Probing Momentum-Indirect Excitons by Near-Resonance Photoluminescence Excitation Spectroscopy in WS2 Monolayer

Di Bao,Andres Granados del aguila,T. Thu Ha Do,Sheng Liu,Jiajie Pei,Qihua Xiong
DOI: https://doi.org/10.1088/2053-1583/ab817a
IF: 6.861
2020-01-01
2D Materials
Abstract:Coulomb-bound electron-hole pairs (excitons) dominate the optical response of atomically-thin transition metal dichalcogenides (TMDs) semiconductors. The photoluminescence spectrum in W-based TMDs monolayers (i.e. WS2 and WSe2) at low temperature exhibits much richer features than Mo-based TMDs monolayers, whose origin is currently not well understood. Herein, by using near-resonant photoluminescence excitation spectroscopy, we probe the scattering events between excitons and phonons with large kˆ-momentum, which provides strong evidence for the momentum-indirect nature of the optical bandgap in monolayer WS2. The scattering between carriers and zone-edge phonons creates excitons at different valleys, among which, the lowest-energy is momentum-indirect. Our findings highlight that more efforts are required to solve the current debate on the inherent bandgap nature of TMD monolayers and the complex photoluminescence spectrum reported on W-based compounds.
What problem does this paper attempt to address?