Abstract:Low-dimension materials such as transition metal dichalcogenides (TMDCs) have received extensive research interest and investigation for electronic and optoelectronic applications. Due to their unique widely tunable band structures, they are good candidates for next-generation optoelectronic devices. Particularly, their photoluminescence properties, which are fundamental for optoelectronic applications, are highly sensitive to the nature of the band gap. Monolayer TMDCs in the room temperature range have presented a direct band gap behavior and bright photoluminescence. In this work, we investigate a popular TMDC material WSe2's photoluminescence performance using a Raman spectroscopy laser with temperature dependence. With temperature variation, the lattice constant and the band gap change dramatically, and thus the photoluminescence spectra are changed. By checking the photoluminescence spectra at different temperatures, we are able to reveal the nature of direct-to-indirect band gap in monolayer WSe2. We also implemented density function theory (DFT) simulations to computationally investigate the band gap of WSe2 to provide comprehensive evidence and confirm the experimental results. Our study suggests that monolayer WSe2 is at the transition boundary between the indirect and direct band gap at room temperature. This result provides insights into temperature-dependent optical transition in monolayer WSe2 for quantum control, and is important for cultivating the potential of monolayer WSe2 in thermally tunable optoelectronic devices operating at room temperature.

What problem does this paper attempt to address?

The paper primarily explores the photoluminescence (PL) performance and bandgap properties of monolayer tungsten diselenide (WSe₂) at different temperatures. Specifically, the research team studied the direct and indirect bandgap behavior of monolayer WSe₂ in the temperature range of 140 K to 600 K through a combination of experimental and theoretical calculations. ### Research Background - Two-dimensional (2D) transition metal dichalcogenides (TMDCs) have garnered widespread attention due to their unique physical properties, especially their potential applications in electronics and optoelectronics. - WSe₂, as a novel TMDC material, exhibits excellent properties such as high quasi-ballistic transport and is known to have a direct bandgap in its monolayer form, showing strong photoluminescence effects. - However, there is limited research on the temperature-dependent bandgap properties of WSe₂, particularly systematic studies on the temperature dependence of the bandgap behavior of monolayer WSe₂. ### Main Findings - Through temperature-dependent photoluminescence tests on monolayer WSe₂, it was found that at low temperatures (e.g., 140 K), WSe₂ exhibits strong photoluminescence effects corresponding to higher photon energy. As the temperature increases to around room temperature (approximately 273 K), the photoluminescence intensity reaches its peak and then begins to decline. - At room temperature, monolayer WSe₂ is at the critical point of transitioning from an indirect bandgap to a direct bandgap. - Using Density Functional Theory (DFT) simulations, the experimental results were further validated, confirming that the bandgap properties of monolayer WSe₂ change with temperature, particularly showing a transition from an indirect bandgap to a direct bandgap near room temperature. ### Conclusion This paper not only reveals the sensitivity of the bandgap properties of monolayer WSe₂ to temperature but also provides the possibility of temperature-tuning the bandgap of monolayer WSe₂, which is significant for developing new optoelectronic devices based on WSe₂. Additionally, this work offers theoretical guidance and technical foundation for understanding and designing the next generation of optoelectronic devices based on TMDC materials.

Experimental and Theoretical Investigations of Direct and Indirect Band Gaps of WSe2

Two-Dimensional Molybdenum Tungsten Diselenide Alloys: Photoluminescence, Raman Scattering, and Electrical Transport

Electronic Structure Evolution and Exciton Energy Shifting Dynamics in WSe2: from Monolayer to Bulk

Probing Momentum-Indirect Excitons by Near-Resonance Photoluminescence Excitation Spectroscopy in WS2 Monolayer

Direct observation of the transition from indirect to direct bandgap in atomically thin epitaxial MoSe2

Charge-Transfer-Induced Photoluminescence Properties of WSe2 Monolayer-Bilayer Homojunction.

Pressure-Induced Photoluminescence Adjustment and Lattice Disorder in Monolayer Wse2

Probing Excitonic Dark States in Single-layer Tungsten Disulfide

Temperature-Dependent Phonon Scattering and Photoluminescence in Vertical MoS2/WSe2 Heterostructures

Influence of Lattice Vibrations on Luminescence and Transfer of Excitons in WS2monolayer Semiconductors

Robust Coulomb Gap and Varied-temperature Study of Epitaxial 1T'-WSe$_2$ Monolayers

Molecular-beam Epitaxy of Monolayer and Bilayer WSe 2 : a Scanning Tunneling Microscopy/spectroscopy Study and Deduction of Exciton Binding Energy

Optical Band Engineering of Monolayer WSe2 in a Scanning Tunneling Microscope

Van der Waals epitaxy of CsPbBr 3 /WSe 2 heterostructure and dynamics study of exciton recombination

Robust Coulomb Gap and Varied-temperature Study of Epitaxial 1T'-Wse_2 Monolayers

Evolution of Electronic Structure in Atomically Thin Sheets of WS2 and WSe2

Measurement of high exciton binding energy in the monolayer transition-metal dichalcogenides WS2 and WSe2

Temperature Dependence of the Indirect Gap and the Direct Optical Transitions at the High-Symmetry Point of the Brillouin Zone and Band Nesting in MoS2, MoSe2, MoTe2, WS2, and WSe2 Crystals

Observation of in-plane exciton-polaritons in monolayer WSe<sub>2</sub> driven by plasmonic nanofingers

Temperature-dependent photoluminescence emission and Raman scattering from Mo1-x W x S2 monolayers.

Broadband light absorption and photoresponse enhancement in monolayer WSe2 crystal coupled to Sb2O3 microresonators