotubes with strong disorders. As essentially narrow gap semiconductors with band gaps of 100 to 300 meV, the Bi2Se3 family often have conducting bulk due to impurity doping and lattice imperfection, such as vacancies, dislocations, and defects. Several approaches have been applied to reduce bulk conductivity. The first one is to compensate bulk carriers by chemical doping or field effect, which drags Fermi level back to bang gap. Another is to fabricate nano-scale samples with enhanced surface-to-volume ratio, and effectively reduce the weight of bulk conduction. In our work we have prepared Bi2Te3 nanotubes by solution phase method utilizing Kirkendall effect. Due to the nature of this process, polycrystalline Bi2Te3 nanotubes form with extremely strong disorders. In this way, bulk carriers are strongly localized and the samples are brought from a heavily doped band semiconductor to the regime of Anderson insulator. We have demonstrated that the bulk conductance of the nanotubes is truly insulating and characterized by Mott Variable Range Hopping (VRH) mechanism. Despite the strongly disordered bulk channel, Aharonov-Bohm (AB) like oscillations in magnetoconductance have been observed on the nanotubes at low temperatures. The conductance oscillations differ from those on either ballistic or diffusive normal metals. With the combination of theoretical analysis and simulations, we show that these oscillations originate from the outer surface states of the nanotubes. Their behaviors are consistent with the prediction of the “anomalous AB effect” of topological surface states. In comparison with published work on clean TIs, we provide a direct demonstration of the fundamental aspect of topological surface states, namely their robustness to time-reversal invariant disorder. The interplay between a TI and a superconductor (SC) is another interesting topic to explore the exotic behaviors of topological surface states. For example, proximity induced superconductivity on topological insulators leads to the new phase of…

Experimental Demonstration of Topological Surface States Protected by Time-Reversal Symmetry.

Coexistence of the topological state and a two-dimensional electron gas on the surface of Bi 2 Se 3

Artificial Topological Superconductor by the Proximity Effect

Direct Observation of the Topological Surface State in the Topological Superconductor 2M-WS2

Photoemission Circular Dichroism and Spin Polarization of the Topological Surface States in UltrathinBi2Te3Films

Symmetry-Constrained Reorganization Of Dirac Cones In Topological Insulators By Surface Modification

Quasiparticle scattering from topological crystalline insulator SnTe (001) surface states

Scanning tunneling microscopy study of the possible topological surface states in BiTeCl

Weak Anti-localization and Quantum Oscillations of Surface States in Topological Insulator Bi2Se2Te

Topological Surface States Protected From Backscattering by Chiral Spin Texture

Intrinsic conduction through topological surface states of insulating Bi2Te3 epitaxial thin films

Experimental Observation of Topological Edge States at the Surface Step Edge of the Topological Insulator ZrTe_{5}.

Direct observation of quantum confinement of massless Dirac fermions in a topological insulator

Experimental Observation of Dual Magnetic States in Topological Insulators

Direct observation of topological surface states in the layered kagome lattice with broken time-reversal symmetry

Zeeman Effect of the Topological Surface States Revealed by Quantum Oscillations Up to 91 Tesla

Fully Gapped Topological Surface States in Bi2Se3 Films Induced by a D-Wave High-Temperature Superconductor

Electronic structures of topological insulator Bi2Te3 surfaces with non-conventional terminations

Electrical Transport Studies Of Topological Insulator Bi2te3 Nanotubes

Distinct Topological Surface States on the Two Terminations of MnBi$_4$Te$_7$

Probing Dirac Fermion Dynamics in Topological Insulator Bi2Se3 Films with a Scanning Tunneling Microscope.