Abstract:Stacking atomically thin films enables artificial construction of van der Waals heterostructures with exotic functionalities such as superconductivity, the quantum Hall effect, and engineered light-matter interactions. In particular, heterobilayers composed of monolayer transition metal dichalcogenides have attracted significant interest due to their controllable interlayer coupling and trapped valley excitons in moire superlattices. However, the identification of twist-angle-modulated optical transitions in heterobilayers is sometimes controversial since both momentum-direct (K-K) and -indirect excitons reside on the low energy side of the bright exciton in the monolayer constituents. Here, we attribute the optical transition at similar to 1.35 eV in the WS2/WSe2 heterobilayer to an indirect Gamma-K transition based on a systematic analysis and comparison of experimental photoluminescence spectra with theoretical calculations. The exciton wavefunction obtained by the state-of-the-art GW-Bethe-Salpeter equation approach indicates that both the electron and hole of the excitons are contributed by the WS2 layer. Polarization-resolved k-space imaging further confirms that the transition dipole moment of this optical transition is dominantly in-plane and is independent of the twist angle. The calculated absorption spectrum predicts that the so-called interlayer exciton peak coming from the K-K transition is located at 1.06 eV, but with a much weaker amplitude. Our work provides new insight into the steady-state and dynamic properties of twist-angle-dependent excitons in van der Waals heterostructures. The twist-angle-modulated excitons in vertically stacked WS2/WSe2 heterobilayers are proven to be an indirect G-K intralayer transition, with a nearly in-plane transition dipole moment.

Influence of Lattice Vibrations on Luminescence and Transfer of Excitons in WS2monolayer Semiconductors

Revealing the Competition Between Defect‐Trapped Exciton and Band‐Edge Exciton Photoluminescence in Monolayer Hexagonal WS2

Electrical Control of Excitonic Oscillator Strength and Spatial Distribution in a Monolayer Semiconductor

Revealing the Competition between Defect‐Trapped Exciton and Band‐Edge Exciton Photoluminescence in Monolayer Hexagonal WS 2

Observation of excitonic fine structure in a 2D transition-metal dichalcogenide semiconductor.

Probing Momentum-Indirect Excitons by Near-Resonance Photoluminescence Excitation Spectroscopy in WS2 Monolayer

Controlling relaxation dynamics of excitonic states in monolayer transition metal dichalcogenides WS2 through interface engineering

Pressure-Induced Photoluminescence Adjustment and Lattice Disorder in Monolayer Wse2

Identification of twist-angle-dependent excitons in WS<sub>2</sub>/WSe<sub>2</sub> heterobilayers

Controlling relaxation dynamics of excitonic states in monolayer transition metal dichalcogenides WS 2 through interface engineering

Reduced Binding Energy and Layer-Dependent Exciton Dynamics in Monolayer and Multilayer WS2.

Exploration Of Exciton Behavior In Atomically Thin Ws2 Layers By Ionic Gating

Photoluminescence Lightening: Extraordinary Oxygen Modulated Dynamics in WS 2 Monolayers

Emerging photoluminescence from the dark-exciton phonon replica in monolayer WSe2

Photoluminescence Enhancement and Carrier Dynamics of Charged Biexciton in Monolayer WS2 Coupled with Plasmonic Nanocavity

Optical Emission from Light-like and Particle-like Excitons in Monolayer Transition Metal Dichalcogenides

Experimental and Theoretical Investigations of Direct and Indirect Band Gaps of WSe2

Exciton, trion and localized exciton in monolayer Tungsten Disulfide

Enhanced interactions of excitonic complexes in free-standing WS2

Twisted-Angle-Dependent Optical Behaviors of Intralayer Excitons and Trions in WS2/WSe2 Heterostructure

Observation of in-plane exciton-polaritons in monolayer WSe<sub>2</sub> driven by plasmonic nanofingers